The switching behaviour of thin films of chalcogenide glass

Thomas, C. B.; Fray, A.F.; Bosnell, J.R.

doi:10.1080/14786437208230109

Cited by 53 publications

(11 citation statements)

References 13 publications

(5 reference statements)

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“…These properties are influenced by the structural changes and could be related to thermally induced transitions [4,5]. Memory switches come from the boundaries of the glass-forming regions, where glasses have a tendency to crystallize when heated or cooled slowly [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Thermal stability of Ge–As–Te–In glasses

Aly

Dahshan

Abdel-Rahim

2009

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Thermal stability of Ge–As–Te–In glasses

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Dahshan

Abdel-Rahim

2009

Journal of Alloys and Compounds

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“…Plots of n 2 versus 2 , as shown in Figure 5, are linear, verifying Equation (8). The values of " L and N/m* were deduced from the extrapolation of these plots to 2 ¼ 0 and from the slope of the graph, respectively (see Table 3).…”

Section: Philosophical Magazine 1069mentioning

confidence: 99%

“…Telluride glasses have been widely investigated for their application as switching and memory devices. The switching behavior arises from a glass-to-crystal transition during the application of current or on heating [7][8][9]. Because of this interest, a number of papers reporting the electrical properties, photoconductivity, glass formation, structure and crystallization kinetics of Ge-As-Te glasses have appeared in the literature [10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Optical constants of quaternary Ge–As–Te–In amorphous thin films evaluated from their reflectance spectra

Aly

2009

Philosophical Magazine

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Thin films of amorphous Ge 9 As 20 Te 71Àx In x with different compositions (x ¼ 0, 3, 6 and 9 at. %) were obtained by deposition onto glass substrates by thermal evaporation. The reflection spectra, R(), of the films were obtained in the spectral region from 400 to 2500 nm. A straightforward analysis proposed by Ruiz-Perez et al., based on the use of the maxima and minima of the interference fringes, has been applied to derive the real and imaginary parts of the complex index of refraction, the thickness and the thickness variation of the studied films. Increasing In content is found to affect the refractive index and the extinction coefficient of the films. Optical absorption measurements were used to obtain the fundamental absorption edge as a function of composition. With increasing In content, the refractive index decreases, whereas the optical band gap, E g , increases.The relationship between E g and the chemical composition of the Ge 9 As 20 Te 71Àx In x system is discussed in terms of the cohesive energy, the average heat of atomization, H s , and the average coordination number, N r .

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“…The authors [61] analyzed the resistance recovery curve of the sample after voltage removal [62] and assumed that the film resistance is dependent on temperature according to the activation law R = R 0 exp(ΔE/kT). Using the data of Fig.…”

Section: Switching Effectmentioning

confidence: 99%