The surface topography of GaN grown on Si (111) substrate before and after wet chemical etching

Zhao, Liwei; Liu, Caichi; Teng, Xinying; Sun, Sheng; Zhang, Wei; Jun-shan, Zhu; Feng, Yan; Guo, Baoping

doi:10.1016/j.mssp.2006.01.024

Cited by 7 publications

(2 citation statements)

References 9 publications

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“…At this initial stage of etching process, the defective region at grain boundaries, which contains weak atomic bonds, will be readily etched by the KOH solution. 18,19 For 30 minutes etched sample (Fig. 2c), the pore density increases as more small pores are observed and distributed across the sample.…”

Section: Resultsmentioning

confidence: 98%

Characteristics of porous GaN prepared by KOH photoelectrochemical etching

Radzali

Zainal

Yam

et al. 2014

Materials Research Innovations

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This paper presents the structural and optical studies of porous GaN prepared by photoelectrochemical etching in diluted KOH under different etching durations. Such etching technique is a cheaper and simpler way of fabricating porous structure. The as-grown and porous GaN samples were investigated by field emission scanning electron microscopy, high resolution X-ray diffraction and Raman spectroscopy. Field emission scanning electron microscopy measurement allowed us to observe the morphology of the porous samples, and we found that the pore density increased with etching duration. From high resolution X-ray diffraction characterisation, the width at half maximum value of the rocking curve at (0002) and (10 12) plane decrease for all porous samples because of the reduction in dislocation density. Furthermore, as compared to the as-grown sample, the porous samples exhibit a significant enhancement of Raman peak intensity because of multiple scattering of light from the GaN crystallite sidewalls. Overall, this study shows that the surface nanostructure could improve the structural and optical properties of GaN. This is an initial demonstration to show the prospect of the porous GaN structure in optical and sensor applications.

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Section: Resultsmentioning

confidence: 98%

Characteristics of porous GaN prepared by KOH photoelectrochemical etching

Radzali

Zainal

Yam

et al. 2014

Materials Research Innovations

View full text Add to dashboard Cite

show abstract

“…It indicates that the surface morphologies of the film had been greatly influenced by etching time. Owing to a significant lattice mismatch between ZnO and Al 2 O 3 (18.4%), ZnO films deposited on Al 2 O 3 contain large quantity of dislocation [14], and the etching operation occurring at the dislocation and boundary was preferable [19]. The etching rate along boundary was faster than that in the grain, as a result, the surface morphologies become rougher and rougher with the increasing etching time.…”

Section: Resultsmentioning

confidence: 99%