The Surface Properties of Oxidized Silicon

Abstract

Een deel van het onderzoek werd uitgevoerd in nauwe samenwerking met M. V. Whelan, M.Sc.M.E. Zijn metingen en inzichten, alsmede de denkbeelden van Ir. G. Brouwer en gesprekken met vele andere kollega's hebben mij vaak op een nieuw spoor gezet.Ik ben de direktie van het Natuurkundig Laboratorium er zeer erkentelijk voor, dat zij mij in staat heeft gesteld ook met buitenlandse onderzoekers waardevolle kontakten te kunnen onderhouden.Tenslotte dank ik deze direktie voor de faciliteiten die mij verleend werden om het werk in deze vorm te kunnen afronden. CONTENTS

Quasi‐Monolayer Black Phosphorus with High Mobility and Air Stability

“…By contrast, the formation of P 4 O 2 (LiH‐BP sample) does not lead to degradation of surface crystallinity, as evidenced by the sharp LEED spots shown in the inset of Figure d, suggesting that these are just surface adsorbed oxygen. LiH is a good electron donor and can donate electrons to the electron trap sites in BP or can neutralize the hole oxidizers in BP, the latter is analogous to strategies used to counteract photocorrosion in common semiconductors, therefore the enhanced oxidation‐resistance of LiH‐BP can be due to the lowered chemical reactivity of BP following the passivation of oxygen‐reactive defect sites by LiH . The relatively higher stability of LiH as compared to Li in the ambient is due to its much lower reactivity with N 2 and O 2 compared to Li …”

The Effects of HCl Residual Treatment on MNOS Memory Transistors

“…However, this was not judged to be a serious drawback. As Kooi has shown (8) heat-treatment of uncoverd oxides above 600~ for a few minutes is sufficient to drive off hydrogen from the oxidesemiconductor interface. After HC1 treatment, the nitride reactor predeposition cycle keeps the uncovered tunnel oxides at temperatures in excess of 700~ in dry nitrogen for times longer than 10 min.…”

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers

“…Finally, when quantifying the active dopant and mobility depth profiles with DHE, the surface-depletion effect should be considered [ 41 – 42 ]. This results from carriers becoming trapped in surface states and can lead to a depletion of carriers below the surface.…”