The Superjunction Insulated Gate Bipolar Transistor Optimization and Modeling

Antoniou, Marina; Udrea, F.; Bauer, F.

doi:10.1109/ted.2009.2039260

Cited by 81 publications

(24 citation statements)

References 13 publications

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“…Increasing Ymid to achieve a deep superjunction results in an initial increased gate capacitance which decreases rapidly, and therefore enhanced ringing is present in the switching waveforms, which can result in worse switch-off losses compared to a NPT-IGBT [40], [41]. Increasing the doping concentration of the pillars is also detrimental to turn-off of the device as the depletion region expansion is slower [42]. The diode reverse recovery characteristic was, however, unaffected by the SJ structure [42].…”

Section: A Rc-igbt With Superjunction Structurementioning

confidence: 99%

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Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Findlay

Udrea

2019

IEEE Trans. Electron Devices

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The Reverse Conducting IGBT has several benefits over a separate IGBT and diode solution and has the potential to become the dominant device within many power electronic applications; including, but not limited to, motor control, resonant converters, and switch mode power supplies. However, the device inherently suffers from many undesirable design trade-offs which have prevented its widespread use. One of the most critical issues is the snapback seen in the forward conduction characteristic which can prevent full turn-on of the device and result in the device becoming unsuitable for parallel operation (required in many high voltage modules). This phenomenon can be suppressed but at the expense of the reverse conduction performance. This paper provides an overview of the technical design challenges presented by the RC-IGBT structure and reviews alternative device concepts which have been proposed in literature. Analysis shows that these alternate concepts either present a trade-off in performance characteristics, an inability to be manufactured, or a requirement for a custom gate drive.

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Section: A Rc-igbt With Superjunction Structurementioning

confidence: 99%

“…Increasing the doping concentration of the pillars is also detrimental to turn-off of the device as the depletion region expansion is slower [42]. The diode reverse recovery characteristic was, however, unaffected by the SJ structure [42].…”

Section: A Rc-igbt With Superjunction Structurementioning

confidence: 99%

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Findlay

Udrea

2019

IEEE Trans. Electron Devices

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“…But for 600V IGBT, FS-IGBTs need super thin wafer technology. So most studies on low voltage SJ FS-IGBT are focused on simulation research [7][8][9][10] . Internal transparent collector (ITC) IGBT is a new type of IGBT proposed for low voltage IGBT (for example 600V) [11] .…”

Section: On Sr Bv ∝mentioning

confidence: 99%

Simulation Study on Internal Transparent Collector IGBT Using Superjunction Drift

Hu¹,

Lv²,

Jia³

2013

Proceedings of the 3rd International Conference on Electric and Electronics

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Abstract-The super junction (SJ) drift is used in internal transparent collector IGBT. The influences of position of local carrier lifetime region, local carrier lifetime, and buffer layer doping level on the devices' trade-off characteristics have been simulation studied. The results show that for given local carrier liftetime, the turn-off losses may have a valley value E offmin . The higher local carrier lifetime is, the higher E offmin will be. Several factors are at work. Competition effects for excess carrier extraction through reverse biased super junction and forward biased collector may be one reason. Infinite excess carrier recombination velocity in local carrier lifetime control region leads to the back-emitter injection efficiency γ e be no less than certain value. In addition; increasing buffer layer doping level appropriately could win better trade-off and wider trade-off range.

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“…For a TFS-SJ-RC-IGBT comparable with a CoolMOS structure, the switching losses of the proposed device are lower than a standard RC-IGBT but a snapback is present in the I-V characteristic [6], [7]. The diode reverse recovery characteristic was unaffected by the SJ structure [8]. It was demonstrated that extending the SJ pillars further into the drift region to approach a full SJ structure could completely remove the snapback, but this device is not currently manufacturable.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor

Findlay

Udrea

Antoniou

2019

IEEE Electron Device Lett.

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This letter presents the Dual Implant SuperJunction (SJ) trench Reverse-Conducting (RC) Insulated Gate Bipolar Transistor (IGBT) concept with two implanted SJ pillars in the drift region; one from the cathode side and another from the anode side. The proposed device is compatible with current manufacturing processes and enables a full SJ structure to be achieved in a 1.2kV device as alignment between the pillars is not required. Extensive Technology Computer Aided Design (TCAD) simulations have been performed and demonstrated that utilising this dual implantation technique can result in a 77% reduction in turn-off losses for a full SJ structure, compared to a conventional RC-IGBT. The results show that any snapback in the on-state waveform significantly increases the turn-off losses and only a deep SJ device (pillar gap < 10μm) warrants the additional processing expense. 

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The Superjunction Insulated Gate Bipolar Transistor Optimization and Modeling

Cited by 81 publications

References 13 publications

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Simulation Study on Internal Transparent Collector IGBT Using Superjunction Drift

Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor

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