“…For measurement of deep-level spectra with this capacitive method modulation frequency ≥ 500 Hz were used. Such frequencies enable to eliminate the influence of surface states that are not caused by defective subsystem in subsurface layer [ 15 ]. Fig.…”
Section: Resultsmentioning
confidence: 99%
“…It will cause them to transition from tetrahedral positions to the hexagonal and vice versa [ 17 ]. Migration of interstitial atoms of silicon can cause displace of carbon atoms in defective complex C S –O I and formation C I –O I [ 15 ]. The result of this mechanism is the appearance of E9 energy level on spectrum of DL.…”
Changes of the defect structure of silicon p-type crystal surface layer under the influence of plastic deformation and high temperature annealing in oxygen atmosphere were investigated by deep-level capacitance-modulation spectroscopy (DLCMS) and IR spectroscopy of molecules and atom vibrational levels. Special role of dislocations in the surface layer of silicon during the formation of its energy spectrum and rebuilding the defective structure was established. It is shown that the concentration of linear defects (N ≥ 104 cm−2) enriches surface layer with electrically active complexes (dislocation-oxygen, dislocation-vacancy, and dislocation-interstitial atoms of silicon) which are an effective radiative recombination centers.
“…For measurement of deep-level spectra with this capacitive method modulation frequency ≥ 500 Hz were used. Such frequencies enable to eliminate the influence of surface states that are not caused by defective subsystem in subsurface layer [ 15 ]. Fig.…”
Section: Resultsmentioning
confidence: 99%
“…It will cause them to transition from tetrahedral positions to the hexagonal and vice versa [ 17 ]. Migration of interstitial atoms of silicon can cause displace of carbon atoms in defective complex C S –O I and formation C I –O I [ 15 ]. The result of this mechanism is the appearance of E9 energy level on spectrum of DL.…”
Changes of the defect structure of silicon p-type crystal surface layer under the influence of plastic deformation and high temperature annealing in oxygen atmosphere were investigated by deep-level capacitance-modulation spectroscopy (DLCMS) and IR spectroscopy of molecules and atom vibrational levels. Special role of dislocations in the surface layer of silicon during the formation of its energy spectrum and rebuilding the defective structure was established. It is shown that the concentration of linear defects (N ≥ 104 cm−2) enriches surface layer with electrically active complexes (dislocation-oxygen, dislocation-vacancy, and dislocation-interstitial atoms of silicon) which are an effective radiative recombination centers.
“…That is why the impact of elastic deformation on the properties of p-Si crystals is still considered to be an important scientific task. Redistribution of carrier concentration and impurities in deformed crystals are often characterized by the presence of dislocations which are effective getters of defects, especially on the surface of the crystal [ 4 , 5 ]. It is known [ 3 , 6 ] that the excitation of crystal electronic subsystems is also accompanied by the corresponding changes in the dislocation mobility.…”
Section: Introductionmentioning
confidence: 99%
“…That is why the investigation of radiation-induced processes on the surface layers of silicon crystals is still considered to be relevant. The surface with the deposited Al-contacts is an effective getter for the structural defects [ 5 – 7 ]. Underneath the deposited metal film, the mechanical stresses appear due to inconsistencies in lattice parameters of the film and the semiconductor [ 5 , 7 ].…”
Section: Introductionmentioning
confidence: 99%
“…The surface with the deposited Al-contacts is an effective getter for the structural defects [ 5 – 7 ]. Underneath the deposited metal film, the mechanical stresses appear due to inconsistencies in lattice parameters of the film and the semiconductor [ 5 , 7 ]. These stresses stimulate the processes of defects gettering (impurity atoms, interstitial silicon atoms, and vacancies) in contact layer.…”
Changes in conductivity of irradiated and non-irradiated p-Si mono-crystals under the influence of elastic uniaxial mechanical stress were investigated in this paper. An analytical expression was suggested to describe the dependence of surface conductivity as a function of mechanical stress and X-ray irradiation dose. It was shown that 4-angular nano-particles on the surface of “solar” silicon affect the electroconductivity changes under mechanical stress. It was established that X-ray irradiation causes the generation of point defects in silicon. These defects suppress the dislocations movement. It was shown that the resistivity of previously irradiated samples of “electronic” silicon is only slightly sensitive to the influence of uniaxial compression at certain deformation rate.
Методом ємнiсно-модуляцiйної спектроскопiї глибоких рiвнiв, IЧ-спектроскопiї коливних рiвнiв молекул та атомiв дослiджено змiни дефектної структури приповерхневого шару кристалiв кремнiю p-типу провiдностi за дiї пластичної деформацiї та високотемпературного вiдпалу в атмосферi проточного кисню. Установлено особливу роль дислокацiй у приповерхневому шарi кремнiю при формуваннi його енерґетичного спектра та перебудовi дефектної структури. Показано, що при концентрацiї дислокацiй 10 5 см −2 приповерхневий шар збагачується електрично активними комплексами (дислокацiя-кисень, дислокацiя-вакансiя, дислокацiямiжвузловий атом кремнiю), якi є ефективними центрами випромiнювальної рекомбiнацiї.Ключовi слова: кремнiй, дислокацiя, глибокий рiвень, IЧ-спектроскопiя, поверхневi стани, високотемпературний вiдпал.
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