2004
DOI: 10.1016/j.apsusc.2003.08.014
|View full text |Cite
|
Sign up to set email alerts
|

The study of the volume expansion of aluminum during porous oxide formation at galvanostatic regime

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

4
62
0

Year Published

2008
2008
2017
2017

Publication Types

Select...
6
2

Relationship

0
8

Authors

Journals

citations
Cited by 88 publications
(66 citation statements)
references
References 15 publications
4
62
0
Order By: Relevance
“…The measured current densities in Fig. 3 show the same variation as that predicted by equation (16). By applying a potential of 3.5 V, the electron can be assumed to escape by tunnelling from the well.…”
Section: Tio H E Mn Tio H Mnsupporting
confidence: 64%
See 2 more Smart Citations
“…The measured current densities in Fig. 3 show the same variation as that predicted by equation (16). By applying a potential of 3.5 V, the electron can be assumed to escape by tunnelling from the well.…”
Section: Tio H E Mn Tio H Mnsupporting
confidence: 64%
“…This process leads to the formation of a conductive porous coating layer of TiO 2 over the entire surface of the titanium film. This film is the preanodized TiO 2 [13][14][15][16][17].…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…The tracer studies supported earlier measurements of the rate of increase in pore wall height relative to stationary reference planes. [5][6][7] Both experiments revealed plastic flow in the pore walls at typical velocities of 0.1-1 nm/s. We developed a transport model of porous anodic alumina films, which validated the hypothesis of coupled electrical migration and viscous flow of oxide, through a detailed agreement with the tungsten tracer profiles.…”
mentioning
confidence: 99%
“…The flow of anodic oxide arises from field-assisted plasticity of the film and the generation of stress due to electrostriction and the formation of film material [14,15]. The displacement of film material from the pore base to the pore wall may explain the increased thickness of the alumina film with respect to the thickness of aluminium that is oxidized [16].…”
Section: Introductionmentioning
confidence: 99%