The study of quantum efficiency in PIN photodiodes in terms of temperature and capacitive effects under non-uniform illumination conditions

Alizade, Roshanak; Ghadimi, Abbas

doi:10.1007/s11082-018-1728-1

Cited by 3 publications

(11 citation statements)

References 8 publications

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“…These semiconductors were chosen in order to have a high absorption between 1.0

and 1.6

, namely at 1.3

in the center of the original optical band (O-band). Both semiconductors were lattice matched [ 1 , 4 , 7 , 8 , 10 ].…”

Section: Methodsmentioning

confidence: 99%

“…The parameter variations with temperature are reported in [ 7 , 13 , 14 ]. The used carrier velocity models are also dependent on the applied electric field (applied voltage) and on the residual donor concentration in the absorption region [ 1 ].…”

Section: Methodsmentioning

confidence: 99%

“…They allow us to convert optical into electrical power and, consequently, the transition between the two domains allow us to consider both domains’ advantages when designing a communication system. A commonly analyzed structure is the PIN type, mainly due to its good frequency response, great sensitivity, and excellent signal-to-noise noise ratio [ 1 , 2 , 3 , 4 , 5 , 6 , 7 ].…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, a given photodetector might act as a sensor, due to the fact that the material properties must change with certain stimuli [ 7 ]. This might lead to changes in the figure of merit values.…”

Section: Introductionmentioning

confidence: 99%

“…In the case of semiconductors materials, some material dependencies are commonly studied, such as the variation of their properties with temperature [ 7 ]. InP-In

As photodetectors work at 1300 nm, with tens or hundreds of GHz of bandwidth [ 5 , 8 , 9 , 10 ].…”

Section: Introductionmentioning

confidence: 99%

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Modelling and Design of a Dual Depletion PIN Photodiode as Temperature Sensor

Lameirinhas

Torres

Bernardo

2023

Sensors

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Nowadays, optical systems play an important role in communications. Dual depletion PIN photodiodes are common devices that can operate in different optical bands, depending on the chosen semiconductors. However, since semiconductor properties vary with the surrounding conditions, some optical devices/systems can act as sensors. In this research work, a numerical model is implemented to analyze the frequency response of this kind of structure. It considers both transit time and capacitive effects, and can be applied to compute photodiode frequency response under nonuniform illumination. The InP-In0.53Ga0.47As photodiode is usually used to convert optical into electrical power at wavelengths around 1300 nm (O-band). This model is implemented considering an input frequency variation of up to 100 GHz. The focus of this research work was essentially the determination of the device’s bandwidth from the computed spectra. This was performed at three different temperatures: 275 K, 300 K, and 325 K. The aim of this research work was to analyze if a InP-In0.53Ga0.47As photodiode can act as a temperature sensor, to detect temperature variations. Furthermore, the device dimensions were optimized, to obtain a temperature sensor. The optimized device, for a 6 V applied voltage and an active area of 500 μm2, had a total length of 2.536 μm, in which 53.95% corresponded to the absorption region. In these conditions, if the temperature increases 25 K from the room temperature, one should expect a bandwidth increase of 8.374 GHz, and if it decreases 25 K from that reference, the bandwidth should reduce by 3.620 GHz. This temperature sensor could be incorporated in common InP photonic integrated circuits, which are commonly used in telecommunications.

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“…These semiconductors were chosen in order to have a high absorption between 1.0

and 1.6

, namely at 1.3

in the center of the original optical band (O-band). Both semiconductors were lattice matched [ 1 , 4 , 7 , 8 , 10 ].…”

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…In the case of semiconductors materials, some material dependencies are commonly studied, such as the variation of their properties with temperature [ 7 ]. InP-In

As photodetectors work at 1300 nm, with tens or hundreds of GHz of bandwidth [ 5 , 8 , 9 , 10 ].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Modelling and Design of a Dual Depletion PIN Photodiode as Temperature Sensor

Lameirinhas

Torres

Bernardo

2023

Sensors

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A revision of the semiconductor theory from history to applications

Bernardo,

Lameirinhas,

de Melo Cunha

et al. 2024

Discov Appl Sci

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Semiconductors play a crucial role in modern technology across various fields. The term “semiconductor” was introduced in the XVIII century, marking the beginning of a journey filled with discoveries and technological advancements. This article offers a comprehensive review of the historical landmarks in semiconductor development and explores the associated phenomena concerning different types of photodetectors. It also examines the key performance metrics of commonly used semiconductor materials, considering the structural variations. Additionally, the article highlights various applications of semiconductors, illustrating their significance in everyday life. By doing so, it aims to engage new readers while providing a foundational understanding for those interested in delving into this field.

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Optoelectronic Characterisation of Silicon and CIGS Photovoltaic Solar Cells

Ravasco,

Lameirinhas,

Bernardo

et al. 2024

American Journal of Engineering and Applied Sciences

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Throughout these years, many materials have been subjected to tests and experiments, creating several photovoltaic technologies and generations. In this article, some of these generations are compared, namely silicon and Copper Indium Gallium di-Selenide (CIGS), in order to characterize both materials in an optoelectronic way. Using a 2D solar cell PIN model using COMSOL software, both materials are tested, obtaining the responsivity and the I(P) curves. In addition, experimental tests are also conducted, in order to have real results to compare. Additionally, Scanning Electron Microscopy (SEM) was performed to analyze the morphology of photovoltaics inside layers. The obtained results show that Si solar cells present properties close to those predicted by the 2D model, in opposition to the CIGS. That difference was found to be the amount of generated current and more, gallium concentration has a remarkable effect on the CIGS photovoltaics real performance.

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The study of quantum efficiency in PIN photodiodes in terms of temperature and capacitive effects under non-uniform illumination conditions

Cited by 3 publications

References 8 publications

Modelling and Design of a Dual Depletion PIN Photodiode as Temperature Sensor

Modelling and Design of a Dual Depletion PIN Photodiode as Temperature Sensor

A revision of the semiconductor theory from history to applications

Optoelectronic Characterisation of Silicon and CIGS Photovoltaic Solar Cells

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