The structure of recombination centres in activated ZnSe phosphors

Kukk, P. L.; Palmre, O.; Mellikov, E.

doi:10.1002/pssa.2210700106

Cited by 10 publications

(2 citation statements)

References 31 publications

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“…Thus, it became possible to determine the chemical nature of radiative and non-radiative recombination centres and also the chemical nature of the predominant impurities and charged defects at low temperatures. As a result the defect structures of CdS:Cu:CI, ZnSe:Cu:Cl, ZnS:Cu:CI, CdS:Ag:CI, and CulnSe, were established [ll, [13][14][15][16].…”

Section: Low-temperature Methodsmentioning

confidence: 99%

Thermodynamicmodelling of Electronic Materials

Mellikov¹,

Öpik²

1999

Proceedings of the Estonian Academy of Sciences. Chemistry

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The process of materials preparation is a typical physico-chemical process operated by classical physico-chemical parameters such as temperature, pressure, and the composition of materials. The review offers examples of how the thermodynamic modelling has been used for the characterization and preparation of two different types of electronic materialssemiconductive compounds and conductive polymers.

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Section: Low-temperature Methodsmentioning

confidence: 99%

Thermodynamicmodelling of Electronic Materials

Mellikov¹,

Öpik²

1999

Proceedings of the Estonian Academy of Sciences. Chemistry

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“…Соотношение (18) сохраняется и для «замороженных» дефектов в «мгновенно» охлажденных до низких температур образцах. Это важное обстоятельство использовано при создании люминесцентных методов квазихимического анализа низкотемпературного дефектного состава широкозонных полупроводников, базирующихся на степенной зависи мости интенсивности свечения от концентрации оптически активных…”

Section: учитывая экспоненциальную зависимостьunclassified

Определение Квазихимических Параметров Точечных Дефектов В Полупроводниковых Соединениях

Aarna¹,

Altosaar²,

Kukk³

et al. 1985

Proceedings of the Academy of Sciences of the Estonian SSR. Che

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Luminescent centre formation processes in activated CdS phosphors

Kukk

Erm

1983

Phys. Stat. Sol. (a)

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Photoluminescent (PL) spectra in copper (1017 cm−3) and chlorine (5 × 1015 cm−3) doped cadmium sulphide, are measured in dependence on a high‐temperature treatment (from 150 to 1050 °C with 50 K steps). The temperature dependence of emission intensity is found to be exponential. Using a quasichemical approach the structure and concentration of dominant impurity defects in CdS:Cu:Cl, as well as the defect forming processes and their thermodynamical parameters are clarified. An emission band with λmax = 730 nm (k'‐band) is identified with the SA‐band and the emission centre V″CdCl S˙. An approximated defect diagram is built in the temperature range from 150 to 1050 °C. It appears that the intensity of emission bands, similarly to the high‐temperature conductivity, may serve, under certain conditions, as a source for experimental data for a quasichemical analysis of point defect formation reactions in AIIBVI compounds.

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The structure of recombination centres in activated ZnSe phosphors

Cited by 10 publications

References 31 publications

Thermodynamicmodelling of Electronic Materials

Thermodynamicmodelling of Electronic Materials

Определение Квазихимических Параметров Точечных Дефектов В Полупроводниковых Соединениях

Luminescent centre formation processes in activated CdS phosphors

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