The structure of evaporated silicon oxide films and its effect on the electrical and optical properties

Allam, D. S.; Pitt, K.E.G.

doi:10.1016/0040-6090(68)90044-8

Cited by 22 publications

(5 citation statements)

References 17 publications

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“…Such effects can be particularly important for low temperature deposition . E‐beam oxide formed from a pure source of SiO 2 (i.e., pellets) can involve nanoscale fragmentation during evaporation, which can potentially lead to alterations in the stoichiometry and reductions in density …”

Section: Dissolution Studies Of Different Types Of Oxidesmentioning

confidence: 99%

Dissolution Behaviors and Applications of Silicon Oxides and Nitrides in Transient Electronics

Kang

Hwang

Cheng

et al. 2014

Adv Funct Materials

220

293

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Silicon oxides and nitrides are key materials for dielectrics and encapsulation layers in a class of silicon-based high performance electronics that has ability to completely dissolve in a controlled fashion with programmable rates, when submerged in bio-fl uids and/or relevant solutions. This type of technology, referred to as "transient electronics", has potential applications in biomedical implants, environmental sensors, and other envisioned areas. The results presented here provide comprehensive studies of transient behaviors of thin fi lms of silicon oxides and nitrides in diverse aqueous solutions at different pH scales and temperatures. The kinetics of hydrolysis of these materials depends not only on pH levels/ion concentrations of solutions and temperatures, but also on the morphology and chemistry of the fi lms, as determined by the deposition methods and conditions. Encapsulation strategies with a combination of layers demonstrate enhancement of the lifetime of transient electronic devices, by reducing water/vapor permeation through the defects.

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Section: Dissolution Studies Of Different Types Of Oxidesmentioning

confidence: 99%

Dissolution Behaviors and Applications of Silicon Oxides and Nitrides in Transient Electronics

Kang

Hwang

Cheng

et al. 2014

Adv Funct Materials

220

293

View full text Add to dashboard Cite

show abstract

“…When the deposition method is e-beam evaporation, it is common for SiO 2 to sublimate and contact the surface in roughly spherical shapes of various size [24][25][26][27]. These shapes inevitably coalesce into the amorphous structure SiO 2 is well known to form, and on our devices it was found that the uppermost surface of the oxide retained a rough topography consisting of these deformed spherical shapes, ranging in size from roughly 100-300 nm, as shown in figure 8.…”

Section: Oxide Layers-structure and Transmission Currentmentioning

confidence: 69%

Emission current enhancement from quasi-freestanding epitaxial graphene microstructure electron emitters through surface layered silicon dioxide

Lewis,

Swart,

Pedowitz

et al. 2024

2D Mater.

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Enhanced electron emission from oxide-encapsulated quasi-freestanding bilayer epitaxial graphene (QFEG) devices is reported, including one emission current of 9.4 µA and successful emission even with oxide thicknesses of up to 1.25 µm. The low operating temperature (215 oC), and applied electric fields under which the devices operate indicate electron emission is due to phonon-assisted electron emission (PAEE), wherein forward-scattering hot phonons impart the necessary energy for the electrons to escape the graphene as an emission current. A suite of device structures and behaviors are cataloged, and various emission behaviors are demonstrated through encapsulating oxide layers. Emission current enhancement due to electron multiplication in the oxide layers is observed across multiple devices and oxide thicknesses.

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“…Enfin, il faut noter l'effet getter très important de SiO sur H20 et 02 [9], [10], [11]. Les pressions partielles de vapeur d'eau sont réduites dans un rapport 3 et celles d'oxygène dans un rapport 2 entre le début du dégazage de la source (spectre 3) et la fin de l'évaporation (spectre 13) alors que la pression totale a conservé sa valeur de départ.…”

Section: Tableauunclassified

Préparation d'échantillons Mössbauer par évaporation sous vide

Marchal¹,

Janot²

1972

Rev. Phys. Appl. (Paris)

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CO n° 72 (Rèçu le 5 mai 1972, révisé le 17 juillet 1972) Résumé. 2014 On décrit une méthode de préparation d'échantillons susceptibles d'être observés en spectrométrie Mössbauer de transmission. Il s'agit de couches multiples Al-Fe-SiO obtenues par évaporation sous vide, grâce à un dispositif automatique. Trois sources d'évaporation fonctionnent simultanément ; les échantillons se présentent successivement devant chacune d'elles pendant un temps qui dépend de l'épaisseur des dépôts imposée. L'analyse au spectromètre de masse des gaz résiduels pendant les différentes phases de l'opération indique qu'il existe un risque non négligeable de pollution des échantillons par la vapeur d'eau et l'oxyde de carbone, si la vitesse de pompage n'est pas suffisante. Abstract. 2014 A description is given of a method to obtain vacuum-deposited thin iron films, as monolayers, to be investigated by Mössbauer technique in transmission geometry. Iron is condensed on a thin aluminium film deposited at first, then covered with SiO, then another aluminium film is deposited... and so on to form a number of superposed sandwiches thus increasing the effective absorber thickness. Iron, SiO and aluminium together are evaporated and the sample « looks at » each cell one after to other during a time depending of the wanted thickness. Residual gazes in the vacuum-room are analysed by mass spectrometer ; it appears that corrosion by water molecules or carbon oxyde occurs if the vacuum rate is too weak.

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The structure of evaporated silicon oxide films and its effect on the electrical and optical properties

Cited by 22 publications

References 17 publications

Dissolution Behaviors and Applications of Silicon Oxides and Nitrides in Transient Electronics

Dissolution Behaviors and Applications of Silicon Oxides and Nitrides in Transient Electronics

Emission current enhancement from quasi-freestanding epitaxial graphene microstructure electron emitters through surface layered silicon dioxide

Préparation d'échantillons Mössbauer par évaporation sous vide

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