The structure of 1.5–2.0 eV band gap amorphous silicon films prepared by chemical annealing

Futako, W.; Kamiya, Toshio; Fortmann, C.M.; Shimizu, Isamu

doi:10.1016/s0022-3093(99)00756-5

Cited by 26 publications

(30 citation statements)

References 9 publications

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“…First, the optical band gap increases with increasing contents of bonded hydrogen in the films. [12][13] This behavior can be explained by the partial replacement of Si-Si bonds with Si-H bonds of greater binding energy. The presence of hydrogen causes the valence-band edge to move towards the lower energy side by removing the Si-Si bonding orbitals in the neighborhood of the valence band edge.…”

Section: Resultsmentioning

confidence: 99%

Effect of Annealing on a-Si:H Thin Films Fabricated by RF Magnetron Sputtering

Kim¹,

Kim²,

Choi³

2009

Korean. J. Mater. Res.

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The effect of annealing under argon atmosphere on hydrogenated amorphous silicon (a-Si:H) thin films deposited at room temperature and 300 o C using Radio Frequency (RF) magnetron sputtering has been investigated. For the films deposited at room temperature, there was not any increase in hydrogen content and optical band gap of the films, and as a result, quality of the films was not improved under any annealing conditions. For the films deposited at 300 o C, on the other hand, significant increases in hydrogen content and optical band gap were observed, whereas values of microstructure parameter and dark conductivity were decreased upon annealing below 300 o C. In this study, it was proposed that the Si-H X bonding strength is closely related to deposition temperature. Also, the improvement in optical, electrical and structural properties of the films deposited at 300 o C was originated from thermally activated hydrogen bubbles, which were initially trapped at microvoids in the films.

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Section: Resultsmentioning

confidence: 99%

Effect of Annealing on a-Si:H Thin Films Fabricated by RF Magnetron Sputtering

Kim¹,

Kim²,

Choi³

2009

Korean. J. Mater. Res.

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“…Substituting (6) and (7) into (2) and (3), we obtain at steady-state conditions (dp/dt = dn/dt = 0) in the case of one-dimensional system (which is the subject of our subsequent consideration) the following equations:…”

Section: Model Of An Active Region In the A-si:h Solar Cellmentioning

confidence: 99%

“…we have used the linear approximation E g = (1.58 + 0.017 [H]) eV, which corresponds to the data of the work [6]. In practice, the coefficient before the hydrogen content [H] can vary from 0.012 up to 0.025 depending on a-Si:H material quality.…”

Section: Calculation Of Dos and Position Of Fermi-level In A-si:hmentioning

confidence: 99%

Efficiency a-Si:H solar cell. Detailed theory

Kryuchenko¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. We develop a detailed formalism to photoconversion efficiency η of hydrogenated amorphous silicon ( a-Si:H ) based solar cells with a contact grid. This efficient three-dimensional model allows firstly optimization of the p i n    sandwich in terms of carrier mobilities, thickness of the layers, doping levels and others. Secondly, geometry of the grid fingers that conduct the photocurrent to the bus bars and ITO/SiO 2 layers has been optimized, and the effect of non-zero sun beam incidence angles has been included as well. The model allows optimization of the amorphous Si based solar cells in a wide range of key parameters.

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“…The authors of that study showed that by using a triode and reducing the growth rate down significantly, they could reduce the light-induced instability of a-Si:H devices. An alternative technique to reduce instability, namely chemical annealing, was suggested some time ago [4,5]. Chemical annealing relies on the principle that by subjecting a thin a-Si:H film to ion bombardment, one can reorder its structure and thereby reduce the SiH 2 type bonds, leading to better stability.…”

Section: Introductionmentioning

confidence: 99%

“…Previous work showed that subjecting a thin a-Si:H film to ion bombardment from a H ion beam resulted in a more ordered phonon microstructure [6]. Unfortunately, the previous work on devices [5] using chemical annealing did not produce good quality devices, and therefore, it was not clear that chemical annealing can indeed lead to better stability in good quality devices. In this paper, we show that one can make good devices using chemical annealing, and annealing improves the stability of these devices significantly.…”

Section: Introductionmentioning

confidence: 99%