The structure and optical properties of SiC film on Si (111) substrate with a ZnO buffer layer by RF-magnetron sputtering technique

Zhang, Sha; Wu, Xuemei; Zhuge, Lanjian

doi:10.1016/j.physleta.2006.01.105

Cited by 25 publications

(9 citation statements)

References 22 publications

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“…2. There are nine vibrational relative phenomena also have been explained in previous papers [7,11,12].…”

Section: Resultsmentioning

confidence: 67%

“…The new peak 6 due to the Si-O-Zn stretching vibration [9,10] is observed, suggesting that the interface between the ZnO and SiC have become more compact and complicated. The peak 9 centered at 1105 cm −1 corresponds to Si-O stretching vibration absorption attributed to the interstitial oxygen impurities dissolved in the silicon substrate according to our previous work [7]. Peak 7 assigned to the Si-O asymmetric stretching mode (ASM) [10] appears due to oxygen absorption during annealing.…”

Section: Methodsmentioning

confidence: 64%

“…Since the f m in the ZnO/SiC structure is about five, SiC has been employed to improve the crystalline quality of ZnO films on Si substrates as the buffer layer [6]. Presently, some efforts have been attempted to enhance the luminescent intensities and study or demonstrate the origin of photoluminescence (PL) by adding a ZnO buffer layer between the substrate and the SiC film [7].…”

Section: Introductionmentioning

confidence: 99%

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The structure and photoluminescence properties of ZnO/SiC multilayer film on Si substrate

Chen

Zhuge

et al. 2007

Front. Mater. Sci. China

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ZnO/SiC multilayer film has been fabricated on a Si (111) substrate with a silicon carbide (SiC) buffer layer using the RF (radio frequency)-magnetron technique with targets of a ceramic polycrystalline zinc oxide (ZnO) and a composite target of pure C plate with attached Si chips on the surface. The as-deposited films were annealed at a temperature range of 600-1000°C under nitrogen atmosphere. The structure and photoluminescence (PL) properties of the samples were measured using X-ray diffractometry (XRD), Fourier transform infrared (FTIR) spectroscopy and PL spectrophotometry. By increasing the annealing temperature to 800°C, it is found that all the ZnO peaks have the strongest intensities, and the crystallinity of ZnO is more consistent on the SiC buffer layer. Further increase of the annealing temperature allows the ZnO and SiC layers to penetrate one another, which makes the interface between ZnO and SiC layer become more and more complicated, thus reduces the crystallinities of ZnO and SiC. The PL properties of a ZnO/ SiC multilayer are investigated in detail. It is discovered that the PL intensities of these bands reach their maximum after being annealed at 800°C. The PL peaks shift with an increase in the annealing temperature, which is due to the ZnO and SiC layers penetrating reciprocally. This makes the interface more impacted and complicated, which induces band structure deformation resulting from lattice deformation.

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“…2. There are nine vibrational relative phenomena also have been explained in previous papers [7,11,12].…”

Section: Resultsmentioning

confidence: 67%

Section: Methodsmentioning

confidence: 64%

Section: Introductionmentioning

confidence: 99%

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The structure and photoluminescence properties of ZnO/SiC multilayer film on Si substrate

Chen

Zhuge

et al. 2007

Front. Mater. Sci. China

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“…For instance, these materials are commonly used in electronics [1], cutting tools [2] or surgical implants [3]. Over the last years, nanosized materials have raised increasing interest taking advantage of their specific physical [4] or mechanical [5] properties. Moreover, the high density of grain boundaries inside nanostructured ceramics is assumed to permit a fast recovery of irradiation induced defects [6].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of nanosized zirconium carbide by laser pyrolysis route

Combemale

Leconte

Portier

et al. 2009

Journal of Alloys and Compounds

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“…On the other hand, amorphous SiC films have interest related to their high hardness and optical properties and have potential applications as hard, wear resistant coatings, masking material in Si micromaching technology as well as for the formation of optical windows, filters, and color sensors [1,2]. Recently, plasma-assisted deposition methods such as plasma enhanced CVD [3,4], electron cyclotron resonance (ECR) [5,6], the conventional physical vapour deposition methods (magnetron sputtering [7,8], pulsed laser deposition [9,10]), ion implantation [11], and molecular beam epitaxy [12] methods have been used to grow SiC films on Si substrate. However, these methods need high grown temperature, which process defect creation, resulting from high tensile stress generated from a temperature dependent difference in the thermal expansion coefficient between SiC and Si, and involve many pollutions of impurity in the films such as H element.…”

Section: Introductionmentioning

confidence: 99%

Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

Chen

Zhuge

2008

Research Letters in Physical Chemistry

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Silicon carbide (SiC) films were prepared by single and dual-ion-beam sputtering deposition at room temperature. An assisted Ar + ion beam (ion energy Ei = 150 eV) was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si-C bond in the film has increased. At the same time, the excess C atoms or the size of the sp 2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si-C bond.

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The structure and optical properties of SiC film on Si (111) substrate with a ZnO buffer layer by RF-magnetron sputtering technique

Cited by 25 publications

References 22 publications

The structure and photoluminescence properties of ZnO/SiC multilayer film on Si substrate

The structure and photoluminescence properties of ZnO/SiC multilayer film on Si substrate

Synthesis of nanosized zirconium carbide by laser pyrolysis route

Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

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