The structure and electronic properties of liquid semiconductors. III. Structural evidence for ionicity in liquid Tl<sub>2</sub>Te

Gay, Maxime; Enderby, J. E.; Copestake, Andrew

doi:10.1088/0022-3719/15/22/010

Cited by 27 publications

(7 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the whole range of Tl molar fractions, a tetragonal TlSe was observed, while tetragonal Tl 2 Se was observed for x ≥ 0.58 ( x max = 0.9) alongside hexagonal Tl. Gay, in 1982, described, through neutron scattering measurements the ordered structure of liquid Tl 2 Te, [ 128 ] and in 1994, Barnes et al., have found similar results as Gay, in liquid Tl 2 Se. [ 129 ] In the latter experiments, liquid Tl 2 Se has shown a predominantly ionic character and an unusual coordination numbers of 11 around Tl, which are larger than the antifluorite compounds, which have a coordination number of 8.…”

Section: Thallium Chalcogenidesmentioning

confidence: 71%

“…[210] Thallium chalcogenides can be both solid and liquid, with the latter possessing a great thermopower and can be used as heterophase generators. [128,129] The Tl-S system was first proposed by Hansen and Anderko [211] who identified 4 different Tl-S phases. Further studies have elucidated that at least 5 phases are present: Tl 2 S, Tl 4 S 3 , TlS, TlS 2 , and Tl 2 S 5 .…”

Section: Thallium Chalcogenidesmentioning

confidence: 99%

“…[107,[122][123][124][125] Being at the end of the transition series, group III cations do not possess an open d-shell, thus most of them present covalent bonding with chalcogenides. [126] Although some ionic character in Al, [112,113,127] and Tl chalcogenides [128,129] has been observed, where the latter of Tl 2 Se and Tl 2 Te melt in a liquid state. Despite the poor knowledge of these materials, some of these compounds Small 2023, 19,2206430 Table 1.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A New, Thorough Look on Unusual and Neglected Group III‐VI Compounds Toward Novel Perusals

Guzzetta

Jellett

Azadmanjiri

et al. 2023

Small

View full text Add to dashboard Cite

been permitted. [4][5][6][7] Although, the employment of 2D nanosheets, especially in biomedicine, is still in its primordial state and has permitted to the realization of novel advancements in such applications. [8][9][10] It needs to be highlighted that some of these compounds present mild cytotoxicity and dose-dependent induced metabolic disadvantages. [11,12] Albeit direct use in the body is not yet advisable, it is possible to indirectly employ these compounds in the creation of wearable devices for tracking vital parameters. [13] Research on such topics, both from fundamental and applied studies has led to an exponential increase in the number of publications during the last 10 years (Figure 1c). [14] One of the pivotal characteristics of 2D nanostructures is their high specific area-to-thickness ratio, which can be easily modulated through delamination processes. [15] Ultimately, the smallest crystals that can be created are mono-or bi-atomic layers. To understand how the nanocrystals form from bulk, it is important to comprehend the main characteristic features of the macrocrystals. A layered crystal lattice is presented in Figure 2. These crystals are governed by strong, covalent (or ionic) in-plane bonds, which are often arranged into hexagonal honeycombs. These individual sheets are linked together by inter-plane (inter-layer), and weak van der Waals (vdW) forces. The bond energies between the in-plane atoms, are the major contribution on the total energy of the lattice, leaving weak inter-plane interactions with relatively large distances (i.e., about few hundred picometers in graphene). These large inter-planar spaces are suitable attack points for size reduction, [16][17][18] which requires an external energy input from a providing source in order to delaminate single-layer crystals.The in-plane honeycomb structure is responsible for electrical transport and associated phenomena. For instance, the great mobility of p-electrons and their delocalization on the surface allows excellent transport in graphene. [23,24] However, in some other electro-and photoactivated semiconductors based on 2D materials, the electrical transport on the surface is responsible for the hole-electron confinement. [25] It can also produce poor electrical conduction by 2D materials such as hexagonal boron nitride (hBN) and so making them electrical insulators (see Figure 1a). [26] These differences in the layersThe attention on group III-VI compounds in the last decades has been centered on the optoelectronic properties of indium and gallium chalcogenides. These outstanding properties are leading to novel advancements in terms of fundamental and applied science. One of the advantages of these compounds is to present laminated structures, which can be exfoliated down to monolayers. Despite the large knowledge gathered toward indium and gallium chalcogenides, the family of the group III-VI compounds embraces several other noncommon compounds formed by the other group III elements. These compounds present various crystal lattices...

show abstract

Section: Thallium Chalcogenidesmentioning

confidence: 71%

Section: Thallium Chalcogenidesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A New, Thorough Look on Unusual and Neglected Group III‐VI Compounds Toward Novel Perusals

Guzzetta

Jellett

Azadmanjiri

et al. 2023

Small

View full text Add to dashboard Cite

show abstract

“…On the other hand, existing diffraction information of liquid T12Te has noted that an ionic liquid model containing TP+ and Te2-ions is applicable for the short-range structure of this liquid [5], or that the structure factor of Te-Te pairs in the liquid is considerably different from that of pure Te [6]. A further study of liquid systems which exhibit a similar anomaly of electron transport properties should be necessary in order to improve such less clear situation for the liquid TI-X system.…”

Section: Z])mentioning

confidence: 99%

The Semiconduction in the Molten Tl‐CuTlTe₂ System

Uemura

Wada

Takahara

et al. 1983

Physica Status Solidi (b)

View full text Add to dashboard Cite

Measurements of the electrical conductivity, the magnetic susceptibility, and the thermoelectric power for the molten TI-CuTlTe, system are made in wide temperature and composition ranges. It is observed that the conductivity for the system falls abruptly a t the composition of 66.7 molyo TI and the thermoelectric power changes its sign around this composition. The diamagnetic susceptibility also shows a sharp maximum at the corresponding composition. These anomalies of electronic properties indicate that molten TI-CuTlTe, system gives rise to a metal -nonmetal transition a t the composition of CuTl,Te,. The experimental results of the present work are compared with the previous data of molten TI-chalcogenide systems which exhibit a similar electronic behaviour and are discussed using some electron transport theories often employed in amorphous and liquid semiconductors.Die elektrische Leitfahigkeit, die magnetische Suszeptibilitlt und die Thermospannung werden fur dae geschmolzene Tl-CuTlTe,-System in einem grol3en Temperatur-und Zusammensetzungsbereich gemessen. Es wird beobachtet, da13 die Leitfahigkeit des Systems abrupt bei der Zusammensetzung 66,7 Molyo TI abnimmt und die Thermospannung bei dieser Zusammensetzung ihr Vorzeichen andert. Die diamagnetische Suszeptibilitiit zeigt ebenfalls ein scharfes Maximum bei der entsprechenden Zusammensetzung. Diese Anomalien der elektronischen Eigenschaften zeigen, daB geschmolzene T1-CuTlTe,-Systeme AnlaB zu einem Metall-Nichtmetall-ubergang bei der Zusammensetzung von CuT1,Te geben. Die experimentellen Ergebnisse werden mit fruheren Werten an geschmolzenen T1-Chalkonid-Systemen, die ein iihnliches elektronisches Verhalten zeigen, verglichen und mit einigen Elektronentransporttheorien, die oft in amorphen und flussigen Halbleitern benutzt werden, diskutiert.

show abstract

“…(1) is rewritten as (6) By eliminating the term n of eqs. (5) and (6) the thermoelectric power easily combines with the electrical conductivity.…”

mentioning

confidence: 99%

Electronic Properties of the Liquid In–AgInTe<SUB>2</SUB> System

et al. 1987

View full text Add to dashboard Cite

Measurements of the electrical conductivity, magnetic susceptibility and thermoelectric power in the liquid In-AgInTe2 system were carried out over wide temperature and composition ranges. A considerable temperature change of the electronic properties in liquid AgInTe2 decreases gradually up to 66.7 mol%In with the addition of In and it becomes extremely small in the In-rich region more than this composition suggesting that the system is rather metallic. This was also confirmed by the fact that the thermoelectric power changes its sign around this composition and indicates a small value in the In-rich region. On the basis of a strong scattering model the bonding nature of the system is discussed using data of the electrical conductivity and the magnetic susceptibility. The result indicates that liquid AgInTe2 exhibits a covalentic character as observed in most of the liquid chalcogenides, and an ionic contribution is rather predominant in the stoichiometric composition range of AgIn3Te2. Furthermore, the comparison of the degree of electron localization is made between liquid AgIn3Te2 and AgTl3Te2 from the present and previously reported experimental results.

show abstract

The structure and electronic properties of liquid semiconductors. III. Structural evidence for ionicity in liquid Tl₂Te

Cited by 27 publications

References 13 publications

A New, Thorough Look on Unusual and Neglected Group III‐VI Compounds Toward Novel Perusals

A New, Thorough Look on Unusual and Neglected Group III‐VI Compounds Toward Novel Perusals

The Semiconduction in the Molten Tl‐CuTlTe₂ System

Electronic Properties of the Liquid In–AgInTe<SUB>2</SUB> System

Contact Info

Product

Resources

About

The structure and electronic properties of liquid semiconductors. III. Structural evidence for ionicity in liquid Tl2Te

Cited by 27 publications

References 13 publications

A New, Thorough Look on Unusual and Neglected Group III‐VI Compounds Toward Novel Perusals

A New, Thorough Look on Unusual and Neglected Group III‐VI Compounds Toward Novel Perusals

The Semiconduction in the Molten Tl‐CuTlTe2 System

Electronic Properties of the Liquid In&ndash;AgInTe<SUB>2</SUB> System

Contact Info

Product

Resources

About

The structure and electronic properties of liquid semiconductors. III. Structural evidence for ionicity in liquid Tl₂Te

The Semiconduction in the Molten Tl‐CuTlTe₂ System

Electronic Properties of the Liquid In–AgInTe<SUB>2</SUB> System