2014
DOI: 10.1016/j.spmi.2014.01.005
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The Structural, optical and electrical properties of nanocrystalline ZnO:Al thin films

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Cited by 52 publications
(17 citation statements)
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“…The films were deposited at a substrate temperature of 350 • C. The optical properties of undoped ZnO thin film such a band gap energy and the Urbach energy were obtained from our previous paper [21], and various papers [22][23][24][25][26][27][28][29][30]; they have studied the effect of substrate temperature and precursor molarity on the structural and the optical properties of undoped ZnO thin films, these results are shown in Table 1 In this study, we will show the evolution of the precursor molarity on the Urbach energy and band gap energy, we tried to establish correlations for each model proposed. In our calculations, the Urbach energy can be calculated from precursor molarity and band gap energy of undoped ZnO thin films; the ZnO exhibit a single crystals exhibit n-type semiconductor with a high crystallinity.…”
Section: Tablementioning
confidence: 99%
“…The films were deposited at a substrate temperature of 350 • C. The optical properties of undoped ZnO thin film such a band gap energy and the Urbach energy were obtained from our previous paper [21], and various papers [22][23][24][25][26][27][28][29][30]; they have studied the effect of substrate temperature and precursor molarity on the structural and the optical properties of undoped ZnO thin films, these results are shown in Table 1 In this study, we will show the evolution of the precursor molarity on the Urbach energy and band gap energy, we tried to establish correlations for each model proposed. In our calculations, the Urbach energy can be calculated from precursor molarity and band gap energy of undoped ZnO thin films; the ZnO exhibit a single crystals exhibit n-type semiconductor with a high crystallinity.…”
Section: Tablementioning
confidence: 99%
“…In this study, the undoped and doped ZnO samples were deposited on glass substrates using the ultrasonic spray and spray pyrolysis techniques. In general, the depositions were performed at a substrate temperature of 350 ∘ C. The optical band gap energy and the Urbach energy of undoped and Bi, Sn and Fe doped ZnO thin films were taken from the literature [28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43][44], which studied the effect of precursor molarity, doping level and substrate temperature on structural, electrical and optical properties of undoped and doped ZnO thin films with Bi, Sn and Fe. Table 1 shows the typical procedures of experimental research designs, which used zinc as a precursor.…”
Section: Experimental and Methodsmentioning
confidence: 99%
“…This meant both of thin film could absorb uv-light and visible light. Band gap energy of TiO2 thin film can be determined by plotting the absorption coefficient to the photon energy using Equation (1) [22]. (1) where α is absorption coefficient, A is constant, hυ is photon energy, and Eg is band gap energy.…”
Section: Optical Propertiesmentioning
confidence: 99%
“…(1) where α is absorption coefficient, A is constant, hυ is photon energy, and Eg is band gap energy. , 11 (3), 2016, 371 Copyright © 2016, BCREC, ISSN 1978-2993 Absorption coefficient α can be determined using Equation (2) [22]. (2) where A and d are absorbance and thickness film, respectively.…”
Section: Optical Propertiesmentioning
confidence: 99%