The structural dependence of the effective mass and Luttinger parameters in semiconductor quantum wells

Long, Fei; Hagston, W. E.; Harrison, P.; Stirner, T.

doi:10.1063/1.365657

Cited by 42 publications

(16 citation statements)

References 48 publications

(51 reference statements)

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“…In addition, quantum confinement may arise in films with thicknesses less than 10 nm, as they do in semiconductor quantum wells, and may also lead to modification of the effective mass. Such effects may also explain the deviation in the optical properties experienced for thicknesses below 4 nm, although further investigations are required to quantify the role quantum effects play in ultrathin TiN films. Furthermore, the small lattice mismatch between MgO (4.21 Å) and TiN (4.24 Å) invariably introduces strain into the TiN films which would result in a modified effective mass.…”

Section: Resultsmentioning

confidence: 99%

Optical Properties of Plasmonic Ultrathin TiN Films

Shah

Reddy

Kinsey

et al. 2017

Advanced Optical Materials

103

101

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Theoretical studies have been conducted to comprehend these characteristics in ultrathin gold films. [6,7] However, the fabrication of such thin films is generally quite difficult. For conventional plasmonic metals, such as silver and gold, continuous, smooth films with thicknesses lower than 10 nm are challenging to produce because of island formation and large defect concentrations which result from their high surface energy. [8][9][10] On the other hand, transition metal nitrides (TiN, ZrN, etc.) can be grown epitaxially on substrates such as c-sapphire and MgO, [11] enabling the formation of continuous ultrathin films down to 2 nm while maintaining high quality. [12] These materials have gained much interest for plasmonic applications for the visible and near-infrared region due to their tailorable optical properties and refractory quality. [13] TiN has already been shown to have potential applications in photovoltaics, [14,15] waveguiding, [16] modulators, [17,18] and nonlinear optical devices. [3,19] Although some of these devices use films of ≈10 nm, there is additional interest in the formation of ultrathin metallic films (<10 nm) which may facilitate additional applications. To support this, there have been efforts to grow ultrathin TiN films using atomic layer deposition (ALD). However, these films become dielectric below 5 nm and may not be useful for nanophotonic applications. [20] This is because TiN thin films grown using ALD with a TiCl 4 precursor are more prone to Cl impurities, which could result in a degradation of the metallic properties in thinner films. [21][22][23] In the present study, we have grown continuous, epitaxial, ultrathin TiN films that remain plasmonic in the optical range via DC reactive magnetron sputtering. Using sputtering to grow the film decreases the chance of contamination since only Ti, N, and Ar are introduced into the system, which helps maintain the metallic properties in ultrathin films. The dielectric permittivity of these films was extracted using spectroscopic ellipsometry, while Hall measurements give further insight into the optical behavior of the films. Results and DiscussionUltrathin TiN films with thicknesses of 2, 4, 6, 8, and 10 nm were grown on MgO using DC reactive magnetron sputtering. Due to the lattice matching between TiN (4.24 Å) and substrates such as MgO (4.21 Å) and sapphire (4.76 Å), high quality,Overcoming the challenge of growing ultrathin metallic films is of great importance for practical applications of nanoplasmonic structures. In the present work, epitaxial, ultrathin (<10 nm) films of plasmonic TiN are grown on MgO using DC reactive magnetron sputtering. The optical properties of the films are studied through variable angle spectroscopic ellipsometry and Hall measurements. As the film thickness decreases, they become less metallic and exhibit higher loss while still remaining plasmonic in the optical range. These trends are related to the decreasing carrier concentration in the thinner films and increased scattering, respectively. Howev...

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Section: Resultsmentioning

confidence: 99%

Optical Properties of Plasmonic Ultrathin TiN Films

Shah

Reddy

Kinsey

et al. 2017

Advanced Optical Materials

103

101

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“…In principle, the latter would now enable one to make predictions with regard to the validity of the effective mass scheme, via the observation of the zero-field transition energy, given that all other parameters are known accurately. However, the additional uncertainties in the values of the in-plane effective masses and the recently reported well-width dependence of the effective masses [14] may lead to further complications in achieving this aim.…”

Section: Resultsmentioning

confidence: 98%

Application of pseudopotential theory to magnetic semiconductor heterostructures

Stirner

Long

Hagston

2001

Superlattices and Microstructures

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“…There exist many parameters which affect on the effective mass of carriers in the CdTe-Cd 1−x Mn x Te MQWs, such as growth direction, well width, strain, polaron effect due to the electron-phonon interaction [19,20]. Equations (13) and (14) give only the dependence of the effective mass to composition and the effect of the other parameters is ignored.…”

Section: Resultsmentioning

confidence: 99%

The Magneto-Optical Response of Diluted Magnetic Semiconductor CdTe-Cd_1-xMn_xTe Multi Quantum Wells in the Voigt Configuration

Hidari

Shayesteh

2009

Acta Phys. Pol. A

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We have calculated the s-and p-polarized far infrared magnetoplasmon spectra of doped CdTe-Cd1−xMnxTe multi quantum wells in the presence of a static magnetic field up to 20 T parallel to the surface of the layers using a macroscopic model based on effective medium theory, using a novel approach which gives a good account of the data together with a clear physical interpretation of the various spectral features, such as the free carrier and optical phonon properties. The results show that the transverse optical modes (for the whole composition range, x = 0 to 1) are sensitive and change linearly with respect to the composition parameter. In p-polarized reflectivity the cyclotron resonance experiences a blue shift when the magnetic field strength increases. Also, the analysis of the dielectric tensor function and the Voigt dielectric function is used to determine the carriers' cyclotron effective masses (for both holes and electrons) as a function of composition. Furthermore, a modified random element iso-displacement approach has been extended for the multi layers to analyze the influence of the composition on the optical phonon response in the barrier layer.

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The structural dependence of the effective mass and Luttinger parameters in semiconductor quantum wells

Cited by 42 publications

References 48 publications

Optical Properties of Plasmonic Ultrathin TiN Films

Optical Properties of Plasmonic Ultrathin TiN Films

Application of pseudopotential theory to magnetic semiconductor heterostructures

The Magneto-Optical Response of Diluted Magnetic Semiconductor CdTe-Cd_1-xMn_xTe Multi Quantum Wells in the Voigt Configuration

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The structural dependence of the effective mass and Luttinger parameters in semiconductor quantum wells

Cited by 42 publications

References 48 publications

Optical Properties of Plasmonic Ultrathin TiN Films

Optical Properties of Plasmonic Ultrathin TiN Films

Application of pseudopotential theory to magnetic semiconductor heterostructures

The Magneto-Optical Response of Diluted Magnetic Semiconductor CdTe-Cd1-xMnxTe Multi Quantum Wells in the Voigt Configuration

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The Magneto-Optical Response of Diluted Magnetic Semiconductor CdTe-Cd_1-xMn_xTe Multi Quantum Wells in the Voigt Configuration