1999
DOI: 10.1007/s11664-999-0228-2
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The structural changes in CdS-CdTe thin films due to annealing

Abstract: Thin film solar cells based upon CdS-CdTe heterojunctions have become an important alternative to silicon based devices. The film structures formed during fabrication are critical to cell efficiency and thus their study is fundamental to improving device performance. We have used synchrotron x-ray diffraction to investigate the effect of a post deposition anneal upon the film structures and, in particular, have examined the dynamic formation of intermixed regions adjacent to the original, metallurgical interfa… Show more

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Cited by 23 publications
(9 citation statements)
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“…For the virgin samples, the value of a as-deposited ¼ 6:485 ( A which is larger than the powder (free of stress) sample a powder ¼ 6:481 ( A, and this suggests that the film is submitted to a compressive stress in the plane parallel to the substrate surface. In the case of annealed sample, the lattice parameter a treated ¼ 6:479 ( A, and similar results are reported in the literature [2][3][4][5][6]. The error in our estimation of the lattice parameter is 70.003 ( A.…”
Section: Lattice Parametersupporting
confidence: 86%
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“…For the virgin samples, the value of a as-deposited ¼ 6:485 ( A which is larger than the powder (free of stress) sample a powder ¼ 6:481 ( A, and this suggests that the film is submitted to a compressive stress in the plane parallel to the substrate surface. In the case of annealed sample, the lattice parameter a treated ¼ 6:479 ( A, and similar results are reported in the literature [2][3][4][5][6]. The error in our estimation of the lattice parameter is 70.003 ( A.…”
Section: Lattice Parametersupporting
confidence: 86%
“…Even though there are changes in the intensity of the various peaks due to annealing, the samples continue to show a preference for the (1 1 1) direction in each stage of the annealing process. Many authors have been reported changes in XRD patterns due to annealing in different environments [2][3][4][5][6].…”
Section: X-ray Diffraction Patternmentioning
confidence: 99%
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“…concluded that the S-Te inter-diffusion occurred during the higher temperature CdTe deposition rather than lower temperature CdCl 2 processing. Rogers et al (1999) suggested that sulfur diffusion into CdTe occurs in a region delimited by a change in CdTe microstructure. According to our experimental data and the VASE analysis, we propose that a large amount of S-Te inter-diffusion occurred during high temperature process of CdTe deposition.…”
Section: Resultsmentioning
confidence: 99%