The structural and interfacial properties of HfO2/Si by the plasma oxidation of sputtered metallic Hf thin films

He, Guo‐Zhong; Fang, Q.; Liu, M; Zhu, Liqiang; Zhang, L.D

doi:10.1016/j.jcrysgro.2004.05.038

Cited by 57 publications

(19 citation statements)

References 24 publications

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“…The intensity of the absorption band increases after the post deposition annealing, indicating that the formation of the interfacial Si-oxide layer associates with the annealing temperature. What's more, the peak of Si-O stretching mode demonstrates an apparent red shift with the increase in annealing temperature, implying the possibility of formation of silicates [27].…”

Section: Resultsmentioning

confidence: 94%

Annealing temperature dependence on the structural and optical properties of sputtering-grown high-k HfO2 gate dielectrics

Deng

Chen

et al. 2014

J Mater Sci: Mater Electron

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High-k gate dielectric HfO 2 thin films have been deposited on Si and quartz substrates by radio frequency magnetron sputtering. The structural characteristics, surface morphology, and optical properties of the HfO 2 /Si gate stacks at various post-annealing temperatures were examined by X-ray diffraction (XRD), atomic force microscopy (AFM), fourier transform infrared spectroscopy (FTIR), ultraviolet-visible spectroscopy (UV-Vis spectroscopy), and spectroscopic ellipsometry (SE). XRD measurement indicates that the 80 W-deposited HfO 2 films demonstrate a polycrystalline structure. AFM measurements illustrate that the root mean square of the HfO 2 thin films demonstrates an apparent increase with increasing the annealing temperature. Analysis from FTIR indicates that the Si-O-Si bonds vibration peak position shift toward lower wave numbers with increasing the annealing temperature. Combined with UV-Vis spectroscopy and SE measurements, it can be noted reduction in band gap with an increase in annealing temperature has been confirmed. Additionally, increase in refractive index (n) has been confirmed by SE.

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Section: Resultsmentioning

confidence: 94%

Annealing temperature dependence on the structural and optical properties of sputtering-grown high-k HfO2 gate dielectrics

Deng

Chen

et al. 2014

J Mater Sci: Mater Electron

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“…In LSI processes, HfO 2 is deposited either by physical vapor deposition (PVD) such as sputtering [2], chemical vapor deposition (CVD) [1], oxidation of Hf metals [10], or by atomic layer deposition (ALD) [11][12][13][14]. In many cases, HfO 2 forms monoclinic phase just after the deposition process.…”

Section: Dielectric Constant and Microscopic Polarizationmentioning

confidence: 99%

“…In many cases, HfO 2 forms monoclinic phase just after the deposition process. Even in the case in which it has amorphous phase after deposition, low-temperature annealing transforms the material to polycrystalline monoclinic HfO 2 [10].…”

Section: Dielectric Constant and Microscopic Polarizationmentioning

confidence: 99%

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Hafnium-Based Gate Dielectric Materials

Nishiyama

2013

High Permittivity Gate Dielectric Materials

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In this chapter, we focus on hafnium-based gate dielectrics. HfO 2 is regarded as the most promising material for the high-k gate dielectrics owing to its large dielectric constant and large band-gap energy. In the first part of this chapter, these characteristics are addressed in a comparison with SiO 2 and other high-k materials. Thermal stability is a major issue for the application of high-k materials to MOSFETs in LSIs. Although HfO 2 satisfies this requirement, severer process conditions may cause problems even with this material. Suppression of these issues is also addressed in the second part of this chapter. In order to enhance the characteristics of HfO 2 , transformation of the monoclinic phase to the tetragonal and the cubic phases with larger dielectric constant has been pursued recently. We mention the issue in the last part of this chapter. Introductory Remarks and Brief Outline of the ChapterSince the proposal of the materials in the early 2000s [1-3], hafnium-based gate dielectrics have been regarded as the most promising materials for the application to large scale integrations (LSIs). In 2007, Intel announced the start of manufacturing of 45 nm-node LSIs with high-k/metal gate stack, with the remark that the world's first high-k material in commercial production was hafnium-based [4].There are several characteristics that the high-k materials should meet for the application to metal oxide semiconductor field effect transistors (MOSFETs) in LSIs. First, we clarify the properties so that readers can understand their A. Nishiyama

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“…Recently, refractory metal oxides such as HfO 2 and ZrO 2 have been reported to be a promising candidate for high-k gate insulator films for the fabrication of scaled-down metal-oxide-semiconductor field effect transistor (MOS-FET) devices, due to their high dielectric constants and thermodynamic high stability on Si surface. 1,2) Then, high purity Hf metal as a sputtering target material will be required to improve the reliability and the lifetime of devices. For instance, some trace impurities may cause an increase in the gate leakage current, due to those oxides in HfO 2 being reduced to metals by Si.…”

Section: Introductionmentioning

confidence: 99%

Purification of Hafnium by Hydrogen Plasma Arc Melting

2011

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Purification of two kinds of Hf metal, a high-purity Hf (HP-Hf) with 99.7 mass% and a low-purity Hf (LP-Hf) with 98 mass%, by hydrogen plasma arc melting (HPAM) has been carried out and the removal behavior of various impurity elements has been examined. Many metallic impurities (Fe, Al, Cr, Cu, Mn, Sn, Ti etc.) in the melted Hf, with higher vapor pressures than that of Hf, were removed to the very low levels by vaporization during HPAM and their removal rates increased with the hydrogen content of plasma arc. Then, the purity (except for Zr, O, N and C) of LP-Hf and HP-Hf were improved to nearly 99.998% and above 99.999%, respectively, after 60 min of 20%H 2 +Ar plasma arc melting. For the removal of Fe, Al, Cu and Ti from Hf, the refining effect of HPAM under atmospheric pressure was found to be superior to that of EBM under high vacuum. Therefore, HPAM has been confirmed to be a very useful method for the purification of Hf and the dissociated and activated hydrogen atoms formed in the high temperature plasma arc must play an important role for the unique refining process of HPAM.

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The structural and interfacial properties of HfO2/Si by the plasma oxidation of sputtered metallic Hf thin films

Cited by 57 publications

References 24 publications

Annealing temperature dependence on the structural and optical properties of sputtering-grown high-k HfO2 gate dielectrics

Annealing temperature dependence on the structural and optical properties of sputtering-grown high-k HfO2 gate dielectrics

Hafnium-Based Gate Dielectric Materials

Purification of Hafnium by Hydrogen Plasma Arc Melting

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