The structural and in-plane dielectric/ferroelectric properties of the epitaxial (Ba, Sr)(Zr, Ti)O3 thin films

Abstract

Epitaxial (Ba 1-x Sr x)(Zr 0.1 Ti 0.9)O 3 (BSZT, x ¼ 0-0.45) thin films were deposited on (LaAlO 3) 0.3 (Sr 2 AlTaO 6) 0.35 (LSAT) substrates by pulsed laser deposition. The experimental results demonstrate that the structural, dielectric, and ferroelectric properties of the BSZT thin films were greatly dependent on the strontium content. The BSZT thin films transformed from tetragonal to cubic phase when x ! 0.35 at room temperature. The Curie temperature and room-temperature remnant polarization decrease with increasing strontium concentration. The optimal dielectric properties were found in (Ba 0.55 Sr 0.45)(Zr 0.1 Ti 0.9)O 3 thin films which is in paraelectric state, having tunability of 47% and loss tangent of 0.0338 under an electric field of 20 MV/m at 1 MHz. This suggests that BSZT thin film is a promising candidate for tunable microwave device applications.

A Case of Esophageal Duplication Cyst Identified on Cardiac Point-of-Care Ultrasound

“…Symptoms can be gastrointestinal (dysphagia, epigastric, or retrosternal pain) or respiratory (cough, stridor, and wheezing) and are caused by compression of other mediastinal structures 12 . Imaging modalities to diagnose esophageal duplication cysts include computerized tomography, MRI, barium esophagram, and endoscopic ultrasound 11,13 . To our knowledge, diagnosis with cardiac POCUS has not previously been described in the literature.…”

“…To our knowledge, diagnosis with cardiac POCUS has not previously been described in the literature. Complications of esophageal duplication cysts include gastrointestinal obstruction, hemorrhage, cyst rupture, infection, and malignancy 13 . Surgical resection is the treatment of choice for symptomatic patients 14 …”

Capacitance Properties in Ba0.3Sr0.7Zr0.18Ti0.82O3 Thin Films on Silicon Substrate for Thin Film Capacitor Applications

“…Compared with STO films, the Ba 1−x Sr x TiO 3 (BST) thin films have a higher dielectric constant, which has currently become very attractive for higher integration of thin film capacitors. However, electronic hopping between Ti 4+ and Ti 3+ ions makes the BST thin films have a low electric breakdown strength (hardly exceeding 0.8 MV/cm) [12,13]. For this reason, Ba x Sr 1−x Zr y Ti 1−y O 3 (BSZT) ceramics are thus fabricated by the substitution of Zr 4+ for Ti 4+ in BST ceramics [14].…”

“…Therefore, the BSZT thin films could be a promising dielectric thin film as an alternative to the BST or STO thin films for the high-frequency capacitors, coupling and decoupling capacitors. Thus far, the perovskite BSZT thin films are prepared by using pulse laser deposition (PLD) and Sol-Gel processing [13,[15][16][17][18][19]. Radio frequency (RF) magnetron sputtering method is widely used in the preparation of advanced functional thin films; it is especially flexible in preparing high-quality oxide thin films with a large area.…”

“…Radio frequency (RF) magnetron sputtering method is widely used in the preparation of advanced functional thin films; it is especially flexible in preparing high-quality oxide thin films with a large area. Based on our best knowledge, there are few reports in the literature to prepare the perovskite BSZT thin films [13,[15][16][17][18][19] thin films exhibit para-electric behavior above that temperature. Its capacitance properties were systematically characterized as a function of frequency, voltage, and temperature.…”