The state of the art of Sb₂(S, Se)₃ thin film solar cells: current progress and future prospect

Abstract

In this work, a review focused on the recent development of antimony sulfide selenide (Sb2(S,Se)3) solar cells is presented. In particular, experimental and theoretical results are discussed to understand the current limiting factors of this technology, as well as possible routes for device promotion. The Sb2(S,Se)3 compound is introduced as an attractive compound for single junction and multijunction solar cells since it is described by a band-gap that can be tailored in the range of 1.1 – 1.8 eV. Furthermore, improved transport properties are observed in solar cells when SnO2:F is used as substrate due to better ribbons orientation. In addition, defect energy levels in the range of 0.49 – 0.52 eV and 0.69 – 0.81 eV associated to VSb and SeSb (or SSb), respectively, result in carrier lifetime values in the range of 0.1 – 67 ns. It is demonstrated that, unlike other semiconductor compounds, temperatures lower than 450 °C are required for Sb2(S,Se)3 processing. Moreover, the highest solar cell efficiency of 10.7 % has been reported by the hydrothermal method. Although Sb2(S,Se)3 is a stable compound, it is found that there are some instability problems concerning solar cells due to the use of the Spiro-OMeTAD as the hole transport layer. Finally, theoretical results show that interface defects are the main reason for low experimental efficiencies. In particular, losses at the CdS/Sb2(S,Se)3 interface are introduced as dominant. In this sense, the introduction of Zn to the CdS compound is presented as a potential solution, which can result in higher solar cell efficiencies along with the reduction of Cd concentration.

Investigating the Effect of Nonideal Conditions on the Performance of a Planar Sb2Se3-Based Solar Cell through SCAPS-1D Simulation

“…10 Because of its environmental friendliness and high absorption coefficient (10 5 cm −1 ), antimony triselenide (Sb 2 Se 3 ) has become a particularly attractive light absorber for solar cells in recent years. 11 In accordance with the Shockley−Queisser limit, the maximal PCE of a single-junction Sb 2 S 3 solar cell can achieve 28.64%, pending its large band gap (1.7 eV). 12 Consequently, it is a potential candidate for tandem solar cell utilization.…”

“…Sb 2 Se 3 -based solar cells have indicated better performance since dominant efficiency values of 3.21 and 2.26% (laboratory scale) were achieved in 2014 . Because of its environmental friendliness and high absorption coefficient (10 5 cm –1 ), antimony triselenide (Sb 2 Se 3 ) has become a particularly attractive light absorber for solar cells in recent years . In accordance with the Shockley–Queisser limit, the maximal PCE of a single-junction Sb 2 S 3 solar cell can achieve 28.64%, pending its large band gap (1.7 eV) .…”

Comparison of Thin Film Sb 2 Se 3 Solar Cell Device Parameters: with Different Electron Transport Layer

“…Numerical solutions of basic semiconductor equations can be solved using SCAPS-1D software, which shows the performance parameters of the Sb 2 Se 3 solar cell [37][38][39]. The SCAPS-1D continuity equation and Poisson equation must be solved for minority charge carriers (i.e., holes and electrons) to understand the Sb2Se3 solar cell device better.…”

Analysis of Hole Transport Layer and Electron Transport Layer Materials in the Efficiency Improvement of Sb2(Se1−xSx)3 Solar Cell

“…On the other hand, previous works have shown that major important problems concerning FTO/CdS/Sb 2 (Se 1-x S x ) 3 / Spiro-OMeTAD/Au solar cells are the formation of defects at CdS (ETL)/Sb 2 (S,Se) 3 and Spiro-OMeTAD (HTL)/Sb 2 (S,Se) 3 interfaces, resulting in charge carrier losses. [18,19] In this sense, new ETL and HTL materials that result in lower defect formation at interfaces as well as better band alignment for carrier transport are needed to promote Sb 2 (S,Se) 3 -based solar cell efficiency.…”