Abstract:FIG. 2. Light-induced modification of the electronic structure. a,b Snapshots of the trARPES spectra along the kx momentum direction and for kz = 0 Å−1 . The data have been measured at 11 K with a probe photon energy of 10.75 eV and an absorbed pump fluence of 0.4 mJ/cm 2 . (a) Snapshot before photoexcitation (t < 0). At the Γ point of the Brillouin zone (kx = 0 Å−1 ), the flat anti-bonding VB is located around -0.16 eV, whereas the bonding VB appears around -0.65 eV. (b) Snapshot measured at the maximum of th… Show more
“…EI results from a proliferation of excitons driven by Coulomb attraction between electrons and holes in a semiconductor or a semimetal [25][26][27][28][29]. Ta 2 NiSe 5 exhibits a phase transition at T c = 328 K; while the pronounced changes in band structure [18], transport [19] and optical [30] properties are consistent with the ones expected for an EI, they allow an alternative interpretation in terms of a purely structural phase transition [31][32][33]. Indeed, EI state in Ta 2 NiSe 5 is expected to break mirror symmetries of the lattice due to the distinct symmetries of the electron and hole states forming the exciton [34], similar to a structural transition [31].…”
We study the electronic phase diagram of the excitonic insulator candidates Ta2Ni(Se1−xSx)5 [x=0, ... ,1] using Raman spectroscopy. Critical excitonic fluctuations are observed, that diminish with x and ultimately shift to high energies, characteristic of a quantum phase transition. Nonetheless, a symmetry-breaking transition at finite temperatures is detected for all x, exposing a cooperating lattice instability that takes over for large x. Our study reveals a failed excitonic quantum phase transition, masked by a preemptive structural order.
“…EI results from a proliferation of excitons driven by Coulomb attraction between electrons and holes in a semiconductor or a semimetal [25][26][27][28][29]. Ta 2 NiSe 5 exhibits a phase transition at T c = 328 K; while the pronounced changes in band structure [18], transport [19] and optical [30] properties are consistent with the ones expected for an EI, they allow an alternative interpretation in terms of a purely structural phase transition [31][32][33]. Indeed, EI state in Ta 2 NiSe 5 is expected to break mirror symmetries of the lattice due to the distinct symmetries of the electron and hole states forming the exciton [34], similar to a structural transition [31].…”
We study the electronic phase diagram of the excitonic insulator candidates Ta2Ni(Se1−xSx)5 [x=0, ... ,1] using Raman spectroscopy. Critical excitonic fluctuations are observed, that diminish with x and ultimately shift to high energies, characteristic of a quantum phase transition. Nonetheless, a symmetry-breaking transition at finite temperatures is detected for all x, exposing a cooperating lattice instability that takes over for large x. Our study reveals a failed excitonic quantum phase transition, masked by a preemptive structural order.
“…First, the sensitivity of the gap renormalization dynamics to the position in the BEC-BCS crossover may explain the apparent contradiction between theory and experiment in Fig. 3(k), as well as various TR-ARPES experiments which showed a wide range of responses, including gap reductions [39,40,57], gap enhancements [13] and rigid gap shifts [12]. Second, the contradiction between equilibrium ARPES results, suggesting a BCS nature of the ground state, and the transient gap enhancement observed in TRARPES remains, an open question.…”
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confidence: 97%
“…In the semimetallic case, the phase transition is described as a binding of weakly interacting electron-hole pairs [5,7] in analogy to the binding of electron-electron pairs described in the Bardeen-Cooper-Schrieffer (BCS) theory of superconductivity. However, in solid state systems, an EI is typically strongly coupled to lattice degrees of freedom and the interplay between electronic and electron-phonon interactions is a recurrent question in the field [8][9][10][11][12][13][14].…”
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confidence: 99%
“…Early equilibrium ARPES results on TNS were interpreted within a purely electronic picture [24,28,34], but subsequent additional experimental probes, including Raman [8,10,11,35] and optical spectroscopy [25,[36][37][38], have suggested a strong coupling between the EI and lattice distortions raising the question of the quantitative contribution of the electronic and lattice instabilities to the opening of the gap in TNS. To resolve this question, TR-ARPES experiments have focused on the ultrafast response of the electronic gap, reporting either a transient modulation of the gap amplitude (interpreted within an electronic picture [13,39,40]) or a rigid gap response (interpreted within a largely lattice-driven scenario [12]).…”
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confidence: 99%
“…Theoretical developments have followed a similar trajectory, where initial studies have focused on a purely excitonic description that successfully reproduced the equilibrium ARPES spectrum of TNS [28,33] and optical absorption spectra [41]. However, subsequent studies have revealed the importance of the electron-lattice coupling [12,42,43], and the interplay between electronelectron and electron-phonon contributions is currently debated with nonlinear optical responses [25,38,44], collective dynamics [26,45], and transient protocols for the order enhancement [46][47][48][49] all discussed as highlighting either the electron-electron or electron-lattice contributions to the excitonic insulator state.…”
We present a generic procedure for quantifying the interplay of electronic and lattice degrees of freedom in photo-doped insulators through a comparative analysis of theoretical many-body simulations and time-and angle-resolved photoemission spectroscopy (TR-ARPES) of the transient response of the candidate excitonic insulator Ta2NiSe5. Our analysis demonstrates that the electronelectron interactions dominate the electron-phonon ones. In particular, a detailed analysis of the TR-ARPES spectrum enables a clear separation of the dominant broadening (electronic lifetime) effects from the much smaller bandgap renormalization. Theoretical calculations show that the observed strong spectral broadening arises from the electronic scattering of the photo-excited particle-hole pairs and cannot be accounted for in a model in which electron-phonon interactions are dominant. We demonstrate that the magnitude of the weaker subdominant bandgap renormalization sensitively depends on the distance from the semiconductor/semimetal transition in the high-temperature state, which could explain apparent contradictions between various TR-ARPES experiments. The analysis presented here indicates that electron-electron interactions play a vital role (although not necessarily the sole one) in stabilizing the insulating state.
Electronic properties of various insulators can be controlled by chemical substitution. For example, exotic superconducting phases are often obtained by chemical substitution in Mott insulators. Compared to Mott insulators, impact of chemical substitution on excitonic insulators is not well explored yet. In the present work, space-resolved angle-resolved photoemission spectroscopy of the model Ta 2 Ni(Se 1-x S x ) 5 is reported in which S substitution for Se is used to control the excitonic behavior. The substitution introduces electronic inhomogeneity with the Se 4p/S 3p valence band exhibiting strong position dependence. In contrast, the flat top valence band, which is a signature of the excitonic insulating phase, does not show any appreciable position dependence except the effect of surface corrugation. This indicates that the excitonic coupling in Ta 2 NiSe 5 is robust against the electronic inhomogeneity induced by the S substitution.
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