2007
DOI: 10.1063/1.2801693
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The spin polarization of CrO2 revisited

Abstract: Here, we use Andreev reflection spectroscopy to study the spin polarization of high quality CrO2 films. We study the spin polarization as a function of growth temperature, resulting in grain size and electrical resistivity. In these films low temperature growth appears to be a necessary but not sufficient condition to guarantee the observation of high spin polarization, and this is only observed in conjunction with suppressed superconducting gap values and anomalously low interface properties. We suggest that … Show more

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Cited by 30 publications
(56 citation statements)
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“…[12][13][14][15] The mechanism behind the effect is the process of triplet Andreev reflection at the half-metal-superconductor interface. 2,4 The key ingredient that allows and influences this reflection process is provided by the magnetic properties of the interface between the half metal and the superconductor: it should have a magnetization that is misaligned from that of the half metal.…”
Section: Introductionmentioning
confidence: 99%
“…[12][13][14][15] The mechanism behind the effect is the process of triplet Andreev reflection at the half-metal-superconductor interface. 2,4 The key ingredient that allows and influences this reflection process is provided by the magnetic properties of the interface between the half metal and the superconductor: it should have a magnetization that is misaligned from that of the half metal.…”
Section: Introductionmentioning
confidence: 99%
“…A number of experimental reports have shown possible signatures of the LRSTPE [38][39][40] , although it remains to be determined what the 'signature' of the LRSTPE is in the Andreev reflection spectra. It is clear, however, from both theoretical and experimental works that if the LRSTPE can be reliably turned 'on' and 'off', changes should be observed in the parameters used to fit the spectra that indicate the subgap conductance, i.e.…”
Section: Discussionmentioning
confidence: 99%
“…16 The grain size measured by XRD increased with deposition temperature from 33nm at 330°C to 80nm at 380°C. 16 Films grown by this method have been extensively characterized [15][16][17][18] , point contact Andreev reflection measurements on the 595, 251 and 62nm films in this study were published previously, 17 confirming bulk spin polarisation of the transport carriers (P t ) close to 100% and no strong correlation with morphology.…”
mentioning
confidence: 79%