The spectral detectivity analysis of intrinsic, n-type and p-type A-SiNRs IR-photodetectors

Azad, Zahra Abbasi; Khezrabad, Mohammad Sadeq Akhoundi; Shokri, Aliasghar

doi:10.1016/j.mseb.2022.115607

Cited by 6 publications

(1 citation statement)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Furthermore, Kharadi et al [19], modeled a zigzag silicene nanoribbon (ZSiNR)based photodetector in which Li-Cl co-decorated zigzag silicene nanoribbon is used, and its performance was analyzed in terms of photoresponsivity and detectivity. Azad et al [20], have also analyzed the detectivity of ASiNR-based infrared photodetectors in an intrinsic, p-doped, and n-doped form, through density functional theory(DFT) calculation. However, a photodetector based on silicene nanoribbons in the absence of applied voltage has not been simulated or built yet.…”

Section: Introductionmentioning

confidence: 99%

Non-equilibrium Green’s function approach for simulation asymmetric source-drain silicene-based photodetectors

Alaee,

Sadeghzadeh,

Ostovari

2023

Phys. Scr.

View full text Add to dashboard Cite

Employing tight-binding approximation coupling to Non-Equilibrium Green’s Function (NEGF) approach, we have simulated three photodetectors based on 20 nm Armchair-Silicene-Nanoribbons (ASiNR) with asymmetric source (Ir-doped silicene) and drain (Cu-, Ag-, or Au-doped silicene) contacts. In this study, monochromatic illumination in the range of 0.1-10 eV with the intensity of 1kW cm-2 is used for the simulation of the photocurrent, photoresponsivity, quantum efficiency, and detectivity. It is shown that the highest peak in the photocurrent spectrum occurs at the 273 nm incident wavelength for all devices under consideration, where the Ir-Cu device has presented enhanced photodetector characteristics than Ir-Ag and Ir-Au devices. It is also found that only transitions between two subbands with the same index are allowed. Moreover, the first peak in the photocurrent spectrum is related to the main band gap of ASiNR. Additionally, the simulated dark and total currents versus source-drain voltage reveal that photocurrent caused a negative shift in the total current proportional to incident light intensity. The proposed photodetector has the advantage that it is fully compatible with established silicon technology.

show abstract

Section: Introductionmentioning

confidence: 99%