2016
DOI: 10.1093/mnras/stw2445
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The solar silicon abundance based on 3D non-LTE calculations

Abstract: We present three-dimensional (3D) non-local thermodynamic equilibrium (non-LTE) radiative transfer calculations for silicon in the solar photosphere, using an extensive model atom that includes recent, realistic neutral hydrogen collisional cross-sections. We find that photon losses in the Si i lines give rise to slightly negative non-LTE abundance corrections of the order −0.01 dex. We infer a 3D non-LTE based solar silicon abundance of lg Si = 7.51. With silicon commonly chosen to be the anchor between the p… Show more

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Cited by 70 publications
(49 citation statements)
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“…For silicon, also an important electron donor in particular for stars slightly hotter than the Sun, statistical-equilibrium calculations by Bergemann et al (2013) and Mashonkina et al (2016) suggest that the differential non-LTE effects are very small for solar-type stars (see also Nissen et al 2017). We also note that Amarsi and Asplund (2017) find small 3D effects in the solar case, using statisticalequilibrium calculations and 3D models.…”
Section: Differential Analysesmentioning
confidence: 54%
“…For silicon, also an important electron donor in particular for stars slightly hotter than the Sun, statistical-equilibrium calculations by Bergemann et al (2013) and Mashonkina et al (2016) suggest that the differential non-LTE effects are very small for solar-type stars (see also Nissen et al 2017). We also note that Amarsi and Asplund (2017) find small 3D effects in the solar case, using statisticalequilibrium calculations and 3D models.…”
Section: Differential Analysesmentioning
confidence: 54%
“…This code is originally based on the code multi3d (Botnen & Carlsson 1999;Leenaarts & Carlsson 2009), but with our own customisations (e.g. Amarsi et al 2016a,b;Amarsi & Asplund 2017). We provide a brief overview of the code here.…”
Section: Post-processing Line Formation Calculationsmentioning
confidence: 99%
“…comm. ), where the radiative transfer code and model atom were presented in Amarsi & Asplund (2017). The average differential 3D NLTE abundance correction for Si is ≈ −0.001 dex.…”
Section: Differential Elemental Abundancesmentioning
confidence: 99%