The Soft $\hbox{Punchthrough}+$ Superjunction Insulated Gate Bipolar Transistor: A High Speed Structure With Enhanced Electron Injection

Antoniou, Marina; Udrea, F.; Bauer, F.; Nistor, I.

doi:10.1109/ted.2010.2101076

Cited by 52 publications

(23 citation statements)

References 11 publications

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“…For both devices, breakdown occurs at the n+ injector layer at the cathode, but the presence of the SJ pillars alters the electric field distribution such that a larger voltage can be supported for a given device thickness. As a result, a SJ device can be made thinner for the same breakdown voltage to improve on-state performance, in line with previous studies [7], [9], [18]. Fig.…”

Section: Introductionsupporting

confidence: 87%

“…This study proposes applying two SJ implants, one from the cathode side and a second one from the anode side, and investigates the requirement for alignment of these pillars. This work builds upon the concepts and results as given in [7], [9], specifically for an RC-IGBT structure. Fig.…”

Section: Introductionmentioning

confidence: 98%

“…Several structures have been proposed to overcome this issue, with the majority focussing on the anode structure, but the Trench Field Stop SJ RC-IGBT (TFS-SJ-RC-IGBT) instead employs a SJ structure at the cathode and utilises traditional anode shorts to provide the reverse conduction path [6], [7]. For a TFS-SJ-RC-IGBT comparable with a CoolMOS structure, the switching losses of the proposed device are lower than a standard RC-IGBT but a snapback is present in the I-V characteristic [6], [7]. The diode reverse recovery characteristic was unaffected by the SJ structure [8].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor

Findlay

Udrea

Antoniou

2019

IEEE Electron Device Lett.

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This letter presents the Dual Implant SuperJunction (SJ) trench Reverse-Conducting (RC) Insulated Gate Bipolar Transistor (IGBT) concept with two implanted SJ pillars in the drift region; one from the cathode side and another from the anode side. The proposed device is compatible with current manufacturing processes and enables a full SJ structure to be achieved in a 1.2kV device as alignment between the pillars is not required. Extensive Technology Computer Aided Design (TCAD) simulations have been performed and demonstrated that utilising this dual implantation technique can result in a 77% reduction in turn-off losses for a full SJ structure, compared to a conventional RC-IGBT. The results show that any snapback in the on-state waveform significantly increases the turn-off losses and only a deep SJ device (pillar gap < 10μm) warrants the additional processing expense. 

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Section: Introductionsupporting

confidence: 87%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor

Findlay

Udrea

Antoniou

2019

IEEE Electron Device Lett.

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“…Previously the authors have reported on the advantages of the utilization of the SuperJunction technology in the IGBT structure [10] where the drift region is composed of alternating p and n-layers extending towards the anode of the device. In the semi-SJ IGBT structure depicted in Fig.…”

Section: Device Structurementioning

confidence: 99%

Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

Antoniou

Lophitis

Bauer

et al. 2015

IEEE Electron Device Lett.

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“…Over the last years, the IGBT performance is improved significantly with the application of various new technologies [4][5][6][7][8][9][10][11] . Although the trench concept was considered as the only possibility to obtain a high performance IGBT, considering the high reliability performance of the planar gate structure, the planar gate IGBT is still treated as a main option for the high voltage applications.…”

Section: Introductionmentioning

confidence: 99%

A novel high performance enhanced-planar IGBT with P-type buried layer

Zhang

Xia

et al. 2013

2013 International Conference on Communications, Circuits and Systems (ICCCAS)

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A novel high performance enhanced-planar IGBT with p-type buried layer (PBL-EPIGBT) is proposed in this paper. The p-type buried layer (PBL) is placed outside the n-type carrier stored (N-CS) layer and encompasses it partially. Compatible with the conventional EPIGBT technology, the PBL of the proposed structure can be formed by ion implantation and diffusion before the formation of the N-CS layer. Since additional bulk electric field modulation introduced from the charges in the PBL, the negative impact of the positive charges in the N-CS layer on the breakdown voltage (BV) is addressed effectively. The proposed structure breaks the limitation of the doping concentration of the N-CS layer (N N-CS ) on the BV and hence, a higher N N-CS can be used for the proposed PBL-EPIGBT structure with almost constant BV. As a result, in comparison with the conventional EPIGBT without a PBL, the novel structure offers not only high BV, but also improved E off -V ce(on) trade-off characteristics.

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The Soft $\hbox{Punchthrough}+$ Superjunction Insulated Gate Bipolar Transistor: A High Speed Structure With Enhanced Electron Injection

Cited by 52 publications

References 11 publications

Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor

Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor

Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

A novel high performance enhanced-planar IGBT with P-type buried layer

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