The single-phase multiferroic oxides: from bulk to thin film

Prellier, W.; Singh, Maninder; Murugavel, P.

doi:10.1088/0953-8984/17/48/c01

Cited by 72 publications

(43 citation statements)

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“…2 The recent interest in multiferroics is fueled both by the potential device applications and questions about the underlying physical principles leading to multiferroism. [3][4][5][6][7] Bulk multiferroic materials are rare, possibly due to conflicting requirements for ferromagnetism (FM) and ferroelectricity (FE). BiMnO 3 is perhaps the most fundamental multiferroic and has been referred to as the "hydrogen atom" of multiferroics.…”

Section: Pacs Numbers: Valid Pacs Appear Herementioning

confidence: 99%

Growth and characterization of multiferroic BiMnO3 thin films

Jeen

Singh‐Bhalla

Mickel

et al. 2011

Journal of Applied Physics

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We have grown epitaxial thin films of multiferroic BiMnO 3 using pulsed laser deposition. The films were grown on SrTiO 3 (001) substrates by ablating a Bi-rich target. Using x-ray diffraction we confirmed that the films were epitaxial and the stoichiometry of the films was confirmed using Auger electron spectroscopy. The films have a ferromagnetic Curie temperature (T C ) of 85±5 K and a saturation magnetization of 1 µ B /Mn. The electric polarization as a function of electric field (P − E) was measured using an interdigital capacitance geometry. The P − E plot shows a clear hysteresis that confirms the multiferroic nature of the thin films.PACS numbers: Valid pacs appear here Multiferroic materials are unique in that they exhibit both ferromagnetism and ferroelectricity simultaneously. 1 Such materials may be used to fabricate devices such as magnetic tunnel junctions with electrically tunable tunneling magnetoresistance and multiple state memory elements. 2 The recent interest in multiferroics is fueled both by the potential device applications and questions about the underlying physical principles leading to multiferroism. 3-7 Bulk multiferroic materials are rare, possibly due to conflicting requirements for ferromagnetism (FM) and ferroelectricity (FE). BiMnO 3 is perhaps the most fundamental multiferroic and has been referred to as the "hydrogen atom" of multiferroics. 8 In BiMnO 3 (BMO), as in BiFeO 3 , the 6s 2 lone pair on the Bi-ion leads to the displacement of that ion from the centrosymmetric position at the A-site of a perovskite unit cell. The resultant distortion leads to an FM interaction between the Mn-ions at the B-site in BMO. 9,10 In bulk form BMO has been observed to be both FM and FE. 11 Polycrystalline BMO can be grown under high pressure and within a very narrow range of growth conditions. While thin films of BMO have been grown by various groups, few such films have shown magnetic properties similar to bulk BMO and high enough resistivities i.e. low leakage currents to allow clear measurement of FE properties. 12-14 A possible reason for the low resistivities of BMO thin films is the substrate induced strain which exacerbates the growth of a highly distorted perovskite structure. Additionally, recent electron and neutron diffraction data have cast doubt over the purported non-centrosymmetry of the BMO crystal structure 15 and centrosymmetric structures have also been predicted using density functional theory calculations 16 . Since a non-centrosymmetric crystal a) Presently at: Department of Physics, University of California, Berkeley, California 94720, USA and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA b) Also at: Nanoscience Institute of Medical and Engineering Technology, University of Florida, 32611 c) Electronic mail: amlan@phys.ufl.edu structure is essential for ferroelectricity, the observed ferroelectric behavior of BMO may be due to strain and/or ordered oxygen vacancies. 17,18 BMO has a distorted perovskite-type structure ...

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Section: Pacs Numbers: Valid Pacs Appear Herementioning

confidence: 99%

Growth and characterization of multiferroic BiMnO3 thin films

Jeen

Singh‐Bhalla

Mickel

et al. 2011

Journal of Applied Physics

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“…[1][2][3][4][5][6][7][8] In the recent past there has been a renaissance in research on multiferroic systems primarily due to two reasons; the discovery of improper ferroelctricity in spin frustrated systems [9][10][11] and the observation of strain induced enhancement in ferroelectric Curie temperature and polarization in thin films of complex oxides. [12][13][14][15] Both these developments enable potential applications of multiferroic materials in information storage and spintronics such as magneto-electric sensors, magneto-capacitive devices, and electrically driven magnetic data storage.…”

Section: Introductionmentioning

confidence: 99%

Effect of epitaxial strain on the magneto-electric coupling of YMnO3 thin films

Singh

Snure

Tiwari

et al. 2009

Journal of Applied Physics

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We report synthesis of phase pure multiferroic YMnO 3 thin films on sapphire (0001) with conducting ZnGaO buffer contact layer. Films were prepared by using pulsed laser deposition technique and characterized using x-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive absorption spectroscopy (EDAX) and magnetic field dependent dielectric measurement techniques. Structural characterizations indicated phase purity and epitaxial nature of the films. The dielectric response indicated an anomaly in dielectric constant ε and tanδ in the vicinity of 30 K, well below the bulk Néel temperature ~ 70 K. This anomaly in ε (T) and tanδ and its magnetic field dependence is explained as an influence of strain due to lattice mismatch between the substrate and YMnO 3 film. A substantial enhancement in magnetocapacitance was also observed for magnetic field applied parallel to ab plane of the film. Our results show that it is possible to tune the multiferroic property of YMnO 3 via changes in ferroelastic route.2

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“…Recent thrust on developing multifunctional for high performance solid state device applications is a driving force to work on multiferroics materials (Eerenstein et al 2006;Spaldin and Fiebig 2005;Prellier et al 2005). Multiferroic materials that combine spontaneous magnetization (M S ) with ferroelectric polarization (P S ) are of tremendous technological and fundamental interest.…”

Section: Introductionmentioning

confidence: 99%

“…), these materials have received a considerable attention for various multifunctional devices such as multiple-state memory elements, electric field controlled ferromagnetic resonance devices, transducers, spintronics and terahertz radiation etc. (Eerenstein et al 2006;Prellier et al 2005). Due to the mutual exclusiveness of ferroelectric and ferromagnetic ordering, there are only a few single-phase mutiferroic materials such as BiFeO 3 , BiMnO 3 , etc.…”

Section: Introductionmentioning

confidence: 99%

“…Due to the mutual exclusiveness of ferroelectric and ferromagnetic ordering, there are only a few single-phase mutiferroic materials such as BiFeO 3 , BiMnO 3 , etc. (Prellier et al 2005) available today. Unfortunately, some inherent problems and challenges, namely (1) difficult to fabricate the single-phase materials, (2) high leakage current and dielectric loss, (3) low electromagnetic coupling coefficient, (4) structural distortion and (5) low temperature phase transitions etc.…”

Section: Introductionmentioning

confidence: 99%

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Magnetoelectric properties of PbZr0.53Ti0.47O3–Ni0.65Zn0.35Fe2O4 multiferroic nanocomposites

2012

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A different kind of multiferroics with ferroelectric-ferrimagnetic (FE-FM) composites: (1 -x) PbZr 0.53 Ti 0.47 O 3 -x Ni 0.65 Zn 0.35 Fe 2 O 4 with x = 0.10, 0.20 and 0.30, were synthesized by a powder-in-sol precursor hybrid processing route. Structural analysis with X-ray diffraction (XRD) data revealed the presence of both PbZr 0.53 Ti 0.47 O 3 (PZT) and Ni 0.65 Zn 0.35 Fe 2 O 4 (NZFO) pure phases in the PZT-NZFO composites. Scanning electron micrographs (SEM) clearly disclose distribution of both PZT and NZFO phases throughout the sample.Dielectric and electrical properties of the system have been investigated in a wide range of frequency at different temperatures. Dielectric constant (e r ) as a function of temperature reveals the paraelectric-FE transition temperature at *408°C having maximum value of e r at the peak [e r max = 1,200] with another low temperature anomaly at *297°C, very close to the magnetic Curie temperature of the NZFO ferrite (T c = 300°C) for the x = 0.1 FE-FM composite. The impedance spectroscopy data of these composites show clearly, contribution of both grain and grain boundary effect in the electrical properties of the composites. Negative temperature coefficient of resistance (NTCR) behavior of the materials indicates their semiconducting nature. The ac conductivity spectrum is found to obey Johnscher's power law very well. The temperaturedependent magnetization hysteresis (M-H) loops of the PZT/NZFO composite show excellent non-saturating ferrimagnetic behavior with increase in both coercive field (H c ) and remanent magnetization (M r ) when the NZFO content in the composite is increased. Polarization (P) versus electric field (E) studies at 300 K give conclusive evidence of the presence of spontaneous polarization in all the three composites (x = 0.1, 0.2 and 0.3). However, area of P-E loop, coercive field (E c ) and remanent polarization (P r ) are found to decrease noticeably with the increase of the NZFO content (x) in these composites.

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The single-phase multiferroic oxides: from bulk to thin film

Cited by 72 publications

References 0 publications

Growth and characterization of multiferroic BiMnO3 thin films

Growth and characterization of multiferroic BiMnO3 thin films

Effect of epitaxial strain on the magneto-electric coupling of YMnO3 thin films

Magnetoelectric properties of PbZr0.53Ti0.47O3–Ni0.65Zn0.35Fe2O4 multiferroic nanocomposites

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