1999
DOI: 10.1093/imamat/63.1.1
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The single-mode rate equations for semiconductor lasers with thermal effects

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Cited by 9 publications
(18 citation statements)
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“…The latter is precisely the optical time-scale identified in the isothermal lumped model of [7], the only other relevant time-scale there being an electrical one corresponding here to An, the time-scale for carrier variations. In the model discussed here we have thus identified a total of four physical time-scales: the time-scale for carrier variations ("" 1O-8 s), that for an electromagnetic wave to traverse the laser in the transverse direction ("" 1O- 13 S), that for traverse in the longitudinal direction ("" 1O-12 S) and the reciprocal of the frequency ("" 1O-15 S).…”
Section: Lasing Regionmentioning
confidence: 89%
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“…The latter is precisely the optical time-scale identified in the isothermal lumped model of [7], the only other relevant time-scale there being an electrical one corresponding here to An, the time-scale for carrier variations. In the model discussed here we have thus identified a total of four physical time-scales: the time-scale for carrier variations ("" 1O-8 s), that for an electromagnetic wave to traverse the laser in the transverse direction ("" 1O- 13 S), that for traverse in the longitudinal direction ("" 1O-12 S) and the reciprocal of the frequency ("" 1O-15 S).…”
Section: Lasing Regionmentioning
confidence: 89%
“…The generation of electron-hole pairs due to the mechanisms of impact ionization and absorption of spontaneous emission are negligible (see [13, p. 44] and [7]). We assume that the normal component of the electric field and the fluxes of electrons and holes are zero on the insulated boundaries, so that (see Figure 1 the silicon dioxide is thus treated as insulating.…”
Section: Non-lasing Regionmentioning
confidence: 99%
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