The simulation of photocurrent properties of the multi-layer thin film CdS/CdTe solar cell

Abstract

In this paper the photocurrent properties of the CdS/CdTe thin film solar cell were modeled by using relative physical models that were the incoherence model of the optical generation, the continuity equation for carriers and the current density equation. Then the effect of CdS and CdTe thickness on the photo current was simulated. The results of the simulation show that: a optimum CdTe thickness were exited for a max photo current and thinner CdS thickness would reduce the optimum CdTe thickness and be helpful for improving the cell performance and lowing the cell cost. IntroductionAt present the research of thin film photovoltaic cell is highly focus on high efficiency and low-cost solar cells. Polycrystalline CdS/CdTe thin film solar cell is one of the most important high efficiency and low-cost solar cells. The film thickness is one of key manufacturing parameters that affect the cell's cost and environmental protection properties. The open circuit voltage and short-circuit current, which are decisive factors of cell efficiency, are closely related to photocurrent. In this paper thin film solar cell were modeled by using relative physical models that were the incoherence model of the optical generation, the continuity equation for carriers and the current density equation. The relationship of CdS and CdTe thickness and the photo current was simulated, and the optimization of film thickness and related parameters was discussed.