The silicon-silicon dioxide system: Its microstructure and imperfections

Abstract

The microstructural features of the Si-SiO? system and the chemical physics of its defects are reviewed and examined. Topics are grouped by scientific commonality, rather than by the usual technological manifestations. The role of atomic and molecular sized entities is emphasized, and the latter are limited to those containing only Si, 0, H, or combinations thereof. Most of the reported researches involve x-ray or electron diffraction, Auger or photoelectron spectroscopy, Rutherford backscattering, electron spin resonance, or capacitance-voltage or deep-level transient spectroscopy. Several forms of crystalline and amorphous vitreous silica are considered as a basis for discussion of thin film thermal silica on silicon wafers. Local lattice symmetry, stoichiometry, bond lengths and angles, vacancies and voids, dangling orbital centres, and fixed and migratory hydrogen species are treated extensively. Elements of relevant theory are summarized. Overall, it is hoped to provide a solid data base for future development of general models for essential electronic phenomena in the Si-Si02 system.

Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements

“…It should be noted that the maximum concentration of the interface states is observed around E t = E V +0.20 eV and, in dependence on orientation of Si wafer, around E V +0.40 eV for Si (100) and E V +0.30 eV for Si (111). The surface traps with such energy distribution were observed in the SiO 2 /Si interface [18,19], and the maximum concentration at E V +0.40 eV was associated with a mixture of P b0 and P b1 centers and that at E V +0.30 eV -with P b0 centers [20]. Energy distributions of these centers taken from [20] are also depicted in Fig.…”

Hydrogen-Induced Rupture of Strained Si─O Bonds in Amorphous Silicon Dioxide

“…Hydrogen, in its more prevalent forms (H 2 and water), is known to induce hydrolytic weakening of quartz and minerals [8] and degradation phenomena in optical fibers [9] and in SiO 2 -insulated electronic devices. These effects can be facilitated by irradiation [10][11][12], as well as electron injection [13] and lead to bias-temperature instabilities [14,15]. However, the involvement of atomic hydrogen in silica network degradation mechanisms is still poorly understood.…”

Extended interface states enhance valley splitting inSi/SiO2

“…There is strong evidence that this is the most accurate model scenario [14], although crystalline phases of SiO 2 have been reported within a few layers of the interface [16], with direct gap β-cristobalite being the most abundant phase. Our amorphous model consists of TB parameters chosen randomly in the range u III ∈ [u SiO 2 − 0.5, u SiO 2 + 0.5] and v III ∈ [−0.5, 0.5], in units of eV.…”