The Silicon Nitride Film Formed by ECR-CVD for GaN-Based LED Passivation

Chang, Kow–Ming; Lang, C. C.; Cheng, Chih‐Chia

doi:10.1002/1521-396x(200111)188:1<175::aid-pssa175>3.3.co;2-8

Cited by 2 publications

(4 citation statements)

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“…Chang et al 26 found that silicon nitride passivation enhances light output and increases the reliability of GaN-based light emitting diodes by reducing the leakage current. Electrical data in the literature indicates the promise of advanced GaN metal-insulatorsemiconductor (MIS) devices.…”

Section: Band Offsets Of Si 3 N 4 -Gan (0001)mentioning

confidence: 99%

Electronic Properties of GaN (0001) – Dielectric Interfaces

Cook

Fulton

Mecouch

et al. 2004

Int. J. Hi. Spe. Ele. Syst.

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The characteristics of clean n-and p-type GaN (0001) surfaces and the interface between this surface and Si0 2 , Si 3 N 4 , and Hf0 2 have been investigated. Layers of Si0 2 , Si 3 N 4 , or Hf0 2 were carefully deposited to limit the reaction between the film and clean GaN surfaces. After stepwise deposition, the electronic states were measured with x-ray photoelectron spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS). A valence band offset (VBO) of 2.0 ± 0.2 eV with a conduction band offset (CBO) of 3.6 ± 0.2 eV was determined for the GaN/Si0 2 interface. The large band offsets suggest Si0 2 is an excellent candidate for passivation of GaN. For the GaN/Si 3 N 4 interface, type II band alignment was observed with a VBO of -0.5 ± 0.2 eV and a CBO of 2.4 ± 0.2 eV. While Si 3 N 4 should passivate n-type GaN surfaces, it may not be appropriate for p-type GaN surfaces. A VBO of 0.3 ± 0.2 eV with a CBO of 2.1 ± 0.2 eV was determined for the annealed GaN/Hf0 2 interface. An instability was observed in the Hf0 2 film, with energy bands shifting -0.4 eV during a 650 °C densification anneal. The electron affinity measurements via UPS were 3.0, 1.1, 1.8, and 2.9 ±0.1 eV for GaN, Si0 2 , Si 3 N 4 , and Hf0 2 surfaces, respectively. The deduced band alignments were compared to the predictions of the electron affinity model and deviations were attributed to a change of the interface dipole. Interface dipoles contributed 1.6, 1.1 and 2.0 ± 0.2 eV to the band alignment of the GaN/Si0 2 , GaN/Si 3 N 4 , and GaN/Hf0 2 interfaces, respectively. It was noted that the existence of Ga-0 bonding at the heterojunction could significantly affect the interface dipole, and consequently the band alignment in relation to the GaN.

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Section: Band Offsets Of Si 3 N 4 -Gan (0001)mentioning

confidence: 99%

Electronic Properties of GaN (0001) – Dielectric Interfaces

Cook

Fulton

Mecouch

et al. 2004

Int. J. Hi. Spe. Ele. Syst.

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“…This observation does not depend on the distance between the contact pad and edge of p-n junction. These results can be explained by the fact that plasma-damaged LED die sidewalls are effective moisture absorbers that result in degradation, supporting the shunt current through surface states [17]. In Fig.…”

Section: Resultsmentioning

confidence: 54%

“…Finally, the mitigation of leakage through surface states requires an appropriate passivation of LED dies with dielectric layers that decreases non-radiative recombination and thus results in increased radiative efficiency. [17], and SiON x [18,19] have been used. A common passivation approach is a thin layer of dielectric coating covering the entire LED die surface followed by opening windows for contact pads after metalization [12e15,17e20].…”

Section: Introductionmentioning

confidence: 99%

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Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors

Шеремет

Genç²,

Gheshlaghi

et al. 2018

Superlattices and Microstructures

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Enhancement of InGaN/GaN based light emitting diode performance with step graded electron injectors through a two-step passivation is reported. Perimeter passivation of LED dies with SiO 2 immediately following ICP mesa etch in addition to conventional Si 3 N 4 dielectric surface passivation leads to decrease in the reverse bias leakage current by a factor of two as well as a decrease in the shunt current under forward bias by an order of magnitude. Mitigation of the leakage currents owing to the two-step passivation leads to significant increase in the radiant intensity of LEDs by more than a factor of two compared to the conventional single step surface passivation. Further, micro-dome patterned surface of Si 3 N 4 passivation layer allow enhanced light extraction from LEDs.

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The Silicon Nitride Film Formed by ECR-CVD for GaN-Based LED Passivation

Cited by 2 publications

References 0 publications

Electronic Properties of GaN (0001) – Dielectric Interfaces

Electronic Properties of GaN (0001) – Dielectric Interfaces

Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors

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