The silicon microstrip sensors of the ATLAS semiconductor tracker

Ahmad, A.; Albrechtskirchinger, Z.; Allport, P. P.; Alonso, J.; Andricek, L.; Apsimon, R.; Barr, A. J.; Bates, R. L.; Beck, G. A.; Bell, P. J.; Belymam, A.; Beneš, J.; Berg, C.M.; Bernabéu, J.; Bethke, S.; Bingefors, N.; Bizzell, J.P.; Böhm, J.; Brenner, R.; Brodbeck, T. J.; Renstrom, P. A. Bruckman de; Buttar, C. M.; Campbell, Duncan; Carpentieri, C.; Carter, A.A.; Carter, J.R.; Charlton, D. G.; Casse, G.; Chilingarov, A.; Cindro, V.; Ciocio, A.; Civera, Javier; Clark, A.; Colijn, A. P.; Costa, M.; Dąbrowski, W.; Danielsen, K.M.; Dawson, I.; Demirköz, B.; Dervan, P.; Doležal, Z.; Dorholt, O.; Duerdoth, I. P.; Dwužnik, M.; Eckert, S.; Ekelöf, T.; Eklund, L.; Escobar, C.; Fasching, D.; Felď, L.; Ferguson, D.; Ferrère, D.; Fortin, R; Foster, J. M.; Fox, H.; French, Richard; Fromant, B.P.; Fujita, K.; Fuster, J.; Gadomski, S.; Gallop, B. J.; Garćıa, C.; GarcíaNavarro, J. E.; Gibson, Murray; González, S.; González-Sevilla, S.; Goodrick, M. J.; Górnicki, E.; Green, C.; Greenall, A.; Grigson, C.; Grillo, A.A.; Große-Knetter, J.; Haber, C.; Handa, T.; Hara, K.; Harper, R.; Hartjes, F.; Hashizaki, T.; Hauff, D.; Hessey, N. P.; Hill, J. C.; Hollins, T. I.; Holt, S. S.; Horažďovský, T.; Hornung, M.; Hovland, K.M.; Hughes, G.; Huse, T.; Ikegami, Y.; Iwata, Y.; Jackson, J.; Jakobs, K.; Jared, R. C.; Johansen, L. G.; Jones, Roger; Jones, T. J.; Jong, P. de; Joseph, J.; Jovanović, P.; Kapłon, J.; Kato, Yuta; Ketterer, C.; Kindervaag, I.M.; Kodyš, P.; Koffeman, E.; Kohriki, T.; Kohout, Z.; Kondo, T.; Koperny, S.; Kraaij, E. van der; Král, V.; Kramberger, G.; Kudłaty, J.; Lacasta, C.; Limper, M.; Linhart, V.; Llosá, G.; Lozano, M.; Ludwig, I.; Ludwig, J.; Lütz, G.; Macpherson, A.; McMahon, S. J.; Macina, D.; Magrath, C. A.; Malecki, Pa.; Mandić, I.; Martí-García, S.; Matsuo, Toshihiko; Meinhardt, J.; Mellado, B.; Mercer, I.; Mikeštíková, M.; Mikuž, M.; Miñano, M.; Mistry, J.; Mitsou, V. A.; Modesto, P.; Mohn, B.; Molloy, S.; Moorhead, G. F.; Moraes, A.; Морган, Д.; Morone, M. C.; Morris, J. D.; Moser, H. G.; Moszczyński, A.; Muijs, A. J.M.; Nagai, K.; Nakamura, Yuki; Nakano, I.; Nicholson, R. J.; Niinikoski, T.; Nisius, R.; Ohsugi, T.; O’Shea, V.; Øye, O. K.; Parzefall, U.; Pater, J. R.; Pernegger, H.; Phillips, P. W.; Pospı́šil, S.; Ratoff, P. N.; Řezníček, P.; Richardson, J. D.; Richter, R.; Robinson, D.; Roe, S.; Ruggiero, G.; Runge, K.; Sadrozinski, H. F-W.; Sandaker, H.; Schieck, J.; Seiden, A.; Shinma, S.; Siegrist, J.; Sloan, T.; Smith, N. A.; Snow, S. W.; Solar, M.; Solberg, Arne; Sopko, B.; Sospedra, L.; Spieler, H.; Stanecka, E.; Stapnes, S.; Šťastný, J.; Stelzer, Franz; Stradling, A. R.; Stugu, B.; Takashima, R.; Tanaka, R.; Taylor, G. N.; Terada, S.; Thompson, R. J.; Titov, M.; Tomeda, Y.; Tovey, D. R.; Turała, M.; Turner, P.R.; Tyndel, M.; Ullán, M.; Unno, Y.; Vickey, T.; Vos, M.; Wallny, R.; Weilhammer, P.; Wells, P. S.; Wilson, J. A.; Wolter, M. W.; Wormald, M.; Wu, S. L.; Yamashita, T.; Žontar, D.; Žsenei, A.

doi:10.1016/j.nima.2007.04.157

Cited by 74 publications

(67 citation statements)

References 23 publications

(34 reference statements)

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“…This is due to a p-stop potential of about -70 V. shallower than that of the corresponding width of the common p-stop case. We have two surprises: (1) the potential of the bulk between the individual p-stops is only slightly shallower…”

Section: +N-fl1uni +N-p1uummentioning

confidence: 97%

P-stop designs for reducing electric field strength at implant edges

Unno

Ikegami

Kohriki

et al. 2008

2008 IEEE Nuclear Science Symposium Conference Record

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Section: +N-fl1uni +N-p1uummentioning

confidence: 97%

P-stop designs for reducing electric field strength at implant edges

Unno

Ikegami

Kohriki

et al. 2008

2008 IEEE Nuclear Science Symposium Conference Record

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“…The barrel sensors and 75% of the endcap sensors were supplied by Hamamatsu Photonics, 2 while the remaining endcap sensors were supplied by CiS. 3 Sensors supplied by the two manufacturers meet the same performance specifications, but differ in design and processing details [8]. The majority of the modules are constructed from silicon wafers with crystal lattice orientation (Miller indices) <111>.…”

Section: Layout and Modulesmentioning

confidence: 99%

“…The primary charge from such a particle can extend over at most two strips, and observed clusters larger than this arise primarily from δ -ray production. The production of a single δ -ray adds strips to one side of the cluster, leading to a shift in the cluster centroid, and -39 -a shift in the track residual 8 of approximately (w o − w e )/2. An example residual distribution for clusters of width six strips is shown in figure 26a.…”

Section: Measurement Of δ -Ray Productionmentioning

confidence: 99%

Operation and performance of the ATLAS Semiconductor Tracker

Barlow

2013

2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications (ANIMM

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The semiconductor tracker is a silicon microstrip detector forming part of the inner tracking system of the ATLAS experiment at the LHC. The operation and performance of the semiconductor tracker during the first years of LHC running are described. More than 99% of the detector modules were operational during this period, with an average intrinsic hit efficiency of (99.74±0.04)%. The evolution of the noise occupancy is discussed, and measurements of the Lorentz angle, δ -ray production and energy loss presented. The alignment of the detector is found to be stable at the few-micron level over long periods of time. Radiation damage measurements, which include the evolution of detector leakage currents, are found to be consistent with predictions and are used in the verification of radiation background simulations. A Estimation of the bulk leakage current using models 52The ATLAS collaboration 57 IntroductionThe ATLAS detector [1] is a multi-purpose apparatus designed to study a wide range of physics processes at the Large Hadron Collider (LHC) [2] at CERN. In addition to measurements of Standard Model processes such as vector-boson and top-quark production, the properties of the newly discovered Higgs boson [3,4] are being investigated and searches are being carried out for as yet undiscovered particles such as those predicted by theories including supersymmetry. All of these studies rely heavily on the excellent performance of the ATLAS inner detector tracking system. The semiconductor tracker (SCT) is a precision silicon microstrip detector which forms an integral part of this tracking system. The ATLAS detector is divided into three main components. A high-precision toroid-field muon spectrometer surrounds electromagnetic and hadronic calorimeters, which in turn surround the inner detector. This comprises three complementary subdetectors: a silicon pixel detector covering radial distances 1 between 50.5 mm and 150 mm, the SCT covering radial distances from 299 mm to 560 mm and a transition radiation tracker (TRT) covering radial distances from 563 mm to 1066 mm. These detectors are surrounded by a superconducting solenoid providing a 2 T axial magnetic field. The layout of the inner detector, showing the SCT together with the pixel detector and transition radiation tracker, is shown in figure 1. The inner detector measures the trajectories of charged particles within the pseudorapidity range |η| < 2.5. It has been designed to provide a transverse momentum resolution, in the plane perpendicular to the beam axis, of 1 ATLAS uses a right-handed coordinate system with its origin at the nominal interaction point in the centre of the detector and the z-axis along the beam-pipe. The x-axis points from the interaction point to the centre of the LHC ring and the y-axis points upwards. Cylindrical coordinates (r, φ ) are used in the transverse plane, φ being the azimuthal angle around the beam-pipe. The pseudorapidity η is defined in terms of the polar angle θ as η = − ln tan(θ /2).-1 -

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“…The barrel and end-cap modules share common design features despite their different shapes. They comprise wire-bonded pairs of single-sided p-on-n AC-coupled micro-strip detectors [4] glued back-to-back on either side of a thermal pyrolytic graphite (TPG) support. The TPG support conducts heat away from the sensors to cooling block contacts and provides the bias contact for the sensors.…”

Section: The Silicon Modulesmentioning

confidence: 99%

Silicon Central Tracker Commissioning in ATLAS

Robinson¹

2008

Proceedings of the 16th International Workshop on Vertex Detectors — PoS(Vertex 2007)

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The ATLAS silicon tracker is installed in the ATLAS cavern and commissioning is well advanced. The assembly and commissioning milestones are reviewed, and the commissioning of the electrical and optical system immediately after installation within the ATLAS cavern is described. The final electrical performance of the barrel section of the tracker after installation and connection to the final services is presented. The silicon tracker performs well within specification.

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The silicon microstrip sensors of the ATLAS semiconductor tracker

Cited by 74 publications

References 23 publications

P-stop designs for reducing electric field strength at implant edges

P-stop designs for reducing electric field strength at implant edges

Operation and performance of the ATLAS Semiconductor Tracker

Silicon Central Tracker Commissioning in ATLAS

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