The silicon heterostructure switch: developments and experimental evaluation

Abstract

The MISS has been an extensively studied device, but various processing problems cause them to be unreliable in the long term. The metal-semi-insulator-silicon switch is a more rugged version of this kind of structure. The semi-insulator can be, typically, of polysilicon or SIPOS. Both of these lead to a greater inbuilt tolerance of the processing aspects. This paper describes the practical evaluation of the MPSS, in which the semi-insulating layer is polysilicon. Temperature effects on main parameters, and correlation with a theoretical model, are considered.