The Semiconductor Fast-Neutron Dosimeter-Its Characteristics and Applications

Kramer, Gordon

doi:10.1109/tns.1966.4323951

Cited by 4 publications

(4 citation statements)

References 8 publications

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“…Equation ( 3) is based on the sensitivity theory for high level injection in [1]. The experimental results of the bilateral diodes under a high level injection condition fit well with (2). The sensitivity data of the diode with of m and of m is shown in Fig.…”

Section: Results and Analysismentioning

confidence: 60%

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Bilateral PIN Diode for Fast Neutron Dose Measurement

Zhou

et al. 2014

IEEE Trans. Nucl. Sci.

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A silicon-based bilateral diode for fast neutron dose measurement is presented to take advantage of vertical and lateral current distributions and to achieve high uniform current distribution. The structure is designed to place rectangle and contacts on each side of the n-Si wafer. Diodes with different structure parameters are fabricated and the sensitivity to neutron dose is measured. It is found that, in this research, the increase in the lateral space between the two contacts can effectively increase sensitivity. Furthermore, the decrease of the contact length and the increase of current density can also increase sensitivity. The measured sensitivity data are verified with the model.

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Section: Results and Analysismentioning

confidence: 60%

“…In (2), is sensitivity in the unit of mV/mSv, is current density in the unit of and , are coefficients related to diode structure in the units of mV/mSv and ( )/( ). The theoretical model to explain (2) is derived from circular shape dosimeter in [8].…”

Section: Results and Analysismentioning

confidence: 99%

Bilateral PIN Diode for Fast Neutron Dose Measurement

Zhou

et al. 2014

IEEE Trans. Nucl. Sci.

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“…Under neutron bombardment, damage is introduced into the silicon lattice which acts as recombination centers for carriers; thus, the lifetime of excess carriers is degraded causing increase in the forward voltage across the diode at constant current [1]. So, the current-voltage characteristic of the PIN diode is modified by the irradiation, which is used for neutron dose measurement [2][3][4][5][6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

“…Research shows that the sensitivity of the PIN diode neutron dosimeter is greatly affected by the silicon material, geometry of diodes, working current, and neutron dose [3][4][5][6][7][8]. The intrinsic layer thickness critically needs to be increased to improve the measurement sensitivity [3].…”

Section: Introductionmentioning

confidence: 99%

New PIN diode structure for neutron dose measurement

Liu

Fan

et al. 2012

J. Inst.

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Planar silicon PIN diodes have been proposed as neutron dosimeters before. In this paper, a new structure of planar silicon PIN diode with ring shaped backside n + doping is proposed. Simulation shows effective improvement in the current distribution compared with a normal planar PIN structure. Diodes with different lateral spaces between p + and n + , i.e., 200-500 µm, were fabricated. The sensitivity of the diodes to neutron irradiation was measured. The dependence of the sensitivity on the working current of the diode was analyzed. The impact of the lateral space on the diode sensitivity was investigated. The results show that the sensitivity of the diode is proportional to the square root of the current at high-level injection and increases with the lateral space between the p + and n + regions.

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