The second‐generation of CdTe and CuInGaSe₂ thin film PV modules

Abstract

The state of the art of the second-generation of solar cells based on the CdTe and CuInGaSe 2 thin film technology will be described. This type of cells reached, on laboratory scale, photovoltaic conversion efficiencies respectively of 16.5% and 20.3% very close to those obtained with bulk materials. In particular, the materials, the layer sequences and deposition techniques used for the preparation of these two absorbers are described. Particular emphasis will be placed on major innovations that have enabled us to achieve high efficiencies with polycrystalline materials, showing how thin-film technology is mature enough to be transferred to industrial production. Finally, we will discuss about a project of technology-transfer developed at Parma University for the production of photovoltaic modules at an industrial level. In the near future, with our process, Arendi S.p.A. will reach a productivity of 18 MW/year.

Single-step preparation and characterization of Cu2ZnSn(SxSe1−x)4 thin films deposited by pulsed laser deposition method

“…Thus, the relatively long distance between CZTSSe targets and substrates probably leads to the insufficiency of Cu in CZTSSe films. It should be noted that CZTSSe thin film solar cells with the highest conversion efficiency are usually Cupoor state [6][7][8][9][10]. Hence, the selection of distance between target and substrate is very important for the preparation of CZTSSe films as absorber materials of thin film solar cells.…”

“…Up to now, the highest PCE of CZTSSe thin film solar cell has reached up to 10.1% [6], the result demonstrates CZTSSe thin films have the great potential as an alternative absorber for CdTe or Cu(In,Ga)(S,Se) 2 thin film solar cells. However, compared with the conversion efficiency of Cu(In,Ga)(S,Se) 2 thin film solar cell, which has approached to 20.3% [10], CZTSSe thin film solar cell needs more systematic researches to further improve conversion efficiency.…”

A Simple Sb2Te3 Back-Contact Process for CdTe Solar Cells

“…According to literature reports and our experimental confirmation, NP-etching yields a Te-rich layer on the CdTe layer surface. 6,8 To obtain different Te-rich layer thicknesses, the samples were prepared with different NP-etching times (30 s, 20 s, and 15 s). The reference solar cell preparation conditions entail sputtering of an Sb 2 Te 3 layer (from a Sb 2 Te 3 compound target) on the NP-etched (30 s) Te-rich CdTe layer and sputtering of Mo as metal contact layer.…”

“…For non-copper-based CdTe solar cells, especially, the CdTe surface must be etched with a mixture of nitric and phosphoric acids (NP-etching) to obtain a Te-rich layer which helps to form an ohmic back contact. 6,7 With modern technology, the chemical etching process can be implemented effectively in any production line. For the samples described in this manuscript, we optimized the NP-etching process to enable uniform etching over the complete area of the CdTe layer surface.…”

Development and Simulation of a Structure Based on CuIn1-xGaxSe2 Semiconductors Alloys for a New Generation of Photovoltaic Cells

“…Where is the photon flux to the Air Mass Coefficient (AM) of spectrum in standard PV modules test conditions referenced AM 1.5 [9][10][11][12][13].…”