The role of the substrate in the high energy boron implantation damage recovering

Mica, I.; Piazza, L. Di; Laurin, L.; Mariani, M.; Mauri, Aurelio Giancarlo; Polignano, M. L.; Ricci, E.; Sammiceli, F.; Spoldi, G.

doi:10.1016/j.mseb.2008.05.022

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2010

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“…This model yields a vacancy supersaturation under the same parameters and conditions. However, there are hints that the interstitial supersaturation really exists because RTA pre-treated silicon wafers exhibit a strong enlargement of interstitial type dislocation loops generated by boron implantation into long dislocation dipoles compared to wafers without RTA pretreatment (9). This effect can be assumed to be the result of the excess interstitials.…”

Section: Type Of Complex (Vibrational Mode)mentioning

confidence: 99%

Modeling the Early Stages of Oxygen Agglomeration

et al. 2010

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The results of ab initio calculations and rate equation modeling of the early stages of oxide precipitation are compared with the results of highly sensitive FTIR spectrometry of oxygen and vacancy oxygen containing complexes in silicon after RTA treatment. The ab initio calculations have shown that the binding energy of interstitial oxygen in VO n is higher than in O n for n d 6. For higher n, the energy gain is comparable. The point defect species O 1 , O 2 , O 3 , and VO 4 were detected by highly sensitive FTIR in high oxygen Czochralski silicon wafers after RTA at 1250 °C. The concentrations obtained from the ab initio modeling approach for I, V, O n with n = (1-4) and VO n with n = (1-8) without fitting parameters are in good agreement with the experimental data for O 1 , O 2 , O 3 , and VO 4 as determined by highly sensitive FTIR.

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Section: Type Of Complex (Vibrational Mode)mentioning

confidence: 99%