2015
DOI: 10.1063/1.4918909
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The role of the non-magnetic material in spin pumping and magnetization dynamics in NiFe and CoFeB multilayer systems

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Cited by 75 publications
(71 citation statements)
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“…However, the effect of spin pumping should be very limited over the studied thickness range of Pt, as it is comparable or below the spin-diffusion length, λ sd [12,[33][34][35][36]. Hence, d-d hybridization mainly contributes to the intrinsic enhancement of the damping.…”
Section: Discussionmentioning
confidence: 99%
“…However, the effect of spin pumping should be very limited over the studied thickness range of Pt, as it is comparable or below the spin-diffusion length, λ sd [12,[33][34][35][36]. Hence, d-d hybridization mainly contributes to the intrinsic enhancement of the damping.…”
Section: Discussionmentioning
confidence: 99%
“…For instance, recently, Ruiz-Calaforra et al [12] presented a meticulous research on FM/NM multilayers, where FM is a ferromagnetic material, as NiFe and CoFeB, alloys commonly used as free layer in Tunnel Magnetoresistance (TMR) and Giant Magnetostriction (GMS) stacks, while NM is a non-magnetic spacer material, as Pt, Al, Cr, Ru and MgO, materials frequently employed in spintronics studies, and explored the magnetization dynamics through the ferromagnetic resonance effect (FMR) and inverse spin Hall effect. From the experimental FMR results, an estimative of the effective damping parameter was obtained.…”
Section: Introductionmentioning
confidence: 98%
“…In particular, the magnetic damping plays an important role as a tuning parameter. While systems with low damping parameter are employed in ultrafast sensors [10,11], systems presenting high damping one are explored in spin pumping and inverse spin Hall effect applications [5,12].…”
Section: Introductionmentioning
confidence: 99%
“…13 To improve its flexibility for applications, it is also of interest to deposit Fe 4 N on the non-magnetic metal buffer layers rather than single crystal substrates, as the metal layers underneath Fe 4 N may facilitate a variety of spintronics devices. 3,4,14,15 In addition, the spin polarization of a material is closely related to its growth conditions and crystallinity. Therefore, studying the spin a Author to whom correspondence should be addressed: jpwang@umn.edu 2158-3226/2017/7(9)/095001/6 7, 095001-1 © Author(s) 2017 polarization of Fe 4 N grown on a practical metal buffer layer is also very helpful for its applications in spintronics.…”
Section: Introductionmentioning
confidence: 99%
“…The Ta/Ru buffer layer also potentially works as the bottom electrodes of the MTJ/GMR 3,4 and the nonmagnetic materials in the spin pumping devices. 14 The nitrogen compositions of the films and the deposition temperature were tuned to optimize the phase formation of Fe 4 N. Moreover, the spin polarization of the (111) oriented Fe 4 N was measured by the point contact Andreev reflection (PACR) method. 16 The thickness dependence of the spin polarization was also studied.…”
Section: Introductionmentioning
confidence: 99%