The role of surface morphology in a performance of top-gate OFETs prepared from a solution processable derivative of perylene bisimide

Kucińska, Magdalena; Frac, Izabela; Ulański, Jacek; Makowski, Tomasz; Nosal, Andrzej; Gazicki-Lipman, M.

doi:10.1016/j.synthmet.2019.02.008

Cited by 10 publications

(6 citation statements)

References 28 publications

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“…Further, the surface roughness of the dielectric layer plays a dominant role in the performance of OFETs as they can impede the flow of charge at the interface and reduce the mobility of the OFET. [33,34] In the present case, the surface roughness of the dielectric layers are characterized using atomic force microscopy (AFM) and given in Figure 6. The calculated root mean square roughness values are 0.5, 0.8, and 1.4 nm for PMMA, PS, and SiO 2 , respectively.…”

Section: Interface Trap Density Calculationsmentioning

confidence: 99%

A Combined Theoretical and Experimental Approach to Deduce the Role of Dielectric Layer on Interface Trap Density in Single Crystal Organic Field‐Effect Transistors

Bhattacharya

Praveen

et al. 2023

Cryst. Res. Technol.

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A detailed understanding of charge transport at the interface is necessary to explore the potential of organic field-effect transistors. This can be realized by adequately analyzing the trap states at the interface. In the present work, rubrene-based organic field-effect transistors have been fabricated with three different interfaces. The device properties are used along with a technology computer-aided design to deduce the interface trap density quantitatively. The transfer characteristics are simulated using a double Gaussian density of states and fitted with experimental data by adding traps to the semiconductor dielectric interface. A typical transistor with SiO 2 interface has shown an interface trap density of about ≈ 10 16 cm −2 , and it is reduced to 10 14 cm −2 when poly(methyl)methacrylate or polystyrene is coated on SiO 2 interface, attributed to the surface passivation. This approach provides a simple and accurate way to estimate the interfacial traps and offers the possibility to tune the device architecture and performance.

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Section: Interface Trap Density Calculationsmentioning

confidence: 99%

A Combined Theoretical and Experimental Approach to Deduce the Role of Dielectric Layer on Interface Trap Density in Single Crystal Organic Field‐Effect Transistors

Bhattacharya

Praveen

et al. 2023

Cryst. Res. Technol.

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“…The devices were optimised by varying annealing temperatures [3,79,80], the concentration of the substrate, solvent choice [81], and application of self-assembled monolayers (SAM). SAMs are coated on the dielectric medium, improving surface roughness [82] and reduce interfacial defects [83].…”

Section: Organic Field-effect Transistorsmentioning

confidence: 99%

Introducing a new 7-ring fused diindenone-dithieno[3,2-b:2',3'-d]thiophene unit as a promising component for organic semiconductor materials

Fell¹,

Cameron²,

Kanibolotsky³

et al. 2022

Beilstein J. Org. Chem.

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A novel π-conjugated molecule, EtH-T-DI-DTT is reported, which is fused, rigid, and planar, featuring the electron-rich dithieno[3,2-b:2’,3’-d]thiophene (DTT) unit in the core of the structure. Adjacent to the electron-donating DTT core, there are indenone units with electron-withdrawing keto groups. To enable solubility in common organic solvents, the fused system is flanked by ethylhexylthiophene groups. The material is a dark, amorphous solid with an onset of absorption at 638 nm in CH2Cl2 solution, which corresponds to an optical gap of 1.94 eV. In films, the absorption onset wavelength is at 701 nm, which corresponds to 1.77 eV. An ionisation energy of 5.5 eV and an electron affinity of 3.3 eV were estimated by cyclic voltammetry measurements. We have applied this new molecule in organic field effect transistors. The material exhibited a p-type mobility up to 1.33 × 10−4 cm2 V−1 s−1.

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“…Among the solution processable OSCs, N , N ′-dipentyl-3,4,9,10-perylenedicarboximide (PTCDI-C 5 ) is a perylene tetracarboxylic-diimide (PTCDI) derivative that has been widely studied as an n -type OSC owing to its molecular design with a conjugated polyaromatic perylene backbone, which has high electron affinity and strong π–π stacking interaction. − It is also a potential material for the solution process because the additional side chains introduced to the perylene backbone increase the solubility for typical organic solvents. However, previously reported results of solution-processed PTCDI-C 5 crystals on Si/SiO 2 substrate indicated low charge carrier mobility (μ FET ∼ 6.9 × 10 –5 cm 2 /V·s) under ambient conditions (with rapid deterioration after a few hours without a passivation layer) or vacuum or N 2 conditions, , similar to the transistors with a thermally deposited thin film layer. , Recently, OFETs with a combination of PTCDI-C 5 crystals and other OSC materials were reported to form via solution pinning and were successfully fabricated and characterized as ambipolar transistors or phototransistors under ambient conditions. − However, the electronic characteristics of PTCDI-C 5 crystal-based devices have not been thoroughly studied.…”

Section: Introductionmentioning

confidence: 99%

Polymer-Gated Transistors with Only One Solution-Processed, Single Crystalline Organic Microwire for Light and Oxygen Detection

Lee

Tarsoly

Shin

et al. 2023

ACS Appl. Mater. Interfaces

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Organic semiconductors employed in single crystalline form have several advantages over polycrystalline films, such as higher charge carrier mobility and better environmental stability. Herein, we report the fabrication and characterization of a solution-processed microsized single-crystalline organic wire of n-type N,N′-dipentyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C 5 ). The crystal was applied as an active layer in polymer-gated organic field-effect transistors (OFETs) and organic complementary inverter circuits. The single crystaiiline nature of PTCDI-C 5 wires were characterized using two-dimensional grazing incidence wide-angle X-ray diffraction (2D-GIXD) and polarized optical microscopy. OFETs with the PTCDI-C 5 crystals exhibited high n-type performance and air stability under ambient conditions. To investigate the electrical properties of the singlecrystalline PTCDI-C 5 wire more precisely, OFETs with only one PTCDI-C 5 microwire in the channel were fabricated, and clear n-type characteristics with satisfactory saturation behavior were observed. The device with only one crystal wire exhibited characteristics with significantly lower variation compared to the multicrystal devices, which shows that the density of crystal wires is a critical factor in precisely investigating device performance. The devices exhibited a reversible threshold voltage shift under vacuum and oxygen conditions, without changing the charge carrier mobility. Light-sensitive characteristics were also observed. Additionally, this solution-processed, highly crystalline organic semiconductor can be used in high-performance organic electronic circuits as well as in gas or light sensors.

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The role of surface morphology in a performance of top-gate OFETs prepared from a solution processable derivative of perylene bisimide

Cited by 10 publications

References 28 publications

A Combined Theoretical and Experimental Approach to Deduce the Role of Dielectric Layer on Interface Trap Density in Single Crystal Organic Field‐Effect Transistors

A Combined Theoretical and Experimental Approach to Deduce the Role of Dielectric Layer on Interface Trap Density in Single Crystal Organic Field‐Effect Transistors

Introducing a new 7-ring fused diindenone-dithieno[3,2-b:2',3'-d]thiophene unit as a promising component for organic semiconductor materials

Polymer-Gated Transistors with Only One Solution-Processed, Single Crystalline Organic Microwire for Light and Oxygen Detection

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