The role of Sb in the MBE growth of (GaIn)(NAsSb)

Volz, Kerstin; Gambin, Vincent; Ha, Wonill; Wistey, Mark A.; Yuen, H. B.; Bank, Seth R.; Harris, James S.

doi:10.1016/s0022-0248(02)02198-x

Cited by 75 publications

(64 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thus, the reduction in the band gap energy, with respect to the corresponding host non-nitride alloys, ranges from 105 to 250 meV/ % N in various dilute nitride III-V systems. 2,3,6,8,15,18,22,23 It may be noted that, in comparison to other III-As based N alloys, the redshift in the emission wavelength is greater in Sb or mixed Sb-As based system. A similar conclusion has been drawn by Harmand et al 24 where they report the reductions of 127, 124, and 151 meV% N contributions due only to N in the annealed GaAsN, InGaAsN, and GaAsSbN systems, respectively, relative to GaAs after carefully excluding the strain effects.…”

Section: Discussionmentioning

confidence: 93%

“…Extending the wavelength of operation to 1.55 m in this alloy system dictates N and In concentrations exceeding 2% and 35%, respectively, resulting in considerable degradation of the structural and optical properties. [1][2][3][4][5] However, addition of Sb to this system allowed enhanced In incorporation resulting in redshifting the wavelength further to 1.55 m with improved material quality. [1][2][3][4][5] Vertical cavity surface emitting lasers ͑VCSEL͒ have been successfully demonstrated at 1.45 m using this quinary system.…”

Section: Introductionmentioning

confidence: 99%

“…The low temperature photoluminescence ͑PL͒ characteristics in this system are reported [7][8][9][10][11][12] to be dominated by localized excitons due to the N induced localized states and potential fluctuations. Different annealing techniques have been improvised by various groups [1][2][3][4][5][6][7][8][9][10][11][12][13] for the annihilation of N related states to improve the PL efficiency. Our recent work 9,13 indicates that in situ annealing in an As ambient is more effective in the reduction of the density of localized states and nonradiative recombination centers that are responsible for PL thermal quenching.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Nitrogen incorporation and optical studies of GaAsSbN∕GaAs single quantum well heterostructures

Nunna¹,

Iyer²,

Wu³

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

In this work, the effects of N incorporation on the optical properties of GaAsSbN / GaAs single quantum wells ͑SQWs͒ have been investigated using temperature, excitation, and magnetic dependencies of photoluminescence ͑PL͒ characteristics. These layers were grown in an elemental solid source molecular beam epitaxy system with a rf plasma N source. The N concentrations in the range of 0.5%-2.5% were investigated in this study. The SQW with N ϳ 0.5% exhibits a behavior similar to that in an intermediate regime where the contributions from the localized states in the band gap are dominant. The temperature and excitation dependencies of the PL characteristics indicate that for the N concentration of 0.9% and above, the alloy behavior is analogous to that of a regular alloy and the changes in optical properties are only marginal. The conduction band effective mass ͑m eff ͒ values computed from the magnetophotoluminescence spectra using a variational formalism and the band anticrossing model are in good agreement and indicate enhanced values of m eff . However, there is no significant variation in m eff values of QWs for N ജ 0.9%. Small redshift of about 30-50 meV for the temperature variations from 10 to 300 K in conjunction with unusually small blueshift observed in the excitation dependence of PL for N ജ 0.9% indicate that this system holds a great promise for laser applications at 1.55 m and beyond.

show abstract

Section: Discussionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Nitrogen incorporation and optical studies of GaAsSbN∕GaAs single quantum well heterostructures

Nunna¹,

Iyer²,

Wu³

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Sb and Bi containing organometallics are already widely used in commercial and research reactors for doping (in group IV semiconductors) and alloying (in III/V semicondutors). The surfactant effects of Sb have been studied on GaInP (GaIn)(NAsSb) [16], InGaAs [17], and GaAs [18,19]. B' 1 surfactant effects have been studied on GaInP [7,9], GaAs [19], InGaAs [20,17], InGaNAs [21], Si [22], and during the fabrication of InAs quantum dots [23].…”

Section: Sb and Bi Surfactant Effects On Homo-epitaxy Of Gaas On (001mentioning

confidence: 99%

Theory and experimental study of surfactant effects on epitaxial growth of compound semiconductors.

Wixom

2004

View full text Add to dashboard Cite

The work discussed in this report was supported by a Campus Fellowship LDRD. The report contains three papers that were published by the fellowship recipient and these papers form the bulk of his dissertation. They are reproduced here to satisfy LDRD reporting requirements. 3 IntroductionOrganometallic vapor phase epitaxy (OMVPE) is used for fundamental research and commercial production of Ill-V electronic and optical devices. An understanding of the surface processes leads to improved control of epitaxial thin film properties and enables development of next-generation optoelectronic devices. A knowledge of the growth surface, obtained by experimental and computational means, has been helpful in exploring theories about morphological evolution, alloy composition, and ordering in a wide variety of materials systems. Surfactants are also proving to be an essential tool for engineering novel materials. The effects of surfactants such as Sb, Bi, and Te on Gap, InP, GalnP, and GaAs were studied by experiment and simulation. These surfactants were found to induce changes in surface structure, control ordering, and modify fundamental surface kinetics.Surface photo-absorption (SPA) has previously shown that the surfactant Sb, present during epitaxial growth of GalnP, modifies the surface reconstruction, induces triple-period ordering, and results in bulk composition modulation. Due to the nature of the OMVPE environment, detailed in-situ study of atomic scale growth processes is not possible. Ab-initio calculations, making use of Density Functional Theory (DFT), were performed to identify Sb induced surface reconstructions on GaP and InP (001) surfaces. A method for calculating the surface energies of these reconstructions was developed and used to create surface phase diagrams for the surfactant covered alloys. Reconstructions predicted by these phase diagrams, with (4 X 3) and (2 X 3) periodicity, explain the triple-period ordering in GalnP grown with Sb surfactant.The previously observed Sb induced composition modulation seen in GalnP indicates an increase in anisotropic adatom surface diffusion. Surfactant enhanced surface mass transport is certain to have other interesting consequences as well. To investigate this, the surfactant effects of Sb, Bi, and Te on the surface kinetics of GaAs were studied. Homoepitaxy of patterned GaAs (001) substrates was performed with increasing concentrations of surfactant. The morphological evolution of the singular surface and patterned features was studied by optical and atomic force microscopy (AFM Both Sb and Bi enhanced the [-I IO] lateral growth rate as much as 300%, while having little effect on the orthogonal direction. A kinetic Monte-Carlo simulation was used to explore the range of possible surfactant mechanisms responsible for this dramatically anisotropic evolution of the patterned features. An increase in adatom hop frequency in the [-I IO] direction was identified as the most reasonable explanation and this hypothesis was corroborated by the simulation. 5The...

show abstract

“…InGaAsN / GaAs has been the most extensively studied system; however, the operating wavelength of 1.55 m necessitates N and In concentrations exceeding 2% and 35%, respectively, leading to considerable degradation of the structural and optical properties. [1][2][3][4] More recently InGaAsN͑Sb͒ / GaAs system has been demonstrated to be successful in this wavelength range 2,3,5 but five components make the system more complex. The work on GaAsSbN / GaAs system has been somewhat limited.…”

Section: Introductionmentioning

confidence: 99%

Optical studies of molecular beam epitaxy grown GaAsSbN∕GaAs single quantum well structures

Nunna

Iyer

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

In this work, the authors present a systematic study on the variation of the structural and the optical properties of GaAsSbN / GaAs single quantum wells ͑SQWs͒ as a function of nitrogen concentration. These SQW layers were grown by the solid source molecular beam epitaxial technique. A maximum reduction of 328 meV in the photoluminescence ͑PL͒ peak energy of GaAsSbN was observed with respect to the reference GaAsSb QW. 8 K and RT PL peak energies of 0.774 eV ͑FWHM of ϳ25 meV͒ and 0.729 eV ͑FWHM of ϳ67 meV͒ ͑FWHM denotes full width at half maximum͒ corresponding to the emission wavelengths of 1.6 and 1.7 m, respectively, have been achieved for a GaAsSbN SQW of N ϳ 1.4%. The pronounced S-curve behavior of the PL spectra at low temperatures is a signature of exciton localization, which is found to decrease from 16 to 9 meV with increasing N concentration of 0.9%-2.5%. The diamagnetic shift of 13 meV observed in the magnetophotoluminescence spectra of the nitride sample with N ϳ 1.4% is smaller in comparison to the value of 28 meV in the non-nitride sample, indicative of an enhancement in the electron effective mass in the nitride QWs. Electron effective mass of 0.065m o has been estimated for a SQW with N ϳ 1.4% using the band anticrossing model.

show abstract

The role of Sb in the MBE growth of (GaIn)(NAsSb)

Cited by 75 publications

References 10 publications

Nitrogen incorporation and optical studies of GaAsSbN∕GaAs single quantum well heterostructures

Nitrogen incorporation and optical studies of GaAsSbN∕GaAs single quantum well heterostructures

Theory and experimental study of surfactant effects on epitaxial growth of compound semiconductors.

Optical studies of molecular beam epitaxy grown GaAsSbN∕GaAs single quantum well structures

Contact Info

Product

Resources

About