The role of point defects in anomalous diffusion of implanted boron in silicon

Abstract

The influence of implantation damage on the anomalous diffusion has been observed by varying the relative positions of the boron profile and damage distribution produced by silicon preimplantation at different energies. It is shown that the anomalous diffusion of implanted boron is caused by the implantation damage rather than the fast diffusing interstitial boron. During annealing, the extended defects acting as sinks for point defects retard the anomalous diffusion in and near the defected band, however, for prolonged annealing they begin dissolving and emitting point defects which support the anomalous diffusion.

Optimization of ion implantation damage annealing by means of high-resolution X-ray diffraction

“…Short-time, high-temperature treatments, such as transient-rapid thermal annealing (T-RTA), are compatible with the requirement of low thermal budget processing [2,3]. Analysis of doping and damage profiles of implanted silicon has been performed using a number of techniques, such as (cross-section) transmission electron microscopy ((X)TEM) [4][5][6][7][8][9], secondary ion mass spectrometry (SIMS) [10][11][12][13], Rutherford backscattering spectrometry (RBS) [14], Secco etching [ 15] C-t measurements [ 16,17] or C-V measurements [16]. Most of these techniques are destructive or require special sample preparation.…”