2018
DOI: 10.1007/s11664-018-6066-3
|View full text |Cite
|
Sign up to set email alerts
|

The Role of Phase Changes in TiO2/Pt/TiO2 Filaments

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
1
0

Year Published

2021
2021
2023
2023

Publication Types

Select...
4

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(2 citation statements)
references
References 22 publications
0
1
0
Order By: Relevance
“…The Pt filaments are completely sandwiched between TiO 2 /SiO 2 layers, thereby the encapsulated Pt is not directly exposed to air during testing. The applied 25 nm thick TiO 2 layers at both sides of the 350 nm thick Pt filament are used to enhance adhesion to the SiO 2 layers and also to prevent the formation of platinum-titan intermetallic phase during the high temperature operation, i.e., it improves the structural stability and the temperature-resistance characteristics of the Pt heater [26]. KOH etching from the back side of the substrate was used for the membrane release.…”
Section: Silicon Mems Microhotplate Platformmentioning
confidence: 99%
“…The Pt filaments are completely sandwiched between TiO 2 /SiO 2 layers, thereby the encapsulated Pt is not directly exposed to air during testing. The applied 25 nm thick TiO 2 layers at both sides of the 350 nm thick Pt filament are used to enhance adhesion to the SiO 2 layers and also to prevent the formation of platinum-titan intermetallic phase during the high temperature operation, i.e., it improves the structural stability and the temperature-resistance characteristics of the Pt heater [26]. KOH etching from the back side of the substrate was used for the membrane release.…”
Section: Silicon Mems Microhotplate Platformmentioning
confidence: 99%
“…Several approaches have been proposed for the mitigation of delamination and recrystallization of noble metal thin films at high temperatures: (1) the deposition of bilayer structures with an adhesion layer (Ti, Ta, Cr, Zr) between the substrate and the conductive layer [17][18][19][20][21][22][23][24] or the use of an oxidizing atmosphere during the initial stage of the noble metal sputtering [25,26], (2) the sputtering of a protective dielectric layer (Si, Al 2 O 3 , Si 3 N 4 , TiO 2 , SiAlON, SiO 2 + Si 3 N 4 ) onto the top surface of metal layer [16,24,[27][28][29][30], (3) alloying platinum with metals that have higher melting point (Ir, Rh) [24,[31][32][33][34], and (4) the incorporation of refractory oxides (ZrO 2 , HfO 2 , Nb 2 O 3 , Y 2 O 3 , RuO 2 ), acting as anchors to stabilize the grain boundaries of the metal phase [24,33,[35][36][37][38]. All these approaches require recrystallization annealing at temperatures exceeding the operating temperature range of thin-film devices [17,39].…”
Section: Introductionmentioning
confidence: 99%