The role of monolithic integration in advanced laser products

Marsh, J.H.

doi:10.1016/j.jcrysgro.2005.12.021

Cited by 9 publications

(3 citation statements)

References 12 publications

(9 reference statements)

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“…In [26] a QW laser with an unpumped (passive) integrated mode filter was studied. Low light absorption in the passive section is achieved by means of the quantum well intermixing technique.…”

Section: Quantum Dot Lasers With An Integrated Mode Filtermentioning

confidence: 99%

Quantum dot lasers with controllable spectral and modal characteristics

Zhukov

Maximov

Gordeev

et al. 2010

Semicond. Sci. Technol.

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Simple analytical expressions for the shape and width of the multi-frequency lasing spectra of quantum dot lasers are derived by using a parabolic approximation of the gain spectrum. A giant nonlinear gain coefficient of 2.5 × 10 −15 cm 3 was estimated from the experimental dependence of the lasing spectrum width on the output power. A monolithic diffraction optical filter was used to suppress lasing of higher-order transverse modes in a quantum dot laser with a relatively broad ridge waveguide. Stable lasing on a fundamental transverse mode is observed with the maximum continuous wave (CW) single-spatial-mode power of 700 mW.

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Section: Quantum Dot Lasers With An Integrated Mode Filtermentioning

confidence: 99%

Quantum dot lasers with controllable spectral and modal characteristics

Zhukov

Maximov

Gordeev

et al. 2010

Semicond. Sci. Technol.

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“…This process can be judiciously used to tune the emission properties of quantum heterostructures as it modifies their band gap and confinement profile, thus their corresponding energy levels. 10 The topic of locally enhanced interdiffusion has been receiving much attention since it can be used to finely tune the optoelectronic properties of heterostructures in specific regions of the sample for monolithic integration of planar waveguides 17 and optoelectronic components. 18 Enhanced intermixing during thermal treatment can be achieved through the localized creation or inclusion of point defects in the structure by using, for example, dielectric capping, 11 ion implantation, [12][13][14][15] or growth at reduced temperatures to introduce grown-in defects ͑GID͒.…”

Section: Introductionmentioning

confidence: 99%

Effects of grown-in defects on interdiffusion dynamics in InAs∕InP(001) quantum dots subjected to rapid thermal annealing

Dion

Desjardins

Shtinkov

et al. 2008

Journal of Applied Physics

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This work investigates the interdiffusion dynamics in self-assembled InAs/ InP͑001͒ quantum dots ͑QDs͒ subjected to rapid thermal annealing in the 600-775°C temperature range. We compare two QD samples capped with InP grown at either optimal or reduced temperature to induce grown-in defects. Atomic interdiffusion is assessed by using photoluminescence measurements in conjunction with tight-binding calculations. By assuming Fickian diffusion, the interdiffusion lengths L I are determined as a function of annealing conditions from the comparison of the measured optical transition energies with those calculated for InP / InAs 1−x P x / InP quantum wells with graded interfaces. L I values are then analyzed using a one-dimensional interdiffusion model that accounts for both the transport of nonequilibrium concentrations of P interstitials from the InP capping layer to the InAs active region and the P-As substitution in the QD vicinity. It is demonstrated that each process is characterized by a diffusion coefficient D ͑i͒ given by D ͑i͒ = D 0 ͑i͒ exp͑−E a ͑i͒ / k B T a ͒. The activation energy and pre-exponential factor for P interstitial diffusion in the InP matrix are E a ͑P-InP͒ = 2.7Ϯ 0.3 eV and D 0 ͑P-InP͒ =10 3.6Ϯ0.9 cm 2 s −1 , which are independent of the InP growth conditions. For the P-As substitution process, E a ͑P-As͒ = 2.3Ϯ 0.2 eV and ͑c o / n o ͒D 0 ͑P-As͒ ϳ 10 −5 −10 −4 cm 2 s −1 , which depend on the QD height and concentration of grown-in defects ͑c o / n o ͒.

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“…The passive waveguides also allow the lasers to overhang the carrier simplifying the attachment of micro-optics within the module [2]. Specific layers are included to reduce the vertical far-field, reducing the numerical aperture of the optics [3].…”

Section: Individually Addressable Laser Arraysmentioning

confidence: 99%