The role of melting temperature and electron-phonon coupling in the formation of clustered vacancy defects from heavy-ion-generated displacement cascades

Robertson, I. M.; Tappin, D.K.; Kirk, M. A.

doi:10.1080/01418619308219370

Cited by 24 publications

(10 citation statements)

References 20 publications

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“…There are insufficient high dose (>0.1 dpa) neutron irradiation data on Ni to determine whether the difference in cluster density between Cu and Ni is maintained in the cascade overlap dose regime. The higher defect cluster production efficiency for Cu has been attributed to thermal spike effects associated with differences in electron-phonon coupling and melting temperature [22,31,32]. The measured defect cluster size in ion and neutron irradiated copper is nearly constant over a wide range of dose levels (10 À5 to 40 dpa) for irradiation near room temperature, with a mean value near 2.5 nm [5,24,33,34].…”

Section: Defect Cluster Productionmentioning

confidence: 89%

Observation and analysis of defect cluster production and interactions with dislocations

Zinkle

Matsukawa

2004

Journal of Nuclear Materials

230

115

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Section: Defect Cluster Productionmentioning

confidence: 89%

Observation and analysis of defect cluster production and interactions with dislocations

Zinkle

Matsukawa

2004

Journal of Nuclear Materials

230

115

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“…Дослідження за низької енергії йонного опромінення [19][20][21][22][23] по-казали, що висока густина кластерів вакансій спостерігається в ГЦК-Cu (у порівнянні з ГЦК-Ni) в широкому діяпазоні температур опромінення. З іншого боку, кількість частини дефектів, які «ви-жили» (кластери та ізольовані точкові дефекти) під час опромінен-ня, була нижчою в ГЦК-Cu у порівнянні з ГЦК-Ni [24][25][26][27].…”

Section: експериментальні дослідження явища просторово-періодичного вunclassified

Physical Kinetics of Redistribution of Point Defects in Irradiated Crystals

Oliinyk

Tatarenko

2012

Usp. Fiz. Met.

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Дано огляд літературних даних експериментальних спостережень самоор-ганізації дисипативних структур у кристалах під опроміненням. Розгляну-то вплив опромінення на стійкість однорідного розподілу густини точкових дефектів та утворення ними дисипативних модульованих структур на по-верхні та в об'ємі твердого тіла. Зазначено теоретичні підходи щодо опису умов утворення таких структур.Literary review of experimental data concerned with the observation of the self-organization of dissipative structures in crystals under irradiation is presented. An influence of irradiation on the stability of the homogeneous distribution of density of point defects and the formation of their dissipative modulated structures on the surface and in the bulk of a solid is considered. Theoretical approaches to the describing of the conditions of formation of such structures are mentioned.Обозреваются литературные данные экспериментальных наблюдений са-моорганизации диссипативных структур в кристаллах при облучении. Рас-смотрено влияние облучения на устойчивость однородного распределения плотности точечных дефектов и образования ими диссипативных модули-рованных структур на поверхности и в объёме твёрдого тела. Отмечены теоретические подходы к описанию условий образования таких структур.Ключові слова: опромінення, вакансії, нестійкість, самоорганізація, диси-пативна структура, модульована структура, нанопори, надґратниця.

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“…This corresponds to an average obstacle spacing on the dislocation glide plane of N 100 nm, which is comparable to typical estimates of dislocation source lengths [ 132,1331. Therefore, one plausible microstructural criterion for dislocation channeling is that the distance between the shearabie (a c 1) obstacles must be less than or comparable to most of the available dislocation source lengths. Further support for this hypothesis comes from observations [134] in Ni and Au that at moderate doses it is sometimes possible for dislocation channeling to occur at low strains (with corresponding low stresses), whereas cell formation occurs at high strains (with corresponding higher stresses due to work hardening).…”

Section: Radiation Hardening In Fcc Metalsmentioning

confidence: 99%

“…(1) and (2), the critical fluence for the transition between linear and square root dependence for the defect cluster accumulation depends on the fraction of freely migrating interstitials ( A ) and on the permanent sink strength. Figure 2 summarizes most of the available TEM data [30] on pure Cu irradiated with neutrons at temperatures below recovery stage V (-150°C).…”

Section: 1mentioning

confidence: 99%

“…(1) and (2), the fraction of freely migrating interstitials is readily obtained from the y-intercept of a plot of d t / N vs. N ( + t TEM and electrical resistivity data on 14-MeV neutron irradiated Cu summarized in Fig. 1 provides an estimate for the freely migrating interstitial fraction off; = 10% and 12%, respectively [26,57,58] relative to the Norgett-Robinson-Torrens (NRT) [59] displacement value.…”

Section: 11mentioning

confidence: 99%

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Fundamental radiation effects parameters in metals and ceramics

Zinkle

1999

Radiation Effects and Defects in Solids

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Several fundamental aspects of defect cluster accumulation in irradiated ceramics and face centered cubic metals are rehewed, with particular emphasis on radiation hardening and the microstructural evolution in Cu observed by transmission electron microscopy (TEM). At temperatures where interstitials are mobile (> 50 K i n Cu), the defect cluster density in pure Cu is initially proportional to the dose and exhibits a square root dose dependence above -displacements per atom. This fluence dependence (determined from electrical resistivity and TEM studies) helps to resolve a long-standing controversy on the fluence dependence of radiation hardening. The fraction of freely migrating interstitials in copper irradiated with 14MeV neutrons at room temperature I S -11%. The activation energy for annealing stage V (stacking fault tetrahedra evaporation) in neutron-irradiated copper has been measured to be 0.84eV. Some features of the point defect accumulation behavior in ceramics are found to be very similar to the trends observed in pure Cu, despite the obvious differences in the physical properties of these two types of materials. Finally, microstructural evidence for some processes unique to nonmetals are summarized, particularly ionization induced diffusion.

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The role of melting temperature and electron-phonon coupling in the formation of clustered vacancy defects from heavy-ion-generated displacement cascades

Cited by 24 publications

References 20 publications

Observation and analysis of defect cluster production and interactions with dislocations

Observation and analysis of defect cluster production and interactions with dislocations

Physical Kinetics of Redistribution of Point Defects in Irradiated Crystals

Fundamental radiation effects parameters in metals and ceramics

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