The Role of Interface Dynamics on the Reliability Performance of BEOL Integrated Ferroelectric HfO₂ Capacitors

Reliability Improvement from La2O3 Interfaces in Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors

“…In an extreme case, this bias field can even become so strong that it permanently pins the domains in one direction and makes it unswitchable to the opposite one when a constant switching field is applied. [34] In Figure 8a,b, the difference in shifting of the respective I(E) curves for a cycled and pristine capacitor can be observed. The main difference is the broadness of the initial switching peak for the pristine case.…”

“…The details about the measured polarization states, that is, new same state (NSS), opposite state (OS), and same state (SS), and the corresponding measurement procedure can be found in literature. [ 19 ] Before presenting the experimental results of the retention test, it is important to mention that the data retention loss in HfO 2 ‐based ferroelectric materials is mainly caused by two independent physical mechanisms: [ 34 ] a built‐in bias imprint effect ( Figure a,b) and depolarization field induced back‐switching. Thermal depolarization can also take place but is less significant under the tested conditions.…”

“…In an extreme case, this bias field can even become so strong that it permanently pins the domains in one direction and makes it unswitchable to the opposite one when a constant switching field is applied. [ 34 ]…”

The Electrode‐Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO‐Based Ferroelectric Capacitors

“…Field cycling endurance and polarization have already been well documented in HZO with TiN electrodes. [25] To better understand field cycling degradation and imprint shift, impedance spectroscopy was implemented in this work during reliability measurements. Impedance was measured after a given number of field cycles or time intervals, and the results were fitted to a two resistor/capacitor (RC)-element analysis model (as shown in Figure 2 and described elsewhere [26,27] ).…”

Role of Defects in the Breakdown Phenomenon of Al1–xScxN: From Ferroelectric to Filamentary Resistive Switching

“…In this context, aluminum scandium nitride (Al 1– x Sc x N) with its large P r (>80 μC/cm 2 ) is a promising material for future applications, even in harsh environments due to its excellent thermal stability. , As a result of the high coercive fields ( E c ) in Al 1– x Sc x N, very thin films are required to switch the ferroelectric layer between the two stable states (nitrogen (N)-polar and metal (M)-polar) at reasonable voltages for low-power memory applications. , Recent reports demonstrate that ferroelectric switching is achievable in 5 nm thick films with voltages below 6 V. − However, because E c is close to the breakdown field ( E BD ) of the material, the cycling endurance still remains a critical reliability concern to address . The reported cycling endurance for Al 1– x Sc x N capacitors is far below the 10 13 cycles achievable in doped hafnia and lead zirconate titanate (PZT). − The two major reliability aspects that determine capacitor endurance are the fatigue effect, which describes the reduction in P r with electric field cycling, and breakdown of the ferroelectric film. In Al 1– x Sc x N, the fatigue effect was explained by depolarization fields and/or domain pinning, while no conclusive evidence about the breakdown has emerged so far. , …”