The role of interactions between abrasive particles and the substrate surface in chemical-mechanical planarization of Si-face 6H-SiC

Chen, Guomei; Zhang, Ni; Bai, Yawen; Zhao, Yongwu

doi:10.1039/c6ra27508g

Cited by 41 publications

(29 citation statements)

References 47 publications

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“…On the other hand, electrostatic double-layer forces which are generally considered to be independent of the surface nanoscale roughness (for RMS roughness <20 nm) are given by , where ϵ is the permittivity of the fluid medium (water), k is the reciprocal of the Debye length, and ϕ p and ϕ s are the surface potentials of the particle and the substrate, respectively. For our calculations, we have used the values of the Debye length , and the surface potential of the substrate from the literature. The zeta potential for the colloidal particles was found to be −42.8 mV from measurements.…”

Section: Surface Force Analysis At the Nanoscalementioning

confidence: 99%

Nanoscale Topographical Fluctuations: A Key Factor for Evaporative Colloidal Self-Assembly

Lohani

Sarkar

2018

Langmuir

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This work investigates the role of surface parameters such as the nanoscale roughness, topography, and skewness of smooth and rough Si surfaces in the shape of patterns left by evaporating colloidal droplets of spherical polystyrene particles. The droplet contact angle, colloidal deposition pattern, crack density, and rim growth velocities are experimentally evaluated for varying roughness. The contact angle and rim growth rate are found to be more for rough surfaces in comparison to smooth ones. Roughness also helps in reducing stress in the drying droplets, thereby impeding the process of crack formation as exemplified by the experimental results. The altered Derjaguin−Landau−Verwey− Overbeek (DLVO) interactions emerging from the contribution of nanoscale roughness are theoretically evaluated for each differently rough substrate−particle combination. The forces have been calculated by considering large-and small-scale roughness parameters of the experimental surfaces. The experimental findings have been duly corroborated by theoretical estimates. Finally, it is observed that the skewness of the surface and the small-scale asperity radius bear a correlation with the DLVO forces and subsequently with the ring deposit pattern. The present understanding of the influence of surface fluctuations on evaporative self-assembly would enable one to choose the right topographic surface for particular applications.

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Section: Surface Force Analysis At the Nanoscalementioning

confidence: 99%

Nanoscale Topographical Fluctuations: A Key Factor for Evaporative Colloidal Self-Assembly

Lohani

Sarkar

2018

Langmuir

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“…The Si 2p XPS spectra in Figure 2A can be fitted into three peaks with the value of 100.59, 101.29, and 102.53 eV, corresponding to SiC, SiCO, and SiC x O y , respectively 20‐22 . In Figure 2B, the peaks near 282.83, 284.83, and 286.30 eV are consistent with SiC, C–C, and C–O binding energy, respectively 20‐22 . The O 1s XPS spectra in Figure 2C can be fitted into two peaks with a value of 532.03 and 534.08 eV, attributed to SiCO/SiC x O y and absorbed oxygen, respectively 23 …”

Section: Resultsmentioning

confidence: 91%

“…The w 4f XPS spectra in Figure 5A can be fitted into four peaks with the value of 31.38, 32.38, 35.58, and 36.61 eV, corresponding to W (0) metal 4f2/7, WC x O y , WO 3 , and W (0) metal 5p2/3, respectively 34‐36 . The Si 2p XPS spectra in Figure 5B can be divided into three peaks with the value of 99.98, 101.68, 102.89 eV, in consistence with SiC, SiCO, and SiCO x , respectively 20‐22 . The C 1s XPS spectra in Figure 5C give rise to peaks at 282.93, 284.85, 286.48, and 288.19 eV, attributed to SiC, C–C, C–O, and CO, respectively 20‐22 .…”

Section: Resultsmentioning

confidence: 99%

“…[24][25][26] The Si 2p XPS spectra in Figure 3B can be matched with three peaks with the value of 100.08, 101.46, and 102.18 eV, corresponding to SiC, SiCO, and SiCO x , respectively. [20][21][22] The C 1s XPS spectra in Figure 3C give rise to peaks at 282.48, 284.83, 286.46, and 288.68 eV, corresponding to NbC, SiC, C-C, C-O, and C O, respectively. 22,27 The O 1s XPS spectra in Figure 3D can be fitted into two peaks with value of 530.02, 530.66, 531.83, and 533.42 eV, attributed to NbO, NbO 2 , SiCO/SiCO x , and absorbed oxygen, respectively.…”

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confidence: 99%

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Effect of Nb, Ti, and W ion implantation on surface properties and cell compatibility of silicon carbide

Zhao

2022

Surface & Interface Analysis

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Silicon carbide is considered as a bio‐inert semiconductor material; consequently, it has been proposed for potential applications in human body implantation. In this study, we study the effect of implanting different metal ions on the surface properties of silicon carbide single crystal. The valence states of the elements and the surface roughness of implanted SiC were studied using X‐ray photoelectron spectroscopy and atomic force microscope, respectively. Osteoblastic MG‐63 cells were utilized to characterize the cytocompatibility of ion implanted SiC. The results show that after Nb ion implantation on the SiC surface, it mainly exists in the form of Nb–C bond, Nb–O bond, and a small amount of metallic niobium. The titanium implanted on SiC primarily forms Ti‐C bond and Ti‐O bond. The tungsten implanted on SiC mostly presents as metallic tungsten and W–O bond. The roughness of silicon carbide single crystal is improved by ion implantation of all three metal ions. Ion implantation of titanium and niobium can improve the cell compatibility and hydrophilicity of silicon carbide, whereas ion implantation of tungsten reduces the cell compatibility and hydrophilicity of silicon carbide.

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“…For the purpose of the current study, point. In the case of SiO 2 the ζ-potential is not dependent on whether it is in the form of quartz, thin layer or nanoparticles [58]. In contrast, for Al 2 O 3 it has a strong dependence on whether it is in the form of sapphire (isoelectric point pH ∼ 4.5), thin film (isoelectric point pH ∼ 6) or nanoparticles (isoelectric point pH ∼ 9) [59], which is similar to what is seen for gallium oxide.…”

Section: Zeta Potential Measurementmentioning

confidence: 99%

Surface zeta potential and diamond growth on gallium oxide single crystal

Mandal,

Arts,

Knoops

et al. 2021

Preprint

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In this work a strategy to grow diamond on β-Ga 2 O 3 has been presented. The ζ-potential of the β-Ga 2 O 3 substrate was measured and it was found to be negative with an isoelectric point at pH ∼ 4.6. The substrates were seeded with mono-dispersed diamond solution for growth of diamond. The seeded substrates were etched when exposed to diamond growth plasma and globules of gallium could be seen on the surface. To overcome the problem ∼100 nm of SiO 2 and Al 2 O 3 were deposited using atomic layer deposition. The nanodiamond seeded SiO 2 layer was effective in protecting the β-Ga 2 O 3 substrate and thin diamond layers could be grown. In contrast Al 2 O 3 layers were damaged when exposed to diamond growth plasma. The thin diamond layers were characterised with scanning electron microscopy and Raman spectroscopy. Raman spectroscopy revealed the diamond layer to be under compressive stress of 1.3 -2.8GPa.

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The role of interactions between abrasive particles and the substrate surface in chemical-mechanical planarization of Si-face 6H-SiC

Abstract: The interactions between abrasive particles and the wafer surface play a significant role in the chemical-mechanical planarization (CMP) process.

Cited by 41 publications

References 47 publications

Nanoscale Topographical Fluctuations: A Key Factor for Evaporative Colloidal Self-Assembly

Nanoscale Topographical Fluctuations: A Key Factor for Evaporative Colloidal Self-Assembly

Effect of Nb, Ti, and W ion implantation on surface properties and cell compatibility of silicon carbide

Surface zeta potential and diamond growth on gallium oxide single crystal

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