Abstract:The orientation of antimony sulfide (Sb2S3) significantly affects the performance of the Sb2S3 thin film solar cells owing to its intrinsic quasi one-dimensional crystal structure. Producing Sb2S3 film with [hk1]...
“…This improvement led to an increased V OC of the Sb 2 S 3 -S-TF device. 43 Subsequently, electrochemical impedance spectroscopy (EIS) was used to investigate the effect of the sulfurization treatment on the internal charge transfer process of the device. The Nyquist plots and the fitted equivalent electronic circuit diagram of the solar cells are illustrated in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…In previously reported studies, the as-prepared lms were generally annealed on a hot plate in a glove box lled with nitrogen (N 2 ) to improve their crystallinity. 31,[40][41][42][43][44] Here, we developed a new annealing method that introduced sulfur vapor into the annealing environment of the prefabricated lms, with the temperature ramping up slowly. Pressure played a signicant role in the sulfurization effect in this process.…”
Section: Advantages Of Negative-pressure Sulfurizationmentioning
Herein, we developed a new sulfurization method to obtain S-rich Sb2S3, which passivated the internal deep-level defects of the film. Finally, a record open-circuit voltage of 805 mV was achieved, which is the highest value for Sb2S3 solar cells.
“…This improvement led to an increased V OC of the Sb 2 S 3 -S-TF device. 43 Subsequently, electrochemical impedance spectroscopy (EIS) was used to investigate the effect of the sulfurization treatment on the internal charge transfer process of the device. The Nyquist plots and the fitted equivalent electronic circuit diagram of the solar cells are illustrated in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…In previously reported studies, the as-prepared lms were generally annealed on a hot plate in a glove box lled with nitrogen (N 2 ) to improve their crystallinity. 31,[40][41][42][43][44] Here, we developed a new annealing method that introduced sulfur vapor into the annealing environment of the prefabricated lms, with the temperature ramping up slowly. Pressure played a signicant role in the sulfurization effect in this process.…”
Section: Advantages Of Negative-pressure Sulfurizationmentioning
Herein, we developed a new sulfurization method to obtain S-rich Sb2S3, which passivated the internal deep-level defects of the film. Finally, a record open-circuit voltage of 805 mV was achieved, which is the highest value for Sb2S3 solar cells.
“…Wu et al 81 investigated the structure–property–performance relationship in Sb 2 S 3 thin-film solar cells via the in-depth characterization of the crystal orientation, carrier transport and device performance. The study revealed that by merely controlling the post-annealing process, the grain growth, orientation and defect physics can be regulated.…”
Section: Defects In Sb2x3 Materials and Their Implication In The Perf...mentioning
confidence: 99%
“…It was concluded that the sensitive manipulation of the reaction kinetics via the additive-assisted CBD technique offers an effective route for the fabrication of high-quality Sb 2 Se 3 films and high-PCE (10.57%) solar cells. Wu et al 81 investigated the structure-property-performance relationship in Sb 2 S 3 thin-film solar cells via the in-depth characterization of the crystal orientation, carrier transport and device performance. The study revealed that by merely controlling the post-annealing process, the grain growth, orientation and defect physics can be regulated.…”
Antimony chalcogenides (Sb2X3, X = S and Se) are intriguing materials for flexible/wearable, lightweight, and tandem photovoltaic devices. This work highlights the deep-level defect engineering strategies for Sb2X3 thin-film solar cells.
“…Secondly, it was found that the growth orientation plays an important role in determining the PCEs of these two crystals, mostly due to their quasi one-dimensional (Q1D) structures. 15,21,[28][29][30][31][32] There is still a lack of basic investigation on the adsorption and diffusion properties of the intrinsic atoms on surfaces, which is the rst step in understanding the defect properties and controlling the growth orientation.…”
Complicated potential energy surfaces and diffusion properties are present on the (001) and (010) surfaces of Sb2Se3 and Sb2S3 due to their low symmetry. Growth mechanism can be accordingly predicted and compared with the experimental results.
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