In photoelectrochemical cells (PECs) the photon-to-current
conversion
efficiency is often governed by carrier transport. Most metal oxides
used in PECs exhibit thermally activated transport due to charge localization
via the formation of polarons or the interaction with defects. This
impacts catalysis by restricting the charge accumulation and extraction.
To overcome this transport bottleneck nanostructuring, selective doping
and photothermal treatments have been employed. Here we demonstrate
an alternative approach capable of directly activating localized carriers
in bismuth vanadate (BiVO4). We show that IR photons can
optically excite localized charges, modulate their kinetics, and enhance
the PEC current. Moreover, we track carriers bound to oxygen vacancies
and expose their ∼10 ns charge localization, followed by ∼60
μs transport-assisted trapping. Critically, we demonstrate that
localization is strongly dependent on the electric field within the
device. While optical modulation has still a limited impact on overall
PEC performance, we argue it offers a path to control devices on demand
and uncover defect-related photophysics.