The role of charge carriers in the memory effect in the incommensurate phase of the semiconducting ferroelectric Sn2P2Se6

Maior, M. M.; Rasing, T.H.M.; Eijt, S.W.H.; Loosdrecht, P.H.M. van; Kempen, H. van; Molnar, S.B.; Vysochanskiǐ, Yu. M.; Motrij, S.F.; Slivka, V. Yu.

doi:10.1088/0953-8984/6/50/027

Cited by 7 publications

(7 citation statements)

References 6 publications

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“…It seems natural to suggest that a model of extremely mobile defects with high concentration could help in understanding these phenomena also. Below we propose a mechanism explaining the results obtained, based on theoretical investigations of the role of charge carriers in the memory effect and phase transitions in ferroelectric semiconductors [13][14][15][16].…”

Section: Discussionmentioning

confidence: 93%

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The effect of impurities on the phase transitions in the ferroelectric semiconductors TlInS₂and TlGaSe₂

Babaev

Başaran

Mammadov

et al. 2005

J. Phys.: Condens. Matter

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The temperature dependences of the dielectric constants of the ferroelectric semiconductors TlInS2 and TlGaSe2 have been studied following their annealing within the incommensurate phase. Unusual memory effects accompanied by both a remarkable inflection of the temperature dependence curves in the incommensurate phase and various shifts of the incommensurate (Ti) and commensurate (Tc) phase transition temperatures have been revealed in both crystals. The observed effects are explained on the basis of a defect density wave model taking into account the interaction of modulation waves with charge carriers localized at impurity states. The thermally activated population of these states during the heating or cooling processes is responsible for the changes of the phase transition temperatures.

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Section: Discussionmentioning

confidence: 93%

“…The study of the role of a charge carrier subsystem in the memory effects in ferroelectric semiconductors with incommensurate phases is of a great interest. In a series of works [13][14][15] it was shown that these phenomena are greatly influenced by the charge carriers localized at defect states and interacting with a modulation wave.…”

Section: Discussionmentioning

confidence: 99%

The effect of impurities on the phase transitions in the ferroelectric semiconductors TlInS₂and TlGaSe₂

Babaev

Başaran

Mammadov

et al. 2005

J. Phys.: Condens. Matter

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“…A paraelectric-ferroelectric transition has been identified in the semiconducting chalcogenides M 2 P 2 X 6 (M =Sn, Pb and X=S, Se), and well studied by a variety of methods [71][72][73][74][75][76]. Further interest was stimulated by the observation of a photovoltaic effect in Sn 2 P 2 S 6 crystals [77].…”

Section: M2p2(sse)6 Chalcogenidesmentioning

confidence: 99%

Integration of first-principles methods and crystallographic database searches for new ferroelectrics: Strategies and explorations

Bennett¹,

Rabe²

2012

Journal of Solid State Chemistry

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In this concept paper, the development of strategies for the integration of first-principles methods with crystallographic database mining for the discovery and design of novel ferroelectric materials is discussed, drawing on the results and experience derived from exploratory investigations on three different systems: (1) the double perovskite Sr(Sb 1/2 Mn 1/2 )O3 as a candidate semiconducting ferroelectric; (2) polar derivatives of schafarzikite M Sb2O4; and (3) ferroelectric semiconductors with formula M2P2(S,Se)6. A variety of avenues for further research and investigation are suggested, including automated structure type classification, low-symmetry improper ferroelectrics, and highthroughput first-principles searches for additional representatives of structural families with desirable functional properties.

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“…Electronic mechanisms may also be of importance for the transitions in the semiconductors Sn 2 P 2 (S 1−x Se x ) 6 . For example, the memory effect [7] observed in the incommensurate phase has been shown to result from the trapping of charge carriers at modulated impurity levels. A similar mechanism is likely to be responsible for the induction by temperature stabilization of an intermediate, probably incommensurate, phase in Sn 2 P 2 S 6 , which normally undergoes a direct paraelectric-to-ferroelectric transition.…”

Section: Introductionmentioning

confidence: 99%

Soft modes and phonon interactions in studied by means of neutron scattering

Eijt

Currat

Lorenzo

et al. 1998

J. Phys.: Condens. Matter

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This paper presents an inelastic neutron scattering study of the proper ferroelectric and elastic neutron scattering results on the satellite diffraction pattern which characterizes the modulated phase. The temperature dependences of the satellite intensities and modulation wavevector are in fair agreement with results from previous x-ray experiments. Close to the incommensurate-to-ferroelectric transition temperature , an unexpected intensity overshoot is observed, similar to that seen in birefringence and dilatation experiments. The relationship between the lattice dynamics and the observed phase transition sequence is examined. The dispersion of the ferroelectric soft optic phonon (-polarization) and of the acoustic phonons is followed along the and -directions. In the ferroelectric phase, the TO mode shows a considerable softening as the incommensurate phase is approached from below. In the paraelectric and incommensurate phases, the response from the TO (-polarization) and TA ( strain) branches has been investigated via a series of constant-q scans in the -direction (approximately the modulation wavevector direction). The combined inelastic line-shapes, as observed in a number of non-equivalent Brillouin zones, could all be analysed in terms of a coupled-mode damped harmonic oscillator model. In addition, a diverging, resolution-limited, central peak is observed close to . It is suggested that the TO-TA coupling lies at the origin of the incommensurate instability. A phenomenological free energy is developed, in the continuum approximation, in which the TO-TA interaction is included via a pseudo-Lifshitz term of the type .

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The role of charge carriers in the memory effect in the incommensurate phase of the semiconducting ferroelectric Sn₂P₂Se₆

Cited by 7 publications

References 6 publications

The effect of impurities on the phase transitions in the ferroelectric semiconductors TlInS₂and TlGaSe₂

The effect of impurities on the phase transitions in the ferroelectric semiconductors TlInS₂and TlGaSe₂

Integration of first-principles methods and crystallographic database searches for new ferroelectrics: Strategies and explorations

Soft modes and phonon interactions in studied by means of neutron scattering

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The role of charge carriers in the memory effect in the incommensurate phase of the semiconducting ferroelectric Sn2P2Se6

Cited by 7 publications

References 6 publications

The effect of impurities on the phase transitions in the ferroelectric semiconductors TlInS2and TlGaSe2

The effect of impurities on the phase transitions in the ferroelectric semiconductors TlInS2and TlGaSe2

Integration of first-principles methods and crystallographic database searches for new ferroelectrics: Strategies and explorations

Soft modes and phonon interactions in studied by means of neutron scattering

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Product

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The role of charge carriers in the memory effect in the incommensurate phase of the semiconducting ferroelectric Sn₂P₂Se₆

The effect of impurities on the phase transitions in the ferroelectric semiconductors TlInS₂and TlGaSe₂

The effect of impurities on the phase transitions in the ferroelectric semiconductors TlInS₂and TlGaSe₂