The role of carrier gas flow in roll-to-roll AP-PECVD synthesized silica moisture barrier films

Meshkova, A.S.; Elam, Fiona M.; Starostin, Sergey A.; Sanden, M.C.M. van de; Vries, H.W. de

doi:10.1016/j.surfcoat.2018.02.010

Cited by 9 publications

(9 citation statements)

References 48 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As a consequence the mean collision height cannot follow the surface asperities and shadowing prevails in the surface growth, thus developing a granular microstructure. Moreover, the lateral grain growth that results in a grainlike microstructure in the high LDR region can lead to the formation of overhangs, thus forming a more porous structure as previously observed in [15]. Consequently the remedy for depositing smooth films is to reduce the probability of protrusions by reducing either the deposition time or the maximum LDR.…”

Section: Second Order Statisticsmentioning

confidence: 90%

Variable roughness development in statically deposited SiO₂ thin films: a spatially resolved surface morphology analysis

Meshkova

Starostin

Sanden

et al. 2018

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

For the first time a systematic analysis of the growth front evolution of statically deposited silica films in an atmospheric pressure-plasma enhanced chemical vapour deposition (AP-PECVD) reactor was carried out. The growth front evolution was studied as a function of time and position in the reactor. Focussed beam spectroscopic ellipsometry was used to assess the local film growth rate and atomic force microscopy (AFM) to analyse the surface roughness development. Spatially resolved AFM analysis showed a strong dependence of the rms roughness on the position, and consequently on the thickness and local deposition rate (LDR), in the reactor. Time resolved surface morphology analysis at two specific positions at high and low LDR indicated different growth exponents β = 0.33 and β = 0.11, respectively. From the analysis of the static roughness development in the AP-PECVD reactor certain limitations on the deposition time and the maximum LDR for dynamic or web rolled deposition conditions have been elucidated. Moreover, the system is characterized by a set of roughness exponents α loc = 0.9, α s = 1.6 and global roughness exponent α = 2.3. The different values of α indicate an anomalous scaling behaviour of the system whereas different growth exponents β suggest a breakdown of the anti-shadowing mechanism.

show abstract

Section: Second Order Statisticsmentioning

confidence: 90%

Variable roughness development in statically deposited SiO₂ thin films: a spatially resolved surface morphology analysis

Meshkova

Starostin

Sanden

et al. 2018

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Considering their broad range of applications, including antifogging capacity, corrosion protection ability, biocompatibility, moisture barrier and water-repellent properties [3][4][5][6][7][8][9][10][11][12][13], organosilicon thin films have been extensively researched, and the parameters controlling their deposition kinetics, structure, and morphology have been widely investigated. Based on the available literature, the so-called Yasuda's parameter, a parameter equivalent to the ratio of discharge power to precursor flow rate (W/F), is an important factor affecting plasma-deposited thin films [14].…”

Section: Introductionmentioning

confidence: 99%

Kinetics driving thin-film deposition in dielectric barrier discharges using a direct liquid injector operated in a pulsed regime

Cacot¹,

Carnide²,

Kahn³

et al. 2022

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

This work investigates the effects of process parameters on thin-film deposition by Direct Liquid Injection in a low-frequency Dielectric Barrier Discharge (DBD). The precursor, hexamethyldisiloxane (HMDSO), is introduced as micrometer-size liquid droplets with nitrogen carrier gas in a pulsed mode and the discharge is produced at atmospheric pressure in a pulsed regime. No significant deposit is observed during plasma-off time and outside the discharge region. Despite the pulsed injection, this reveals that the precursor content in the plasma zone remains constant over much longer time scales and that thin-film deposition results from droplets charging and their transport towards the dielectrics by the low-frequency electric field. Over the range of experimental conditions investigated, it is found that pulsed, aerosol-assisted plasma deposition is limited by the amount of energy provided to precursor droplets, and not by precursor insufficiency.

show abstract

“…In this paper, we perform spectroscopic ellipsometry measurements on exfoliated micron-scale vdW flakes with our recently developed Fourier imaging spectroscopic micro-ellipsometry method . Our spectroscopic micro-ellipsometer (SME) integrates spectroscopic ellipsometry into generic optical microscopy configuration, working in an on-axis configuration with a sub-5 μm lateral resolution (one order-of-magnitude higher compared to focused-beam spectroscopic ellipsometers). , Its high data acquisition rate allows recording broadband ellipsometric data at multiple angles of incidence simultaneously at a given lateral position within a few seconds, making it at least three orders-of-magnitude faster compared to imaging ellipsometers, improving the practically achievable level of sensitivity and accuracy in process.…”

Section: Introductionmentioning

confidence: 99%

Thickness Mapping and Layer Number Identification of Exfoliated van der Waals Materials by Fourier Imaging Micro-Ellipsometry

et al. 2023

View full text Add to dashboard Cite

As performance of van der Waals heterostructure devices is governed by the nanoscale thicknesses and homogeneity of their constituent mono-to few-layer flakes, accurate mapping of these properties with high lateral resolution becomes imperative. Spectroscopic ellipsometry is a promising optical technique for such atomically thin-film characterization due to its simplicity, noninvasive nature and high accuracy. However, the effective use of standard ellipsometry methods on exfoliated micron-scale flakes is inhibited by their tens-of-microns lateral resolution or slow data acquisition. In this work, we demonstrate a Fourier imaging spectroscopic micro-ellipsometry method with sub-5 μm lateral resolution and three orders-of-magnitude faster data acquisition than similar-resolution ellipsometers. Simultaneous recording of spectroscopic ellipsometry information at multiple angles results in a highly sensitive system, which is used for performing angstrom-level accurate and consistent thickness mapping on exfoliated mono-, bi-and trilayers of graphene, hexagonal boron nitride (hBN) and transition metal dichalcogenide (MoS 2 , WS 2 , MoSe 2 , WSe 2 ) flakes. The system can successfully identify highly transparent monolayer hBN, a challenging proposition for other characterization tools. The optical microscope integrated ellipsometer can also map minute thickness variations over a micron-scale flake, revealing its lateral inhomogeneity. The prospect of adding standard optical elements to augment generic optical imaging and spectroscopy setups with accurate in situ ellipsometric mapping capability presents potential opportunities for investigation of exfoliated 2D materials.

show abstract

The role of carrier gas flow in roll-to-roll AP-PECVD synthesized silica moisture barrier films

Cited by 9 publications

References 48 publications

Variable roughness development in statically deposited SiO₂ thin films: a spatially resolved surface morphology analysis

Variable roughness development in statically deposited SiO₂ thin films: a spatially resolved surface morphology analysis

Kinetics driving thin-film deposition in dielectric barrier discharges using a direct liquid injector operated in a pulsed regime

Thickness Mapping and Layer Number Identification of Exfoliated van der Waals Materials by Fourier Imaging Micro-Ellipsometry

Contact Info

Product

Resources

About

The role of carrier gas flow in roll-to-roll AP-PECVD synthesized silica moisture barrier films

Cited by 9 publications

References 48 publications

Variable roughness development in statically deposited SiO2 thin films: a spatially resolved surface morphology analysis

Variable roughness development in statically deposited SiO2 thin films: a spatially resolved surface morphology analysis

Kinetics driving thin-film deposition in dielectric barrier discharges using a direct liquid injector operated in a pulsed regime

Thickness Mapping and Layer Number Identification of Exfoliated van der Waals Materials by Fourier Imaging Micro-Ellipsometry

Contact Info

Product

Resources

About

Variable roughness development in statically deposited SiO₂ thin films: a spatially resolved surface morphology analysis

Variable roughness development in statically deposited SiO₂ thin films: a spatially resolved surface morphology analysis