The role of carboxylic acids on nanoparticle removal in post CMP cleaning process for cobalt interconnects

Zhang, Lifei; Lu, Xinchun; Busnaina, Ahmed

doi:10.1016/j.matchemphys.2021.125199

Cited by 14 publications

(4 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The carboxylic acid adheres to the Co oxides layer and the longer carboxyl chains generates a high electrostatic repulsive force which prevents the silica from adhering to it. 188 Incorporation of physical cleaning (brush scrubbing) assisted by chemical action increases the cleaning efficiency of Co and Cu metals. 189 CMP of Ruthenium (Ru) (another emerging barrier metal for Cu interconnect) induces contaminants of particle specially abrasives on its surface.…”

Section: Application-based Post-cmp Cleaningmentioning

confidence: 99%

Review—Post-Chemical Mechanical Planarization Cleaning Technology

Hazarika,

Gupta,

Rajaraman

2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Chemical mechanical planarization (CMP), a commonly employed process for attaining local and global planarization in integrated circuits fabrication, leaves contaminants and defects on the surface polished. Due to the miniaturization of devices, new materials/ processes for the fabrication of IC circuits are considered, introducing new post-CMP issues. As such, understanding of post-CMP cleaning process is critical to choose an appropriate method for the given material. Here, the types of contaminants and defects generated during the post-CMP process and the issues related to it are discussed. The different physical and chemical cleaning methods employed in the post-CMP cleaning process to eradicate these defects are elucidated.In particular, the PVA brushing method, which is currently preferred, is elaborated upon in detail. The various chemistries, including the newly suggested ones in recent years for cleaning different substrates, are summarized. The post-CMP cleaning methods for various materials such as Cu, Al, W, Co, Ru, InGaAs, Ge, and SiO2 are mainly addressed here. This review also provides the direction of progress for the post-CMP cleaning process in terms of evolution of new techniques and chemistries for the next generation of materials.

show abstract

Section: Application-based Post-cmp Cleaningmentioning

confidence: 99%

Review—Post-Chemical Mechanical Planarization Cleaning Technology

Hazarika,

Gupta,

Rajaraman

2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…It was shown that carboxylic anions can be adsorbed on the oxide layer of Al-alloy. 43 The adsorption of carboxylic anions on the surface of the Al substrate may serve as protection layer which can buffer the mechanical attack of silica abrasive and improve surface quality. These negatively charged anions can also adsorb on the formed alumina nanoparticles which can repel negatively charged silica abrasive nanoparticles and facilitate the dispersion and stabilization of formed alumina nanoparticles in the CMP process.…”

Section: Structurementioning

confidence: 99%

Structure-Performance Relationships of Complexing Agents on the Chemical Mechanical Polishing of 6063 Aluminum Alloy

Xi²,

Jiang³

et al. 2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Aluminum alloy has wide applications in many industries due to its unique properties. Chemical mechanical polishing (CMP) is commonly used to treat aluminum alloy to generate mirror-finish surface. In this study, the effects of pH and H2O2 concentration on the CMP of 6063 aluminum alloy were studied. Better CMP performance was obtained in basic media with 1.0 wt% H2O2. Moreover, complexing agents with different structures and functional groups were evaluated for the CMP of Al-alloy, and their structure-performance relationship was systematically studied. It was found that complexing power, steric hindrance, and electrostatic repulsion of complexing agents were important factors determining material removal rate and surface roughness. The complexing agent with high complexing power can favor the dissolution and Al substrate. The complexing agent with large steric hindrance and high charge density can form a stable boundary layer on the surface of substrate and improve its dispersion ability, thereby improving MRR and surface quality. In addition, the amino functional groups of complexing agents exist in the form of neutral molecules at pH 10, which is inferior to carboxyl complexing agents due to their poor static repulsion. X-ray photoelectron spectroscopy analysis confirmed the anchoring of carboxylate anions on the sample surface.

show abstract

“…The citrate-coated NPs may react with H + from organic acids of ARE solution and release Fe and Co ions, meanwhile, the ions released combine with the carboxylic groups associated such as malate and succinate. 60,61 According to the speciation analysis carried out, the predominant species formed by the elements released from the NPs by the ARE action were the complex of Fe and Co with malate (92% of Fe as Fe-malate + , 71% of Co as CoH-malate (aq) , and 14% of Co as CoH-malate + ). Meanwhile, a small portion of Fe and Co species is the complex formed with the succinate organic ligand (8% of Fe released as Fe-succinate, 2% and 1% of Co released as Cosuccinate + and Co-succinate (aq) , respectively).…”

Section: Nanoparticle Characterization and Its Dissolution By The Eff...mentioning

confidence: 99%