The role of auger recombination in inas 1.3-μm quantum-dot lasers investigated using high hydrostatic pressure

Marko, Igor P.; Andreev, A. D.; Adams, A.R.; Krebs, R.; Reithmaier, J.P.; Forchel, A.

doi:10.1109/jstqe.2003.819504

Cited by 64 publications

(81 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, there have been few reports on the temperature sensitivity of the device characteristics using cavity length analysis [3], [4]. A recent experiment [5] has identified carrier leakage out of the QD as an underlying cause for the observed low modal gain and the relatively high temperature sensitivity of self-assembled QD lasers operating near 1 m. Studies on longer wavelength QD lasers (near 1.3 m) indicate Auger recombination also plays a role in the device temperature sensitivity [6]. Carriers which are thermally excited into the wetting layers surrounding the QD, lead to gain saturation at values significantly lower than achievable if saturation occurs due to full population inversion in the dot states.…”

Section: Introductionmentioning

confidence: 99%

Temperature sensitivity of InGaAs quantum-dot lasers grown by MOCVD

Kim

Park

Mawst

et al. 2006

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

Abstract-Temperature-dependent cavity length studies have been performed on multiple stack strain compensated InGaAs quantum-dot (QD) active region broad stripe laser structures grown by metal-organic chemical vapor deposition. The characteristic temperature coefficients of the threshold current density ( 0 ) and external differential quantum efficiency ( 1 ) were calculated from variable temperature measurements. The correlation of the 0 1 values and the extracted values of the characteristic temperature coefficients of the transparency current density, material gain, injection efficiency, and internal loss) from the temperature-dependent study is discussed. The 1 values are higher than 400 K for five-stack QD laser structures, comparable values to conventional quantum-well (QW) laser structures. 0 values are lower than 100 K. Extracted material gain parameters are found to increase with increasing temperature for the three-stack QD structure, and are nearly temperature independent for the five-stack structure, different to that observed in InGaAs QW lasers.Index Terms-Characteristic temperature coefficient, epitaxial growth, material gain, quantum dots (QDs), semiconductor lasers.

show abstract

Section: Introductionmentioning

confidence: 99%

Temperature sensitivity of InGaAs quantum-dot lasers grown by MOCVD

Kim

Park

Mawst

et al. 2006

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

show abstract

“…Previous calculations have shown that the rate of Auger recombination decreases with pressure in quantum dots due to the decreased overlap of the electron and hole wavefunctions involved in the Auger process with increasing band gap. 16 The measured decrease in threshold current with pressure ͑band gap͒ is therefore consistent with nonradiative Auger recombination dominating the threshold current at room temperature.…”

mentioning

confidence: 57%

“…Since the carrier recombination processes have different band gap dependencies, this allows one to separate which process dominates at threshold. 16 In the devices studied here, the lasing energy increases by ϳ8.4 meV/ kbars ͑inset of Fig. 2͒.…”

mentioning

confidence: 82%

Temperature and pressure dependence of the recombination processes in 1.5μm InAs∕InP (311)B quantum dot lasers

Massé

Homeyer

Marko

et al. 2007

Applied Physics Letters

View full text Add to dashboard Cite

The threshold current and its radiative component in 1.5 m InAs/ InP ͑311͒B quantum dot lasers are measured as a function of the temperature. Despite an almost temperature insensitive radiative current, the threshold current increases steeply with temperature leading to a characteristic temperature T 0 Ϸ 55 K around 290 K. Direct observation of spontaneous emission from the wetting layer shows that some leakage from the dots to the wetting layer occurs in these devices. However, a decrease in the threshold current as a function of pressure is also measured suggesting that Auger recombination dominates the nonradiative current and temperature sensitivity of these devices. It has been suggested that excellent temperature stability, low threshold currents, and high modulation bandwidths can be expected from 1.3 m InAs/ GaAs quantum dot ͑QD͒ lasers, in particular, if the devices are p doped. 1 This has stimulated interest in extending the lasing wavelengths of QD lasers toward 1.55 m for long haul telecommunication applications. In order to reach longer wavelengths the dots have to be larger than that needed for 1.3 m operation. Growing 1.55 m quantum dots on GaAs is therefore difficult because of the large strain that accumulates during the Stranski-Krastanow growth. 2 A possible alternative is to grow InAs dots on InP substrates which have a much smaller lattice mismatch with InAs ͑3.2%͒ compared with GaAs ͑7%͒. Molecular beam epitaxy on ͑100͒ InP substrates has already allowed the growth of quantum dots 3 or quantum dashes, 4 which has led to the demonstration of high performance lasers. 4,5 Also, the use of the specific InP͑311͒B orientation has already allowed three-dimensional confined nanostructures with a QD density as high as 10 11 cm −2 ͑Ref. 6͒ to be demonstrated as well as a low chirp of 2.5 Gb/ s for a directly modulated single mode waveguide laser emitting at 1.6 m. 7 Recently, an InAs/ InP͑311͒B narrow ridge single mode waveguide laser emitting on the ground state at 1516 nm under continuous wave operation at room temperature was reported. 8 In this letter we report on a detailed experimental study of the recombination processes that occur in 1.5 m InAs/ InP ͑311͒B QD lasers. A set of 1.5 mm long, 100 m wide ridge lasers were used for this study. Their active region consists of five layers of dots deposited using the double-cap procedure 9 in a Ga 0.2 In 0.8 As 0.435 P 0.565 waveguide. The dot density is ϳ10 11 dots/ cm 2 , as determined from atomic force microscopy measurements. At room temperature the threshold current densities were typically ϳ500 A / cm 2 and the T 0 ͓=1 / ͑d ln I th / dT͔͒ was ϳ55 K for temperatures ranging from 0 to 50°C. In order to understand the recombination processes which take place in these devices, measurements of the threshold current ͑I th ͒ and its radiative component ͑I rad ͒ were performed as a function of pressure and temperature. The radiative current was determined by integrating unamplified spontaneous emission spectra obtained from a 100 m diameter circular wi...

show abstract

“…2, there is a clear decrease in the gradient at high current injection levels for sample C. Identical behavior was obtained using a pulsed current source, ruling out heating effects. It is possible that other nonradiative recombination processes such as Auger recombination [13], [14] might begin to become significant at these high current levels.…”

Section: Discussionmentioning

confidence: 99%

Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures

Hasbullah

Liu

et al. 2009

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

Abstract-Electroluminescence (EL) measurements have been performed on a set of In(Ga)As-GaAs quantum-dot (QD) structures with varying spacer layer growth temperature. At room temperature and low injection current, a superlinear dependence of the integrated EL intensity (IEL) on the injection current is observed. This superlinearity decreases as the spacer layer growth temperature increases and is attributed to a reduction in the amount of nonradiative recombination. Temperature-dependent IEL measurements show a reduction of the IEL with increasing temperature. Two thermally activated quenching processes, with activation energies of 157 meV and 320 meV, are deduced and these are attributed to the loss of electrons and holes from the QD ground state to the GaAs barriers. Our results demonstrate that growing the GaAs barriers at higher temperatures improves their quality, thereby increasing the radiative efficiency of the QD emission.Index Terms-Activation energy, electroluminescence (EL), quantum dot (QD), spacer growth temperature.

show abstract

The role of auger recombination in inas 1.3-μm quantum-dot lasers investigated using high hydrostatic pressure

Cited by 64 publications

References 28 publications

Temperature sensitivity of InGaAs quantum-dot lasers grown by MOCVD

Temperature sensitivity of InGaAs quantum-dot lasers grown by MOCVD

Temperature and pressure dependence of the recombination processes in 1.5μm InAs∕InP (311)B quantum dot lasers

Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures

Contact Info

Product

Resources

About