Abstract:Arsenic is one of the most frequently used elements for doping conventional silicon-based semiconductors and particularly in emerging phase-change-memory (PCM) chips, yet the detailed functional mechanism as well as its experimental demonstration is still lacking in the latter in spite of its wide application. Here, we fabricate chalcogenide-based ovonic threshold switching (OTS) selectors, which are essential units for suppressing sneak currents in 3D PCM arrays, with various As concentrations. We discovered … Show more
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