The role of Al, Ba, and Cd dopant elements in tailoring the properties of c-axis oriented ZnO thin films

Ali, Dilawar; Butt, M. Z.; Arif, Bilal; Al-Ghamdi, Ahmed A.; Yakuphanoğlu, F.

doi:10.1016/j.physb.2016.11.003

Cited by 15 publications

(3 citation statements)

References 63 publications

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“…The measured value of E abs for undoped ZnO thin films is found to be 3.27 eV, in good agreement with the values reported in literature [18,21,23,24]. In line with the improvements in crystalline quality E abs increases for dopant concentration up to 0.6%, reaches a plateau around ≈3.35 eV for In/Zn ratios between 0.6% and 5.0%, and decreases to 3.32 eV for 10% In/Zn ratio, once the In-induced lattice expansion dominates, and crystalline quality deteriorates again.…”

Section: Optical Propertiessupporting

confidence: 90%

“…However, these processes are complicated by their dependence on high vacuum systems. On the other hand, thin films prepared by chemical vapor, or solution based methods (chemical bath deposition, sol-gel spin coating, and spray pyrolysis) are mechanically simple, can be performed at atmospheric pressure, facilitate large area coverage and simple composition control and therefore facilitate low production costs [19,[22][23][24][25][26][27]. One of the major concerns with such low-cost methods is that the electrical conductivity of the produced ZnO typically suffers in comparison to best performing PVD prepared films.…”

Section: Introductionmentioning

confidence: 99%

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Nitrogen grain-boundary passivation of In-doped ZnO transparent conducting oxide

Ali

Butt

Coughlan

et al. 2018

Phys. Rev. Materials

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We have investigated the properties and conduction limitations of spray pyrolysis grown, low-cost transparent conducting oxide ZnO thin films doped with indium. We analyze the optical, electrical, and crystallographic properties as functions of In content with a specific focus on postgrowth heat treatment of these thin films at 320 • C in an inert, nitrogen atmosphere, which improves the films electrical properties considerably. The effect was found to be dominated by nitrogen-induced grain-boundary passivation, identified by a combined study using in situ resistance measurement upon annealing, x-ray photoelectron spectroscopy, photoluminescence, and x-ray diffraction studies. We also highlight the chemical mechanism of morphologic and crystallographic changes found in films with high indium content. By optimizing growth conditions according to these findings, ZnO:In with a resistivity as low as 2 × 10 −3 cm, high optical quality (T ≈ 90%), and sheet resistance of 32 / has been obtained without any need for postgrowth treatments.

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Section: Optical Propertiessupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Nitrogen grain-boundary passivation of In-doped ZnO transparent conducting oxide

Ali

Butt

Coughlan

et al. 2018

Phys. Rev. Materials

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“…The size of the crystallites was found to decrease as the concentration of W increased further. It indicates that the higher concentration of W can obstruct the movement of the grain boundary, causing to the formation of smaller particles by limiting the grain growth [26,27]. Dilawar et al reported similar results for La and Sm doped ZnO thin films [28].…”

Section: Resultsmentioning

confidence: 77%

UV photodetectors based on W-doped ZnO thin films

Jalal,

Ozel,

Atilgan

et al. 2024

Nanotechnology

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W-doped ZnO thin films deposited on Si substrates with (100) orientation by sol–gel spin coating method at temperature 500 °C. W/Zn atomic ratio varies from 0% to 4%. Then, the UV detection performance analysis of p–n heterojunction UV photodetectors based on W-doped ZnO/Si is analyzed. The current–voltage curves of W-doped ZnO/Si are investigated in dark and exhibit diode-like rectifying behavior. Among doped ZnO/Si, sample with atomic ratio of W/Zn = 2% is the best candidate to study photodetector characteristics in UV range. The resulting device exhibits a rectification ratio RR of 5587 at ±5 V, a higher responsivity of 3.84 A W−1 and a photosensitivity value of 34 at 365 nm under 0.5 mW cm−2. The experimental findings reveal that the UV detection performance of the heterojunction-based photodetectors strongly dependent on the properties of metal oxide layer. The main goal of this work is to investigate the effect of W doping on the performance of ZnO/Si based photodetectors. Based on our results, it is observed that 2 at% of W dopant is the optimum amount of doping for high performance photodetector of ZnO:W/Si heterojunction thanks to the suppressed recombination ratio and enhanced carrier separation properties in the depletion zone.

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Thickness, annealing and substrate effects on structural, morphological, optical and waveguiding properties of RF sputtered ZnO thin films

Namoune

Touam

Chelouche

2017

J Mater Sci: Mater Electron

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The role of Al, Ba, and Cd dopant elements in tailoring the properties of c-axis oriented ZnO thin films

Cited by 15 publications

References 63 publications

Nitrogen grain-boundary passivation of In-doped ZnO transparent conducting oxide

Nitrogen grain-boundary passivation of In-doped ZnO transparent conducting oxide

UV photodetectors based on W-doped ZnO thin films

Thickness, annealing and substrate effects on structural, morphological, optical and waveguiding properties of RF sputtered ZnO thin films

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